VBT1080S-M3/4W

VBT1080S-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology D2PAK (TO-263AB) • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 NC VBT1080S NC A K TYPICAL APPLICATIONS HEATSINK DESIGN SUPPORT TOOLS click logo to get started For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. Models Available MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 80 V IFSM 100 A VF at IF = 10 A 0.60 V Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configurations Single per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT1080S Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range UNIT IFSM 100 A TJ, TSTG -55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage (1) IF = 10 A IF = 5 A IF = 10 A Reverse current (2) VR = 80 V SYMBOL TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C IR TYP. MAX. UNIT 0.57 - 0.67 0.81 0.52 - 0.60 0.70 20 600 μA 10 20 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms Revision: 21-Jun-2018 Document Number: 87975 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT1080S-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT1080S UNIT RJC 2.2 °C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT1080S-M3/4W 1.36 4W 50/tube Tube TO-263AB VBT1080S-M3/8W 1.36 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Instantaneous Forward Current (A) Average Forward Current (A) 12 Resistive or Inductive Load 10 8 6 4 2 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 0 25 75 50 100 125 150 0 175 0.2 0.6 0.4 0.8 1.0 1.2 Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics 8 100 Instantaneous Reverse Current (mA) Case Temperature (°C) D = 0.8 D = 0.5 D = 0.3 7 Average Power Loss (W) TA = 150 °C 10 D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 1 D = tp/T tp 0 0 2 4 6 8 10 12 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Reverse Characteristics Revision: 21-Jun-2018 Document Number: 87975 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT1080S-M3 www.vishay.com Transient Thermal Impedance (°C/W) Junction Capacitance (pF) 10 000 Vishay General Semiconductor TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 10 Junction to Case VFT1080S V(B,I)T1080S 1 0.1 0.01 0.1 1 10 100 Reverse Voltage (V) t - Pulse Duration (s) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 21-Jun-2018 Document Number: 87975 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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