VBT3045BP-M3/8W

VBT3045BP-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5 A FEATURES TMBS® • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation K • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • TJ 200 °C max. in solar bypass application 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 PIN 1 PIN 2 K TYPICAL APPLICATIONS HEATSINK For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PRIMARY CHARACTERISTCS Package TO-263AB IF(DC) 30 A VRRM 45 V IFSM 200 A VF at IF = 30 A 0.51 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Diode variation Single die MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) SYMBOL VBT3045BP UNIT VRRM 45 V 30 A IF(DC) (1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Operating junction temperature range (AC mode) TOP - 40 to + 150 °C Junction temperature in DC forward current without reverse bias, t  1 h TJ (2) 200 °C Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.2 bypass diode thermal test Revision: 30-Apr-13 Document Number: 87965 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT3045BP-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage VF (1) IF = 5 A TA = 125 °C IF = 15 A IF = 30 A TA = 25 °C VR = 45 V Reverse current IR (2) TA = 125 °C TYP. MAX. 0.42 - 0.49 - 0.58 0.70 0.30 - UNIT V 0.40 - 0.51 0.60 - 2000 μA 19 60 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VBT3045BP UNIT RJC 1.0 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT3045BP-M3/4W PREFERRED P/N 1.37 4W 50/tube Tube TO-263AB VBT3045BP-M3/8W 1.37 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 Instantaneous Forward Current (A) 100 DC Forward Current (A) 30 25 20 15 10 DC Forward Current at Thermal Equilibrium 5 0 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0 25 50 75 100 125 150 175 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 30-Apr-13 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Document Number: 87965 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT3045BP-M3 Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) www.vishay.com TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 20 40 60 80 10 1 0.1 100 0.01 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Typical Reverse Characteristics 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) Revision: 30-Apr-13 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 87965 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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