VBT3045CBP-M3/4W

VBT3045CBP-M3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.30 V at IF = 5.0 A FEATURES TMBS ® • Trench MOS Schottky technology D2PAK (TO-263AB) • Low forward voltage drop, low power losses K • High efficiency operation • Meets MSL level 1, per LF maximum peak of 245 °C 2 • TJ 200 °C max. in solar bypass mode application 1 VBT3045CBP PIN 1 PIN 2 J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 K HEATSINK DESIGN SUPPORT TOOLS TYPICAL APPLICATIONS click logo to get started For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. Models Available MECHANICAL DATA Case: D2PAK (TO-263AB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 45 V IFSM 200 A VF at IF = 15 A 0.39 V Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Package D2PAK (TO-263AB) Circuit configuration Common cathode per Polarity: as marked Mounting Torque: 10 in-lbs maximum  MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t  1 h SYMBOL VBT3045CBP UNIT VRRM 45 V IF(AV) (1) 30 A 15 IFSM 200 A TOP, TSTG -40 to +150 °C TJ (2)  200 °C Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 02-Jul-2018 Document Number: 87962 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT3045CBP-M3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode TA = 25 °C IF = 15 A VF (1) IF = 5 A TA = 125 °C IF = 7.5 A IF = 15 A TA = 25 °C VR = 45 V Reverse current per diode TYP. MAX. 0.42 - 0.44 - 0.49 0.57 0.30 - V 0.33 - 0.39 0.48 - 2000 μA 17 50 mA IR (2) TA = 125 °C UNIT Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT3045CBP UNIT 1.6 per diode Typical thermal resistance °C/W RJC per device 0.85 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT3045CBP-M3/4W 1.38 4W 50/tube Tube TO-263AB VBT3045CBP-M3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 9 D = 0.5 8 30 Average Power Loss (W) DC Forward Rectified Current (A) 35 25 20 15 10 5 DC Forward Current at Thermal Equilibrium D = 0.8 D = 0.3 7 D = 0.2 6 5 D = 1.0 D = 0.1 4 T 3 2 1 D = tp/T tp 0 0 100 120 140 160 180 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve 0 2 4 6 8 10 12 14 16 18 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 02-Jul-2018 Document Number: 87962 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT3045CBP-M3 www.vishay.com Vishay General Semiconductor 100 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 000 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.7 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 10 100 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 40 60 80 1 0.1 0.01 0.001 20 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 02-Jul-2018 Document Number: 87962 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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