VBT3080C-M3
www.vishay.com
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
D2PAK (TO-263AB)
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1
VBT3080C
PIN 1
PIN 2
DESIGN SUPPORT TOOLS
TYPICAL APPLICATIONS
K
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
HEATSINK
click logo to get started
MECHANICAL DATA
Models
Available
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
80 V
IFSM
150 A
VF at IF = 15 A
0.65 V
TJ max.
150 °C
Package
Circuit configuration
D2PAK (TO-263AB)
Common cathode
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Operating junction and storage temperature range
SYMBOL
VBT3080C
UNIT
VRRM
80
V
30
IF(AV)
A
15
IFSM
150
A
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 7.5 A
Instantaneous forward voltage
per diode (1)
TA = 25 °C
IF = 15 A
VF
IF = 5 A
IF = 7.5 A
TA = 125 °C
IF = 15 A
Reverse current per diode (2)
VR = 80 V
TA = 25 °C
TA = 125 °C
IR
TYP.
MAX.
0.52
-
0.58
-
0.75
0.82
0.46
-
UNIT
V
0.52
-
0.65
0.70
30
700
μA
20
35
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 02-Jul-2018
Document Number: 87978
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT3080C-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VBT3080C
RJC
per device
UNIT
2.5
°C/W
2.0
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
TO-263AB
VBT3080C-M3/4W
1.39
4W
50/tube
DELIVERY MODE
Tube
TO-263AB
VBT3080C-M3/8W
1.39
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
35
Average Forward Current (A)
Resistive or Inductive Load
30
25
20
15
10
5
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0
25
75
50
100
125
150
0
175
0.2
0.6
0.4
0.8
1.0
1.2
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
D = 0.8
D = 0.5
D = 0.3
12
Instantaneous Reverse Current (mA)
14
Average Power Loss (W)
TA = 150 °C
D = 0.2
10
D = 1.0
D = 0.1
8
6
T
4
2
D = tp/T
tp
0
0
2
4
6
8
10
12
14
16
18
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 02-Jul-2018
Document Number: 87978
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT3080C-M3
www.vishay.com
Junction Capacitance (pF)
10 000
Transient Thermal Impedance (°C/W)
Vishay General Semiconductor
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
0.1
1
10
100
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 02-Jul-2018
Document Number: 87978
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
1
Document Number: 91000
