VBT30L60C
www.vishay.com
Vishay General Semiconductor
Dual TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
FEATURES
D2PAK (TO-263AB)
• Trench MOS Schottky technology
K
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per
LF maximum peak of 245 °C
2
1
PIN 2
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VBT30L60C
PIN 1
J-STD-020,
K
TYPICAL APPLICATIONS
HEATSINK
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
LINKS TO ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 15 A
VRRM
60 V
IFSM
200 A
VF at IF = 15 A
0.45 V
TJ max.
150 °C
Package
Circuit configuration
D2PAK (TO-263AB)
Common cathode
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 and M3 suffix meet JESD 201 class 2 whisker test
per
Polarity: as marked
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
Operating junction and storage temperature range
SYMBOL
VBT30L60C
UNIT
VRRM
60
V
30
IF(AV)
A
15
200
A
dV/dt
10 000
V/μs
TJ, TSTG
-40 to +150
°C
IFSM
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5.0 A
IF = 7.5 A
Instantaneous forward voltage per diode
TA = 25 °C
IF = 15 A
VF (1)
IF = 5.0 A
IF = 7.5 A
TA = 125 °C
IF = 15 A
Reverse current per diode
VR = 60 V
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MIN.
0.43
-
0.46
-
0.51
0.60
0.32
-
0.36
-
0.45
0.57
-
4.0
27
110
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
Document Number: 89329
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Apr-2020
VBT30L60C
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VBT30L60C
RθJC
per device
UNIT
1.8
°C/W
0.8
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT30L60C-E3/4W
1.39
4W
50/tube
Tube
TO-263AB
VBT30L60C-E3/8W
1.39
8W
800/reel
Tape and reel
TO-263AB
VBT30L60C-M3/I
1.39
I
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
35
30
25
20
15
10
5
0
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
25
50
75
100
125
150
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
10
D = 0.8
D = 0.3
8
7
D = 0.2
6
D = 1.0
5
D = 0.1
4
T
3
2
1
D = tp/T
tp
0
Instantaneous Reverse Current (mA)
1000
D = 0.5
9
Average Power Loss (W)
TA = 150 °C
10
100
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
0
2
4
6
8
10
12
14
16
18
20
40
60
80
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Document Number: 89329
2
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Apr-2020
VBT30L60C
www.vishay.com
Vishay General Semiconductor
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
1000
100
0.1
1
10
Junction to Case
1
0.1
0.01
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
Mounting Pad Layout
0.42 (10.66) min.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) min.
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 89329
3
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 29-Apr-2020
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Revision: 09-Jul-2021
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Document Number: 91000
