VBT4045BP-M3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
TO-263AB
• Low forward voltage drop, low power losses
• High efficiency operation
K
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
2
1
PIN 1
PIN 2
TYPICAL APPLICATIONS
K
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
HEATSINK
PRIMARY CHARACTERISTICS
Package
TO-263AB
IF(DC)
40 A
VRRM
45 V
IFSM
240 A
VF at IF = 40 A
0.51 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
200 °C
Diode variation
Single die
MECHANICAL DATA
Case: TO-263AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
and
per
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
SYMBOL
VBT4045BP
UNIT
VRRM
45
V
IF(DC) (1)
40
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
240
A
Operating junction temperature range (AC mode)
TOP
- 40 to + 150
°C
Junction temperature in DC forward current
without reverse bias, t 1 h
TJ (1)
200
°C
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test
Revision: 30-Apr-13
Document Number: 87964
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT4045BP-M3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
SYMBOL
IF = 5 A
IF = 20 A
Instantaneous forward voltage
TA = 25 °C
IF = 40 A
VF (1)
IF = 5 A
IF = 20 A
TA = 125 °C
IF = 40 A
VR = 45 A
Reverse current
TA = 25 °C
TA = 125 °C
TYP.
MAX.
0.41
-
0.50
-
0.57
0.67
0.28
-
UNIT
V
0.41
-
0.51
0.63
-
3000
μA
29
85
mA
IR (2)
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VBT4045BP
UNIT
RJC
0.8
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-263AB
VBT4045BP-M3/4W
1.37
4W
50/tube
Tube
TO-263AB
VBT4045BP-M3/8W
1.37
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 C unless otherwise noted)
Instantaneous Forward Current (A)
45
DC Forward Current (A)
40
35
30
25
20
15
10
DC Forward Current at
Thermal Equilibrium
5
0
0
25
50
75
100
125
150
175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Revision: 30-Apr-13
200
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
TA = 25 °C
1
0.1
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
Document Number: 87964
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VBT4045BP-M3
100
Vishay General Semiconductor
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
www.vishay.com
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
40
60
80
100
1
0.1
0.01
0.1
1
10
100
Percent of Rated Peak reverse Voltage (%)
t - Pulse Duration (s)
Fig. 3 - Typical Reverse Characteristics
Fig. 5 - Typical Transient Thermal Impedance
Junction Capacitance (pF)
100 000
TJ = 25 °C
f = 1.0 MHz
Vstg = 50 mVp-p
10 000
1000
100
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591 (15.00)
0.130 (3.3)
REF.
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
Revision: 30-Apr-13
0.205 (5.20)
0.195 (4.95)
0.055 (1.40)
0.047 (1.19)
0.33 (8.38) MIN.
0.047 (1.2) REF.
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Document Number: 87964
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000