VBT6045C-E3/4W

VBT6045C-E3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS ® • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation K • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 2 1 VBT6045C PIN 1 PIN 2 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. K HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 45 V IFSM 320 A VF at IF = 30 A 0.47 V TJ max. 150 °C Package TO-263AB Diode variations Common cathode Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VBT6045C UNIT VRRM 45 V 60 per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Operating junction and storage temperature range Revision: 09-Sep-13 SYMBOL IF(AV) A 30 IFSM 320 A TJ, TSTG -40 to +150 °C Document Number: 89362 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT6045C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 10 A IF = 15 A TA = 25 °C IF = 30 A Instantaneous forward voltage per diode VF (1) IF = 10 A IF = 15 A TA = 125 °C IF = 30 A VR = 45 V Reverse current per diode TA = 25 °C IR (2) TA = 125 °C TYP. MAX. 0.44 - 0.47 - 0.54 0.64 0.33 - UNIT V 0.37 - 0.47 0.56 - 3000 μA 18 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT64045C 1.5 per diode Typical thermal resistance per device UNIT °C/W RJC 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT6045C-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT6045C-E3/8W 1.38 8W 800/reel Tape and reel  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 20 50 40 30 20 10 0 100 D = 0.5 18 60 Average Power Loss (W) Average Forward Rectified Current (A) 70 D = 0.3 D = 0.8 16 14 D = 0.2 12 10 D = 1.0 D = 0.1 8 T 6 4 2 D = tp/T tp 0 110 120 130 140 150 0 5 10 15 20 25 30 35 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 09-Sep-13 Document Number: 89362 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT6045C-E3 www.vishay.com Vishay General Semiconductor 100 000 TA = 150 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C 10 000 1000 100 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.1 0.7 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 40 60 80 1 0.1 0.01 0.001 20 Junction to Case 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) Revision: 09-Sep-13 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 89362 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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