VBT6045CBP-E3/8W

VBT6045CBP-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.33 V at IF = 10 A FEATURES TMBS ® • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses • High efficiency operation K • Meets MSL level 1, per LF maximum peak of 245 °C J-STD-020, • TJ 200 °C max. in solar bypass mode application 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 1 VBT6045CBP PIN 1 PIN 2 TYPICAL APPLICATIONS K For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade 2 x 30 A VRRM 45 V IFSM 320 A VF at IF = 30 A 0.47 V TOP max. (AC mode) 150 °C Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test TJ max. (DC forward current) 200 °C Package TO-263AB Diode variation Common cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig. 1) per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range (AC mode) Junction temperature in DC forward current without reverse bias, t  1 h SYMBOL VBT6045CBP UNIT VRRM 45 V IF(AV) (1) 60 A 30 IFSM 320 A TOP, TSTG -40 to +150 °C TJ (2)  200 °C Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test Revision: 09-Sep-13 Document Number: 89374 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT6045CBP-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 10 A IF = 15 A Instantaneous forward voltage per diode TA = 25 °C IF = 30 A VF (1) IF = 10 A TA = 125 °C IF = 15 A IF = 30 A TA = 25 °C VR = 45 V Reverse current per diode IR (2) TA = 125 °C TYP. MAX. 0.44 - 0.47 - 0.54 0.64 0.33 - UNIT V 0.37 - 0.47 0.56 - 3000 μA 18 50 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VBT6045CBP UNIT 1.5 per diode Typical thermal resistance °C/W RJC per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT6045CBP-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT6045CBP-E3/8W 1.38 8W 800/reel Tape and reel 20 65 60 55 50 45 40 35 30 25 20 15 10 5 0 D = 0.5 18 Average Power Loss (W) DC Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) DC Forward Current at Thermal Equilibrium D = 0.3 D = 0.8 16 14 D = 0.2 12 10 D = 1.0 D = 0.1 8 T 6 4 D = tp/T 2 tp 0 100 120 140 160 180 200 Case Temperature (°C) Fig. 1 - Maximum Forward Current Derating Curve Revision: 09-Sep-13 0 5 10 15 20 25 30 35 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode Document Number: 89374 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBT6045CBP-E3 www.vishay.com Vishay General Semiconductor 100 000 TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TA = 100 °C TA = 125 °C 1 TA = 25 °C 0.1 0.2 0.3 0.4 0.5 0.6 10 000 1000 100 0.1 0.1 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 0.7 1 Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 100 Fig. 5 - Typical Junction Capacitance Per Diode 100 10 TA = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 10 Reverse Voltage (V) Instantaneous Forward Voltage (V) TA = 125 °C 10 TA = 100 °C 1 0.1 TA = 25 °C 0.01 0.001 20 40 60 80 Junction to Case 1 0.1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-263AB 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) Revision: 09-Sep-13 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Document Number: 89374 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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