VBUS054B-HS3-GS08

VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 6 5 4 1 2 3 19957 20397 1 Marking (example only) XX YY Dot = Pin 1 marking XX = Date code YY = Type code (see table below) 21001 Ordering Information Ordering code Taped units per reel (8 mm tape on 7" reel) Minimum order quantity VBUS054B-HS3-GS08 3000 15 000 Device name VBUS054B-HS3 Package Data Package name Marking code Weight Molding compound flammability rating Moisture sensitivity level Soldering conditions LLP75-6A U6 5.1 mg UL 94 V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Device name VBUS054B-HS3 Absolute Maximum Ratings Rating Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Test conditions Symbol Value Unit Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot IPPM 3 A Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot IPPM 10 A Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot PPP 45 W Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 µs; single shot PPP 200 W Contact discharge acc. IEC 61000-4-2; 10 pulses VESD ± 15 kV Air discharge acc. IEC 61000-4-2; 10 pulses VESD ± 15 kV Junction temperature TJ - 40 to + 125 °C TSTG - 55 to + 150 °C * Please see document “Vishay Green and Halogen-Free Definitions (5-2008)” http://www.vishay.com/doc?99902 Document Number 81586 Rev. 1.4, 07-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 1 VBUS054B-HS3 Vishay Semiconductors Electrical Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified VBUS054B-HS3 Parameter Test conditions/remarks Symbol Number of line which can be protected N lines Reverse stand-off voltage at IR = 0.1 µA Pin 1, 3, 4 or 6 to pin 2 VRWM Reverse current at VIN = VRWM = 5 V Pin 1, 3, 4 or 6 to pin 2 IR at IR = 1 mA Pin 5 to pin 2 VBR at IR = 1 mA Pin 1, 3, 4 or 6 to pin 2 VBR Reverse clamping voltage at IPP = 3 A; Pin 1, 3, 4 or 6 to pin 2; acc. IEC 61000-4-5 Forward clamping voltage Protection paths Reverse breakdown voltage Capacitance Line symmetry Supply line capacitance www.vishay.com 2 Min. Typ. Max. Unit 4 lines 5 V < 0.01 0.1 µA 6.3 7.1 8 V 6.9 7.9 8.7 V VC 15 V at IF = 3 A; Pin 2 to pin 1, 3, 4 or 6; acc. IEC 61000-4-5 VF 5 V Pin 1, 3, 4 or 6 to pin 2 VIN (at pin 1, 3, 4 or 6) = 0 V and VBUS (at pin 5) = 5 V; f = 1 MHz CD 0.8 1 pF Pin 1, 3, 4 or 6 to pin 2 VIN (at pin 1, 3, 4 or 6) = 2.5 V and VBUS (at pin 5) = 5 V; f = 1 MHz CD 0.5 0.8 pF Difference of the line capacitances dCD 0.05 pF Pin 5 to pin 2 at VR = 0 V; f = 1 MHz CZD For technical support, please contact: ESD-Protection@vishay.com 110 pF Document Number 81586 Rev. 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 8 µs to 100 % 100 % Pin 2 to Pin 5 10 I F (mA) 80 % IPPM 60 % 20 µs to 50 % 1 Pin 2 to Pin 1, 3, 4 or 6 40 % 0.1 20 % 0.01 0.001 0.5 0% 0 10 20548 20 30 40 Figure 1. 8/20 µs Peak Pulse Current Wave Form acc. IEC 61000-4-5 0.7 0.8 0.9 1.1 1.2 Figure 4. Typical Forward Current IF vs. Forward Voltage VF 9 Pin 1, 3, 4 or 6 to Pin 2 Rise time = 0.7 ns to 1 ns 8 100 % 7 80 % Pin 5 to Pin 2 VR (V) 6 60 % 53 % 5 4 40 % 3 27 % 2 20 % 1 0 0.01 0% - 10 0 10 20 30 40 50 60 70 80 90 100 Figure 2. ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω/150 pF) 1.0 1 10 100 1000 10000 I R (µA) Figure 5. Typical Reverse Voltage VR vs. Reverse Current IR 20 f = 1 MHz; V BUS (at Pin 5) = 5 V 0.9 0.1 20551 Time (ns) 20557 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 15 0.8 Pin 1, 3, 4 or 6 to Pin 2 0.7 10 Pin 1, 3, 4 or 6 to Pin 2 0.6 VC (V) C IN (pF) 1 VF (V) 120 % Discharge Current IESD 0.6 20550 Time (µs) 0.5 Pin 5 to Pin 2 5 0.4 VC Pin 2 to Pin 5 0 0.3 0.2 -5 Pin 2 to Pin 1, 3, 4 or 6 0.1 - 10 0.0 0 1 20549 2 3 4 5 V IN (V) Figure 3. Typical Input Capacitance CIN at Pin 1, 3, 4, or 6 vs. Input Voltage VIN Document Number 81586 Rev. 1.4, 07-Oct-08 0 6 1 20552 2 3 4 IPP (A) Figure 6. Typical Peak Clamping Voltage VCvs. Peak Pulse Current IPP For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 3 VBUS054B-HS3 Vishay Semiconductors 120 200 acc. IEC 61000-4-2 + 8 kV contact discharge Pin 1, 3, 4 or 6 to Pin 2 150 100 80 VC-ESD (V) VC-ESD (V) 100 60 Pin 1, 3, 4, 6 to Pin 2 40 50 acc. IEC 61000-4-2 contact discharge VC-ESD 0 - 50 - 100 20 - 150 0 - 20 - 10 0 - 200 10 20 30 40 50 60 70 80 90 20553 0 Figure 7. Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 15 20 140 Pin 1, 3, 4 or 6 to Pin 2 acc. IEC 61000-4-2 contact discharge 120 100 VC-ESD (V) - 20 VC-ESD (V) 10 VESD (kV) Figure 9. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) 20 - 40 - 60 - 80 acc. IEC 61000-4-2 - 8 kV contact discharge - 100 - 120 Pin 5 to Pin 2 80 60 40 20 VC-ESD 0 - 20 - 40 - 140 - 160 - 10 0 5 20555 t (ns) 0 Pin 2 to Pin 1, 3, 4 or 6 - 250 Pin 2 to Pin 5 - 60 - 80 0 10 20 30 40 50 60 70 80 90 20554 Figure 8. Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) 5 10 15 20 VESD (kV) 20556 t (ns) Figure 10. Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) Application Note: With the VBUS054B-HS3 a double, high speed USB-port or up to 4 other high speed signal or data lines can be protected against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The high speed data lines, D1+, D2+, D1- and D2-, are connected to pin 1, 3, 4 and 6. As long as the signal voltage on the data lines is between the ground- and the VBUS-level, the low capacitance PN-diodes offer a very high isolation to VBUS, ground and to the other data lines. But as soon as any transient signal exceeds this working range, one of the PN-diodes starts working in the forward mode and clamps the transient to ground or to the avalanche breakthrough voltage level of the Z-diode between pin 5 and pin 2. t w i n U S B P o r t VBUS D1+ D16 5 4 1 2 3 R E C E I V E R IC D2+ D2GND 20399 www.vishay.com 4 For technical support, please contact: ESD-Protection@vishay.com Document Number 81586 Rev. 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Background knowledge: A zener- or avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage transients down to low and uncritical voltage values. The breakthrough voltage can easily be adjusted by the chiptechnology to any desired value within a wide range. Up to about 6 V the "zener-effect" (tunnel-effect) is responsible for the breakthrough characteristic. Above 6 V the so-called "avalanche-effect" is responsible. This is a more abrupt breakthrough phenomenon. Because of the typical "Z-shape" of the current-voltage-curve of such diodes, these diodes are generally called "Z-diode" (= zener or avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short current in the pulse to ground without being destroyed. This requirement can be adjusted by the size of the silicon chip (crystal). The bigger the active area the higher the current that the diode can short to ground. But the active area is also responsible for the diode capacitance - the bigger the area the higher the capacitance. The dilemma is that a lot of applications require an effective protection against more then 8 kV ESD while the capacitance must be lower then 5 pF! This is well out of the normal range of a Z-diode. However, a Protection diode with a low capacitance PN-diode (switching diode or junction diode) in series with a Z-diode, can fulfil both requirements simultaneously: low capacitance AND high ESD- and/or surge immunity become possible! A small signal (Vpp < 100 mV) just sees the low capacitance of the PN-diode, while the big capacitance of the Z-diode in series remains "invisible". D ZD C D = 0.4 pF C TOT CZ D = 110 pF 20400 I/O Such a constellation with a Z-diode and a small PN-diode (with low capacitance) in series (anti-serial) is a real unidirectional protection device. The clamping current can only flow in one direction (forward) in the PN-diode. The reverse path is blocked. D ZD Gnd 20401 Another PN-diode "opens" the back path so that the protection device becomes bidirectional! Because the clamping voltage levels in forward and reverse directions are different, such a protection device has a Bidirectional and Asymmetrical clamping behaviour (BiAs) just like a single Z-diode. Document Number 81586 Rev. 1.4, 07-Oct-08 I/O D1 D2 ZD Gnd For technical support, please contact: ESD-Protection@vishay.com 20404 www.vishay.com 5 VBUS054B-HS3 Vishay Semiconductors One mode of use is,… in the very first moment before any pulses have arrived, all three diodes are completely discharged (so the diode capacitances are empty of charge) the first signal pulse with an amplitude > 0.5 V will drive the upper PN-diode (D1) in a forward direction and "sees" the empty capacitance of the Z-diode (ZD). Depending on the duration of this pulse and the pause to the next one the Z-diodes capacitance can be charged up so that the next pulse "sees" a lower capacitance. After some pulses the big Z-diode could be completely charged up so that the following pulses just see the small capacitance of both PN-diodes. For some application this can work perfectly..... For others applications the capacitance must be the same all the time from the first till the last pulse. For these applications the appropriate mode of use is to connect the Z-diode to the supply voltage. In this mode the Z-diode is charged up immediately by the supply voltage and both PN-diodes are always used in reverse. This keeps their capacitance at a minimum. www.vishay.com 6 D1 ZD I/O D2 Gnd 20405 VBUS D1 ZD I/O D2 Gnd For technical support, please contact: ESD-Protection@vishay.com 20406 Document Number 81586 Rev. 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Package Dimensions in millimeters (inches): LLP75-6A 18058 Document Number 81586 Rev. 1.4, 07-Oct-08 For technical support, please contact: ESD-Protection@vishay.com www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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