VBUS054B-HSF-GS08

VBUS054B-HSF www.vishay.com Vishay Semiconductors 4-Line BUS-Port ESD Protection FEATURES 6 5 • Ultra compact LLP75-6L package 4 • Low package height < 0.6 mm • 4-line USB ESD protection • Low leakage current 1 20397 2 • Low load capacitance CD = 0.8 pF 3 20453 • ESD immunity acc. IEC 61000-4-2 ± 15 kV contact discharge ± 15 kV air discharge 1 • e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn) MARKING (example only) XX YY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 21001         Dot = pin 1 marking XX = date code YY = type code (see table below) DESIGN SUPPORT TOOLS click logo to get started Models Available ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL (8 mm TAPE ON 7" REEL) MINIMUM ORDER QUANTITY VBUS054B-HSF VBUS054B-HSF-GS08 3000 15 000 PACKAGE DATA DEVICE NAME PACKAGE NAME VBUS054B-HSF LLP75-6L TYPE MOLDING COMPOUND WEIGHT FLAMMABILITY RATING CODE U3 4.2 mg UL 94 V-0 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS MSL level 1 (according J-STD-020) Peak temperature max. 260 °C ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.9, 04-Jan-2019 TEST CONDITIONS SYMBOL VALUE UNIT Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM 3 A Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 μs; single shot IPPM 10 A Pin 1, 3, 4 or 6 to pin 2 acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP 45 W Pin 5 to pin 2 acc. IEC 61000-4-5; tP = 8/20 μs; single shot PPP 200 W Contact discharge acc. IEC61000-4-2; 10 pulses VESD ± 15 kV Air discharge acc. IEC61000-4-2; 10 pulses VESD ± 15 kV Junction temperature TJ -40 to +125 °C TSTG -55 to +150 °C Document Number: 81624 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VBUS054B-HSF PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of line which can be protected Nchannel - - 4 lines Reverse stand-off voltage at IR = 0.1 μA, pin 1, 3, 4 or 6 to pin 2 VRWM - - 5 V Reverse current at VIN = VRWM = 5 V, pin 1, 3, 4 or 6 to pin 2 IR - < 0.01 0.1 μA at IR = 1 mA, pin 5 to pin 2 VBR 6.3 7.1 8 V at IR = 1 mA, pin 1, 3, 4 or 6 to pin 2 VBR 6.9 7.9 8.7 V Reverse clamping voltage at IPP = 3 A; pin 1, 3, 4 or 6 to pin 2; acc. IEC 61000-4-5 VC - - 15 V Forward clamping voltage at IF = 3 A; pin 2 to pin 1, 3, 4 or 6; acc. IEC 61000-4-5 VF - - 5 V Pin 1, 3, 4 or 6 to pin 2 VIN (at pin 1, 3, 4 or 6) = 0 V and VBUS (at pin 5) = 5 V; f = 1 MHz CD - 0.8 1 pF Pin 1, 3, 4 or 6 to pin 2 VIN (at pin 1, 3, 4 or 6) = 2.5 V and VBUS (at pin 5) = 5 V; f = 1 MHz CD - 0.5 0.8 pF Line symmetry Difference of the line capacitances dCD - - 0.05 pF Supply line capacitance Pin 5 to pin 2; at VR = 0; f = 1 MHz CZD - 110 - pF Protection paths Reverse breakdown voltage Capacitance Note • Ratings at 25 °C, ambient temperature unless otherwise specified TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 120 % Rise time = 0.7 ns to 1 ns 8 µs to 100 % 100 % 80 % 80 % 60 % 60 % IPPM Discharge Current IESD 100 % 53 % 40 % 27 % 20 % 20 % 0% -10 0 10 20 30 40 50 60 70 80 90 100 Time (ns) 20557 Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 /150 pF) Rev. 1.9, 04-Jan-2019 20 µs to 50 % 40 % 0% 0 20548 10 20 30 40 Time (µs) Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Document Number: 81624 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com Vishay Semiconductors 20 1.0 15 0.8 Pin 1, 3, 4 or 6 to Pin 2 0.7 10 VC (V) Pin 1, 3, 4 or 6 to Pin 2 0.6 C IN (pF) Measured acc. IEC 61000-4-5 (8/20 µs - wave form) f = 1 MHz; V BUS (at Pin 5) = 5 V 0.9 0.5 Pin 5 to Pin 2 5 0.4 VC Pin 2 to Pin 5 0 0.3 0.2 -5 Pin 2 to Pin 1, 3, 4 or 6 0.1 - 10 0.0 0 1 2 3 20549 4 5 0 6 V IN (V) Fig. 3 - Typical Input Capacitance CIN at Pin 1, 3, 4, or 6 vs. Input Voltage VIN 2 3 4 Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 120 100 Pin 2 to Pin 5 100 VC-ESD (V) 10 I F (mA) 1 IPP (A) 20552 1 Pin 2 to Pin 1, 3, 4 or 6 0.1 acc. IEC 61000-4-2 + 8 kV contact discharge 80 60 Pin 1, 3, 4, 6 to Pin 2 40 20 0.01 0.001 0.5 0 0.6 0.7 20550 0.8 0.9 1 1.1 - 20 - 10 0 1.2 20553 VF (V) Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF 20 Pin 1, 3, 4 or 6 to Pin 2 8 0 VC-ESD (V) 5 4 - 40 - 60 - 80 3 - 100 2 - 120 1 - 140 0 0.01 20551 0.1 1 10 100 1000 10000 I R (µA) Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR Rev. 1.9, 04-Jan-2019 Pin 1, 3, 4 or 6 to Pin 2 - 20 Pin 5 to Pin 2 6 VR (V) t (ns) Fig. 7 - Typical Clamping Performance at + 8 kV Contact Discharge (acc. IEC 61000-4-2) 9 7 10 20 30 40 50 60 70 80 90 - 160 - 10 0 20554 acc. IEC 61000-4-2 - 8 kV contact discharge 10 20 30 40 50 60 70 80 90 t (ns) Fig. 8 - Typical Clamping Performance at - 8 kV Contact Discharge (acc. IEC 61000-4-2) Document Number: 81624 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com Vishay Semiconductors 140 200 150 100 VC-ESD (V) 100 VC-ESD (V) acc. IEC 61000-4-2 contact discharge 120 Pin 1, 3, 4 or 6 to Pin 2 50 acc. IEC 61000-4-2 contact discharge VC-ESD 0 - 50 Pin 5 to Pin 2 80 60 40 20 VC-ESD 0 - 100 - 20 - 150 - 40 - 200 Pin 2 to Pin 5 - 60 Pin 2 to Pin 1, 3, 4 or 6 - 80 - 250 0 5 20555 10 15 0 20 VESD (kV) 20556 Fig. 9 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) 5 10 15 20 VESD (kV) Fig. 10 - Typical Peak Clamping Voltage at ESD Contact Discharge (acc. IEC 61000-4-2) APPLICATION NOTE With the VBUS054B-HSF a double, high speed USB-port or up to 4 other high speed signal or data lines can be protected against transient voltage signals. Negative transients will be clamped close below the ground level while positive transients will be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The high speed data lines, D1+, D2+, D1- and D2-, are connected to pin 1, 3, 4 and 6. As long as the signal voltage on the data lines is between the ground- and the VBUS-level, the low capacitance PN-diodes offer a very high isolation to VBUS, ground and to the other data lines. But as soon as any transient signal exceeds this working range, one of the PN-diodes starts working in the forward mode and clamps the transient to ground or to the avalanche breakthrough voltage level of the Z-diode between pin 5 and pin 2. t w VBUS i D1+ n D1U S B P o D2+ r D2t G ND 6 5 4 1 2 3 R E C E I V E R IC 20399 Rev. 1.9, 04-Jan-2019 Document Number: 81624 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com Vishay Semiconductors BACKGROUND KNOWLEDGE: A Zener- or avalanche diode is an ideal device for “cutting” or “clamping” voltage spikes or voltage transients down to low and uncritical voltage values. The breakthrough voltage can easily be adjusted by the chip-technology to any desired value within a wide range. Up to about 6 V the “Zener-effect” (tunnel-effect) is responsible for the breakthrough characteristic. Above 6 V the so-called “avalanche-effect” is responsible. This is a more abrupt breakthrough phenomenon. Because of the typical “Z-shape” of the current-voltage-curve of such diodes, these diodes are generally called “Z-diode” (= Zener or avalanche diodes). An equally important parameter for a protection diode is the ESD and surge-power that allows the diode to short current in the pulse to ground without being destroyed. This requirement can be adjusted by the size of the silicon chip (crystal). The bigger the active area the higher the current that the diode can short to ground. But the active area is also responsible for the diode capacitance - the bigger the area the higher the capacitance. The dilemma is that a lot of applications require an effective protection against more then 8 kV ESD while the capacitance must be lower then 5 pF! This is well out of the normal range of a Z-diode. However, a protection diode with a low capacitance PN-diode (switching diode or junction diode) in series with a Z-diode, can fulfil both requirements simultaneously: low capacitance AND high ESD and / or surge immunity become possible! A small signal (Vpp < 100 mV) just sees the low capacitance of the PN-diode, while the big capacitance of the Z-diode in series remains “invisible”. CD = 0.4 pF D CTOT ZD CZD = 110 pF 20400    Such a constellation with a Z-diode and a small PN-diode (with low capacitance) in series (anti-serial) is a real unidirectional protection device. The clamping current can only flow in one direction (forward) in the PN-diode. The reverse path is blocked. I/O D ZD Gnd 20401    Another PN-diode “opens” the back path so that the protection device becomes bidirectional! Because the clamping voltage levels in forward and reverse directions are different, such a protection device has a Bidirectional and Asymmetrical clamping behavior (BiAs) just like a single Z-diode. I/O D1 ZD Gnd D2 20404        Rev. 1.9, 04-Jan-2019 Document Number: 81624 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com  One mode of use is,… in the very first moment before any pulses have arrived, all three diodes are completely discharged (so the diode capacitances are empty of charge) the first signal pulse with an amplitude > 0.5 V will drive the upper PN-diode (D1) in a forward direction and “sees” the empty capacitance of the Z-diode (ZD). Depending on the duration of this pulse and the pause to the next one the Z-diodes capacitance can be charged up so that the next pulse “sees” a lower capacitance. After some pulses the big Z-diode could be completely charged up so that the following pulses just see the small capacitance of both PN-diodes. For some application this can work perfectly.....   For others applications the capacitance must be the same all the time from the first till the last pulse.  For these applications the appropriate mode of use is to connect the Z-diode to the supply voltage. In this mode the Z-diode is charged up immediately by the supply voltage and both PN-diodes are always used in reverse. This keeps their capacitance at a minimum. Rev. 1.9, 04-Jan-2019 Vishay Semiconductors   D1 ZD I/O D2 Gnd 20405 VBUS D1 ZD I/O D2 Gnd 20406 Document Number: 81624 6 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com Vishay Semiconductors 0.45 (0.018) 0.55 (0.022) 0.2 (0.008) 0.3 (0.012) 0.2 (0.008) 0.3 (0.012) 1 (0.039) 0.2 (0.008) 0.3 (0.012) Heat sink 0.95 (0.037) 1.05 (0.041) PACKAGE DIMENSIONS in millimeters (inches): LLP75-6L 0.5 (0.020) 0.6 (0.024) 0.54 (0.021) 0.60 (0.023) 0.05 (0.002) 0 (0.000) 0.15 (0.006) 0.25 (0.010) 1.65 (0.065) 1.55 (0.061) 1.55 (0.061) 1.65 (0.065) Pin 1 marking Foot print recommendation: 0.5 (0.020) 0.5 (0.020) 0.3 (0.012) 0.3 (0.012) Document no.:S8-V-3906.02-010 (4) Created - Date: 04. MAY 2005 Rev. 4 - Date: 21. March 2006 0.15 (0.006) 1 (0.039) 0.5 (0.020) 1 (0.039) 0.25 (0.010) 0.15 (0.006) Solder resist mask Solder pad 0.5 (0.020) 20454 Rev. 1.9, 04-Jan-2019 Document Number: 81624 7 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VBUS054B-HSF www.vishay.com Vishay Semiconductors LLP75-6x S9 F5 Pad layout - view from top / seen at bottom side S8-V-3906.02-004 (4) 10.01.2005 Rev. 1.9, 04-Jan-2019 Pin 1 - location Document Number: 81624 8 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000