VCNT2025X01

VCNT2025X01 www.vishay.com Vishay Semiconductors Reflective Optical Sensor With Transistor Output FEATURES • Package type: SMD • Detector type: phototransistor • Dimensions (L x W x H in mm): 2.5 x 2 x 0.6 • Emitter wavelength: 940 nm • Moisture sensitivity level (MSL): 3 • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D Design Tools Related Documents 3D Models Application Notes APPLICATIONS • Position sensor DESCRIPTION • Optical switch The VCNT2025X01 is a reflective sensor in a miniature SMD package. It has a compact construction where the emitting light source and the detector are arranged in the same plane. The operating infrared wavelength is 940 nm. The detector consists of a silicon phototransistor. The sensor analog output signal (photo current) is triggered by detection of reflected infrared light from a close by object. • Optical encoder • Object detection (e.g. paper presence in printer and copy machines) The sensor has a built in daylight blocking filter, which greatly suppresses disturbing ambient light and therefore increases signal to noise ratio. PRODUCT SUMMARY TARGET MATERIAL DISTANCE RANGE WITH IFmax. AND IC > 0.5 mA (mm) TYPICAL CTR (1) (%) Kodak Gray Card, gray side (18 %) 0 to 4 4.5 Kodak Gray Card, white side (90 %) 0 to 15 39 PART NUMBER VCNT2025X01 DISTANCE OF PEAK SENSITIVIY (mm) DAYLIGHT BLOCKING FILTER INTEGRATED 0.7 Yes Note (1) CTR: current transfer ratio, I /I out in ORDERING INFORMATION ORDERING CODE PACKAGING VOLUME (1) REMARKS VCNT2025X01 Tape and reel MOQ: 3000 pcs Drypack, MSL 3 Note (1) MOQ: minimum order quantity Document Number: 84895 1 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT (EMITTER) Reverse voltage VR 5 V Forward current IF 65 mA IFSM 200 mA TJ 120 °C RthJA 380 K/W V(BR)CEO 20 V VECO 7 V IC 50 mA tp ≤ 100 μs Forward surge current Junction temperature Thermal resistance junction to ambient JESD 51 OUTPUT (DETECTOR) Collector emitter breakdown voltage Emitter collector voltage Collector current SENSOR Tamb ≤ 25 °C Total power dissipation Ptot 107 mW Ambient temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C Tsd 260 °C Soldering temperature In accordance with Fig. 16 ABSOLUTE MAXIMUM RATINGS Axis Title 10000 80 10000 100 40 40 30 100 20 RthJA = 380 K/W 10 20 1000 50 10 RthJA = 380 K/W 0 60 1st line 2nd line 1000 2nd line IF - Forward Current (mA) 70 1st line 2nd line 2nd line PV - Power Dissipation (mW) Axis Title 130 120 110 100 90 80 70 60 50 40 30 20 10 0 60 80 100 120 10 0 0 20 40 60 80 100 120 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation vs. Ambient Temperature Fig. 2 - Forward Current vs. Ambient Temperature Document Number: 84895 2 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.0 1.25 1.4 - 1.47 - UNIT INPUT (EMITTER) IF = 20 mA Forward voltage VF IF = 65 mA V Temperature coefficient of VF IF = 20 mA TKVF - -1.0 - mV/K Peak wavelength IF = 65 mA λP - 940 - nm Reverse current VR = 5 V IR - - 10 μA Collector emitter breakdown voltage IC = 0.1 mA, E = 0 V(BR)CEO 20 - - V Emitter collector voltage IE = 100 μA, E = 0 VECO 7 - - V VCE = 5 V, E = 0 ICEO - 1 100 nA VCE = 5 V, IF = 20 mA, d = 1 mm (flat mirror) IC 3.5 6.6 10.5 mA VCE = 5 V, IF = 20 mA, d = 1 mm (Kodak gray card, 18 %) IC - 0.9 - mA IC/IF, VCE = 5 V, d = 1 mm (Kodak gray card, 18 %) CTR - 4.6 - % Rise time IC = 0.8 mA, VCE = 5 V, RL = 100 Ω tr - 10 - μs Fall time IC = 0.8 mA, VCE = 5 V, RL = 100 Ω tf - 15 - μs OUTPUT (DETECTOR) Collector emitter dark current SENSOR Collector current Current transfer ratio d = working distance 1 mm Object: flat mirror Fig. 3 - Test Setup Document Number: 84895 3 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 10 100 1.0 1.1 1.2 1.3 1.4 1.5 10000 10 1000 100 1 d = 1 mm, VCE = 5 V, flat mirror 10 0.1 10 1 100 1st line 2nd line 1000 2nd line IC - Collector Current (mA) 10000 1st line 2nd line 1.6 1 10 VF - Forward Voltage (V) IF - Forward Current (mA) Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Collector Current vs. Forward Current Axis Title Axis Title 10000 IF = 50 mA 1000 1st line 2nd line IF = 20 mA 1.2 100 IF = 10 mA 1.1 tp = 20 ms 10 1.0 -40 -20 0 20 40 60 80 1.0 1000 0.8 1st line 2nd line 1.4 1.3 10000 1.2 2nd line IC, rel - Relative Collector Current ΔIC (%) 1.5 2nd line VF - Forward Voltage (V) 100 0.6 100 0.4 VCE = 5 V, IF = 20 mA, d = 1 mm, flat mirror 0.2 10 0 -50 100 -25 0 25 50 100 125 Tamb - Ambient Temperature (°C) Tamb - Ambient Temperature (°C) Fig. 5 - Forward Voltage vs. Ambient Temperature Fig. 8 - Relative Collector Current vs. Ambient Temperature Axis Title Axis0° Title 10° 10 10000 1000 1st line 2nd line 0.01 100 0.001 10 0.0001 -40 -20 0 20 40 60 80 100 120 2nd line Ie, rel. - Relative Radiant Intensity 1 0.1 20° 10000 30° VCE = 5 V 2nd line ICEO - Collector Current (μA) 75 1000 40° 1.0 0.9 50° 0.8 100 60° 0.7 x - direcon 70° φ - Angular Displacement 2nd line 2nd line IF - Forward Current (mA) 100 80° y - direcon 0.6 0.4 10 0.2 0 Tamb - Ambient Temperature (°C) 1st line Fig. 6 - Collector Dark Current vs. Ambient Temperature Fig. 9 - Relative Radiant Intensity vs. Angular Displacement Document Number: 84895 4 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors Axis0° Title 10° Axis Title 20° 80 10000 30° 10000 RL = 100 Ω, VCE = 5 V, d = 1 mm, flat mirror 0.9 50° 0.8 100 60° 70° 0.7 0.2 40 tf 30 100 tr 20 0 0 500 1000 IC - Collector Current (μA) Fig. 10 - Relative Sensitivity vs. Angular Displacement Fig. 13 - Rise / Fall Time vs. Collector Current Axis Title Axis Title 1.0 10000 10000 VCE = 5 V, flat mirror 0.9 0.7 1000 0.6 0.5 0.4 100 0.3 0.2 0.1 0 400 500 600 700 800 900 0.8 0.7 1000 0.6 1st line 2nd line 0.8 2nd line IC, rel - Relative Collector Current 0.9 1st line 2nd line 2nd line s(λ)Φ, rel. - Relative Spectral Sensitivity 1500 1st line 1.0 0.5 0.4 100 0.3 0.2 0.1 10 0 10 1000 1100 0 1 2 3 4 5 6 7 λ - Wavelength (nm) S - Vertical Displacement (mm) Fig. 11 - Relative Spectral Sensitivity vs. Wavelength Fig. 14 - Relative Collector Current vs. Distance Axis Title Axis Title 1.0 10000 2.0 10000 IF = 40 mA, VCE = 5 V, flat mirror x - direction 1000 0.6 0.4 y 100 0.2 10 0 0 0.5 1.0 1.5 2.0 2.5 1.4 1000 1.2 1.0 0.8 100 0.6 0.4 0.2 x 0 1.6 1st line 2nd line y - direction 0.8 2nd line IC - Collector Current (mA) 1.8 1st line 2nd line 2nd line IC, rel. - Relative Collector Current 10 2000 0 10 0.4 1000 50 10 80° 0.6 60 1st line 2nd line 1.0 2nd line tr / tf - Rise / Fall Time (μs) 1000 40° φ - Angular Displacement 2nd line 2nd line Ie, rel. - Relative Sensitivity 70 3.0 10 0 0 1 2 3 4 5 6 7 8 9 10 S - Horizontal Displacement (mm) d - Distance (mm) Fig. 12 - Relative Collector Current vs. Displacement Fig. 15 - Collector Current vs. Distance, for IC ≤ 2 mA Document Number: 84895 5 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors FLOOR LIFE REFLOW SOLDER PROFILE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Axis Title Max. 260 °C 255 °C 240 °C 217 °C 250 Conditions: Tamb < 30 °C, RH < 60 % DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: °C), RH < 5 2nd line Temperature (°C) Floor life: 168 h 1000 200 Max. 30 s 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 10 0 0 19841 100 Max. ramp up 3 °C/s 50 % 245 °C 1st line 2nd line Moisture sensitivity: level 3 192 h at 40 °C (+ 5 or 96 h at 60 °C (+ 5 °C), RH < 5 % 10000 300 50 100 150 200 250 300 Time (s) Fig. 16 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020 Document Number: 84895 6 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Recommended Footprint 1 3 0.65 4 2 0.2 Optical axis 0.9 1.1 0.685 1.425 2 0.675 3 0.2 1 2 1.85 0.9 4 0.3 0.9 0.1 0.6 0.2 2.5 0.8 0.8 4 1 3 0.7 0.475 0.3 0.4 1.225 2 0.9 Cathode Collector 0.4 Emitter Drawing- No.: 6.550-5364.01-4 Issue: 2; 11.01.2022 0.25 Anode Technical drawings according to DIN specification Not indicated tolerances ± 0.1 Document Number: 84895 7 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 VCNT2025X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS in millimeters 3000 pcs/reel Reel design is representative for different types Non tolerated dimensions ± 0.1 mm Unreel direction E (em mpt pty y le tra ade iler r 40 20 0 m 0m m m mi mi n. n.) Ø1 8.4 78 Ø1 A 3 1..5 .4 14 Lable posted here A (5 : 1) B - B (2 : 1) 0.3 2 B Ø1 4 4 Ø1.55 B 1.4 3.5 Drawing No.: 9.800-5149.01-4 Issue: 1; 25.07.2019 preliminary 8 Document Number: 84895 8 For technical questions, contact: sensorstechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Rev. 1.4, 25-Oct-2023 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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