VEMD10940FX01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface mount
• Package form: Side view
• Dimensions (L x W x H in mm): 3 x 2 x 1
• AEC-Q101 qualified
• High radiant sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm IR emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 75°
• Package matched
VSMB10940X01
DESCRIPTION
VEMD10940FX01 is a high speed and high sensitive PIN
photodiode in a miniature side looking, surface mount
package (SMD) with daylight blocking filter. Filter is matched
with IR emitters operating at wavelength of 830 nm to
950 nm. The photo sensitive area of the chip is 0.23 mm2.
with
IR
emitter
• Floor life: 168 h, MSL 3, according to J-STD-020
• Lead (Pb)-free reflow soldering
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Infrared remote control
• Infrared data transmission
• Photo interrupters
• IR touch panels
• Automotive applications
PRODUCT SUMMARY
COMPONENT
VEMD10940FX01
Ira (μA)
ϕ (°)
λ0.5 (nm)
3
± 75
780 to 1050
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMD10940FX01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
Side view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction-to-ambient
Rev. 1.2, 05-Aug-2019
SYMBOL
VALUE
VR
60
UNIT
V
PV
104
mW
Tj
100
°C
Tamb
-40 to +100
°C
Tstg
-40 to +100
°C
According to reflow solder profile Fig. 8
Tsd
260
°C
According to J-STD-051
RthJA
450
K/W
Document Number: 84217
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
-
1.56
-
V
IR = 100 μA, E = 0
V(BR)
32
-
-
V
VR = 10 V, E = 0
Iro
-
1
10
nA
VR = 0 V, f = 1 MHz, E = 0
CD
-
3.3
-
pF
VR = 3 V, f = 1 MHz, E = 0
CD
-
1.5
-
pF
Ee = 1 mW/cm2, λ = 950 nm
Vo
-
350
-
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
-
-2.7
-
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
-
2.8
-
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
-
0.4
-
%/K
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
μA
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Reverse light current
Ira
2
3
4
Angle of half sensitivity
ϕ
-
± 75
-
°
Wavelength of peak sensitivity
λp
-
950
-
nm
λ0.5
-
780 to 1050
-
nm
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
-
100
-
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
-
100
-
ns
Range of spectral bandwidth
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
100
Ira - Reverse Light Current (µA)
Iro - Reverse Dark Current (nA)
1000
100
10
VR = 10 V
1
20
94 8427
40
60
1
0.1
1
10
Ee - Irradiance (mW/cm2)
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 3 - Reverse Light Current vs. Irradiance
8
1.4
CD - Diode Capacitance (pF)
Ira, rel - Relative Reverse Light Current
10
0.1
0.01
100
80
VR = 5 V,
λ = 950 nm
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
6
E=0
f = 1 MHz
4
2
0
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.2, 05-Aug-2019
0.1
94 8430
1
10
100
VR- Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Document Number: 84217
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
0°
10°
20°
30°
Ie, rel - Relative Radiant Sensitivity
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
600
700
800
900
1000
40°
1.0
70°
80°
1100
0.7 0.6
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
10°
60°
0.8
λ - Wavelength (nm)
0°
50°
0.9
ϕ - Angular Displacement
S(λ)rel - Relative Spectral Sensitivity
1.0
0.4
0.2
0
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement Vertical
20°
40°
1.0
50°
0.9
60°
0.8
70°
ϕ - Angular Displacement
Ie, rel - Relative Radiant Sensitivity
30°
80°
0.7 0.6
0.4
0.2
0
Fig. 6 - Relative Radiant Sensitivity vs. Angular DisplacementHorizontal
REFLOW SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 3, according to J-STD-020.
DRYING
Fig. 8 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D
Rev. 1.2, 05-Aug-2019
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+5 °C), RH < 5 %.
Document Number: 84217
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters: VEMD10940F
1.00
1.00
Molding
body (lens)
0.40
0.40
Polarity
+
PCB
3.00
R0.45
2.00
0.30
-
Cathode
Reinforcing pin
(non electrode)
LED dice
0.40
0.40
2.00
Recommended Solder Pad Footprint
0.90
0.20
Not indicated tolerances: ± 0.1 mm
Centering board
5.00
22701
Rev. 1.2, 05-Aug-2019
2.00
0.90
Luminous direction
1.50
Document Number: 84217
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD10940FX01
www.vishay.com
Vishay Semiconductors
1.75 ± 0.1
(0.069 ± 0.004)
TAPING AND REEL DIMENSIONS in millimeters: VEMD10940F
0.23 ± 0.1
(0.009 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
4.00 ± 0.1
(0.157 ± 0.004)
4.00 ± 0.1
(0.157 ± 0.004)
1.55 ± 0.05
(0.061 ± 0.002)
3.50 ± 0.05
(0.138 ± 0.002)
+ 0.012
-0.004 )
(0.315
8.00
+ 0.3
-0.1
Cathode
39)
.
typ
.0
0 (0
.0
Ø1
1.32 ± 0.1
(0.052 ± 0.004)
22667
User Feed Direction
Ø 60.0 ± 1.0
(2.36 ± 0.039)
Ø 178 ± 2.0
(7.00 ± 0.08)
Ø 13.0 (0.512)
typ.
22668
Rev. 1.2, 05-Aug-2019
14.40 (0.57) typ.
Document Number: 84217
5
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
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Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
1
Document Number: 91000
