VEMD5160X01

VEMD5160X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4 x 0.9 • Radiant sensitive area (in mm2): 7.5 • AEC-Q101 qualified • Daylight blocking filter matched with 850 nm to 890 nm emitters • High radiant sensitivity • Excellent Ira linearity • Fast response times DESCRIPTION VEMD5160X01 is a high speed and high sensitive PIN photodiode with a highly linear photoresponse. It is a low profile surface mount device (SMD) including the chip with a 7.5 mm2 sensitive area and a daylight blocking filter matched with IR emitters operating at wavelength 850 nm or 890 nm. • Angle of half sensitivity: ϕ = ± 65° • Floor life: 72 h, MSL 4, according to J-STD-020 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Small signal detection • Proximity sensors PRODUCT SUMMARY COMPONENT Ira (μA) ϕ (deg) λ0.1 (nm) VEMD5160X01 26 ± 65 700 to 1070 PACKAGE FORM Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS VEMD5160X01 Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5160X01-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb ≤ 25 °C Junction temperature SYMBOL VALUE VR 20 UNIT V PV 240 mW Tj 110 °C Operating temperature range Tamb -40 to +110 °C Storage temperature range Tstg -40 to +110 °C According to reflow solder profile fig. 8 Tsd 260 °C According to EIA / JESD51 RthJA 350 K/W ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM ≥2 kV Soldering temperature Thermal resistance junction / ambient ESD safety HBM Rev. 1.1, 21-Mar-16 Document Number: 84279 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5160X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 0.8 1.0 V IR = 100 μA, E = 0 V(BR) 20 - - V VR = 10 V, E = 0 Iro - 0.2 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 80 - pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD - 35 40 pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo - 350 - mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - -2.6 - mV/K Short circuit current Ee = 1 mW/cm2, λ = 950 nm Ik - 26 - μA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 835 nm TKIk - 0.1 - %/K Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 20 26 31 μA Ee = 1 mW/cm2, λ = 890 nm, VR = 5 V Ira - 38 - μA ϕ - ± 65 - deg Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 700 to 1070 - nm Reverse light current Angle of half sensitivity Rise time VR = 5 V, RL = 50 Ω, λ = 820 nm tr - 30 - ns Fall time VR = 5 V, RL = 50 Ω, λ = 820 nm tf - 30 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable. 1.4 VR = 10 V 100 10 1 0.1 0.01 0.001 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.1, 21-Mar-16 Ira rel - Relative Reverse Light Current Iro - Reverse Dark Current (nA) 1000 VR = 10 V 940 nm 1.2 865 nm 835 nm 1 0.8 0.6 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Document Number: 84279 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5160X01 www.vishay.com Vishay Semiconductors S(λ)rel - Relative Spectral Sensitivity VR = 5 V, λ = 950 nm 100 10 1 0.1 0.01 0.1 1 Ee - Irradiance 1.0 0.8 0.6 0.4 0.2 0 400 10 500 600 700 800 Fig. 3 - Reverse Light Current vs. Irradiance Fig. 6 - Relative Spectral Sensitivity vs. Wavelength Ira - Reverse Light Current (μA) λ = 950 nm 10 mW/cm2 5.0 mW/cm2 100 2.0 mW/cm2 1.0 mW/cm2 0.5 mW/cm2 10 0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2 1 0.02 mW/cm2 0.01 mW/cm2 0.1 0.1 1 10 100 Srel - Relative Radiant Sensitivity 0° 1000 900 1000 1100 λ - Wavelength (nm) (mW/cm2) 10° 20° 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 0.6 0.4 0.2 ϕ - Angular Displacement Ira - Reverse Light Current (μA) 1000 0 VR - Reverse Voltage (V) Fig. 4 - Reverse Light Current vs. Reverse Voltage Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement 90 f = 1 MHz, E = 0 Cp - Capacitance (pF) 80 70 60 50 40 30 20 10 0 0.001 0.01 0.1 1 10 100 VR - Reverse Voltage (V) Fig. 5 - Diode Capacitance vs. Reverse Voltage Rev. 1.1, 21-Mar-16 Document Number: 84279 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5160X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters 4 Bottom view 2.1 1.8 3 5 1.8 0.2 0.1 3 0.9 ± 0.15 Optical center Optical window Top view C (20 : 1) C Tie bar, electrically connected to cathode 2 Recommended footprint 0.65 1.2 4.1 1 0.6 Cathode 0.9 1.2 0.8 1 5.2 2.5 Exposed pad (cathode) 3.1 NC 1 0.8 0.4 (4 x) Center of device 0.8 2 Anode 0.6 (4 x) Drawing- No.: 6.550-5329.01-4 Issue: 2; 03.03.2016 Rev. 1.1, 21-Mar-16 Not indicated tolerances ± 0.1 Technical drawings according to DIN specification Document Number: 84279 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5160X01 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS in millimeters Reel-design is reperesentative for different types Unreel direction X Label posted here Ø 1.55 B-B ( 2 : 1 ) 0.3 B Ø 1.5 8 2 X Anode 1.75 B Drawing-No.: 9.800-5129.01-4; Issue: 1; 20.07.2015 Rev. 1.1, 21-Mar-16 1.42 5.5 Document Number: 84279 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5160X01 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK 300 Temperature (°C) max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 200 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: max. 30 s 150 Moisture sensitivity: level 4 max. 100 s max. 120 s Floor life: 72 h 100 max. ramp down 6 °C/s 50 max. ramp up 3 °C/s DRYING 0 0 19841 50 100 150 200 250 Time (s) Fig. 8 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020D Rev. 1.1, 21-Mar-16 Conditions: Tamb < 30 °C, RH < 60 % 300 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 %. Document Number: 84279 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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