VEMD6110X01
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface-mount
• Package form: 1206
• Dimensions (L x W x H in mm): 4 x 2 x 1.05
• Radiant sensitive area (in mm2): 0.85
• High photo sensitivity
• High sensitivity
• Daylight blocking filter matched with 830 nm
to 950 nm emitters
• Fast response times
• Angle of half sensitivity: ϕ = ± 60°
• Floor life: 72 h, MSL 4, according to J-STD-020
DESCRIPTION
• Lead (Pb)-free reflow soldering
VEMD6110X01 is a high speed and high sensitive PIN
photodiode. It is a small surface mount device (SMD)
including the chip with a 0.85 mm2 sensitive area and a
daylight blocking filter matched with IR emitters operating at
wavelength of 830 nm to 950 nm.
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
PRODUCT SUMMARY
COMPONENT
Ira (μA)
ϕ (°)
λ0.5 (nm)
VEMD6110X01
9.5
± 60
750 to 1050
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMD6110X01
Tape and reel
MOQ: 3000 pcs, 3000 pcs/reel
1206
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Power dissipation
Tamb ≤ 25 °C
Junction temperature
SYMBOL
VALUE
VR
32
UNIT
V
PV
215
mW
Tj
110
°C
Ambient temperature range
Tamb
-40 to +110
°C
Storage temperature range
Tstg
-40 to +110
°C
According to reflow solder profile Fig. 8
Tsd
260
°C
According to J-STD-051
RthJA
270
K/W
Soldering temperature
Thermal resistance junction to ambient
Rev. 1.2, 23-Mar-2022
Document Number: 84179
1
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD6110X01
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
-
1
-
V
IR = 100 μA, E = 0
V(BR)
32
-
-
V
VR = 10 V, E = 0
Iro
-
1
3
nA
VR = 0 V, f = 1 MHz, E = 0
CD
-
12
-
pF
VR = 5 V, f = 1 MHz, E = 0
CD
-
3.6
-
pF
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
-
356
-
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
-
-3.1
-
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
-
9
-
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
-
0.1
-
%/K
Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V
μA
Reverse light current
Ira
6.7
9.5
12.4
Angle of half sensitivity
ϕ
-
± 60
-
°
Wavelength of peak sensitivity
λp
-
950
-
nm
λ0.5
750
-
1050
nm
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tr
-
100
-
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
tf
-
100
-
ns
Range of spectral bandwidth
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Axis Title
10
VR = 10 V
1
20
94 8427
40
60
100
80
Tamb - Ambient Temperature (°C)
100
10000
10
1000
1
100
1st line
2nd line
100
2nd line
Ira - Reverse Light Current (μA)
Iro - Reverse Dark Current (nA)
1000
VR = 5 V,
λ = 950 nm
10
0.1
0.01
0.1
1
10
Ee - Irradiance (mW/cm2)
Fig. 3 - Reverse Light Current vs. Irradiance
100
1.4
Ira - Reverse Light Current (µA)
Ira, rel - Relative Reverse Light Current
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
VR = 5 V
λ = 950 nm
1.2
1.0
0.8
0.6
0
94 8416
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.2, 23-Mar-2022
λ = 950 nm
Ee = 1 mW/cm2
10
1
0.1
1
10
100
VR - Reverse Voltage (V)
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Document Number: 84179
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD6110X01
www.vishay.com
Vishay Semiconductors
REFLOW SOLDER PROFILE
Axis Title
10
10000
300
E=0
f = 1 MHz
Max. 260 °C
255 °C
240 °C
217 °C
250
2nd line
Temperature (°C)
8
6
4
245 °C
1000
200
Max. 30 s
150
Max. 120 s
100
10
1
100
Max. ramp up 3 °C/s
50
100
10
0
VR - Reverse Voltage (V)
18438
Max. 100 s
Max. ramp down 6 °C/s
2
0
0.1
1st line
2nd line
CD - Diode Capacitance (pF)
12
0
100
150
200
250
300
Time (s)
19841
Fig. 5 - Diode Capacitance vs. Reverse Voltage
50
Fig. 8 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020
DRYPACK
S (λ)rel - Relative Spectral Sensitivity
1.2
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
1.0
0.8
FLOOR LIFE
0.6
Floor life (time between soldering and removing from MBB)
must not exceed the time indicated on MBB label:
0.4
Floor life: 72 h
0.2
Conditions: Tamb < 30 °C, RH < 60 %
Moisture sensitivity level 4, acc. to J-STD-020.
0
600
700
800
900
1000
1100
λ - Wavelength (nm)
21554
DRYING
In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Devices taped on reel dry using recommended conditions
192 h at 40 °C (+ 5 °C), RH < 5 %.
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
Axis0°
Title 10°
20°
1000
40°
1.0
0.9
50°
0.8
100
60°
70°
0.7
φ - Angular Displacement
2nd line
2nd line
Ie, rel. - Relative Sensitivity
10000
30°
80°
10
0.6
0.4
0.2
0
1st line
94 8013
Fig. 7 - Relative Sensitivity vs. Angular Displacement
Rev. 1.2, 23-Mar-2022
Document Number: 84179
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD6110X01
www.vishay.com
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters
2.4 ± 0.15
2 ± 0.15
0.45
1.05 ± 0.15
°
97
0.745
0.745
Anode
1
4 ± 0.15
0.97
0.19
0.81
(1)
0.81
Cathode
2 ± 0.15
Optical center
Recommended solder pad footprint
0.88
0.12
1.02
0.88
Device center
2.46
4.64
Drawing-No. 6.541-5100.01-4
Preliminary issue 04.07.2013
Rev. 1.2, 23-Mar-2022
Technical drawings
according to DIN
specification.
Not indicated tolerances ± 0.1mm
Document Number: 84179
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD6110X01
www.vishay.com
Vishay Semiconductors
BLISTER TAPE DIMENSIONS in millimeters
Rev. 1.2, 23-Mar-2022
Document Number: 84179
5
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD6110X01
www.vishay.com
Vishay Semiconductors
REEL DIMENSIONS in millimeters
20874
Rev. 1.2, 23-Mar-2022
Document Number: 84179
6
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000