VEMD8080
www.vishay.com
Vishay Semiconductors
Silicon PIN Photodiode
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 4.8 x 2.5 x 0.48
• Radiant sensitive area (in mm2): 4.5
• 0.48 mm low profile package
• Enhanced sensitivity for visible light
• Suitable for visible and near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 168 h, MSL 3, according to J-STD-020
DESCRIPTION
VEMD8080 is a high speed and high sensitive PIN
photodiode with enhanced sensitivity for visible light. It is a
low profile surface-mount device (SMD) including the chip
with a 4.5 mm2 sensitive area detecting visible and near
infrared radiation.
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• High speed photo detector
• Wearables
PRODUCT SUMMARY
COMPONENT
VEMD8080
Ira (μA)
ϕ (deg)
λ0.1 (nm)
28
± 65
350 to 1100
Note
• Test conditions see table “Basic Characteristics”
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
VEMD8080
Tape and reel
MOQ: 5000 pcs, 5000 pcs/reel
Top view
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
Reverse voltage
VR
20
V
Junction temperature
Tj
85
°C
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +85
°C
Tsd
260
°C
RthJA
350
K/W
ESDHBM
≥2
kV
Soldering temperature
TEST CONDITION
According to reflow solder profile Fig. 8
Thermal resistance junction-to-ambient
ESD safety HBM
Rev. 1.0, 24-Apr-2018
± 2000 V, 1.5 kΩ, 100 pF, 3 pulses
UNIT
Document Number: 84565
1
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VEMD8080
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Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IF = 50 mA
VF
-
1.2
1.6
V
IR = 100 μA, E = 0
V(BR)
20
-
-
V
VR = 10 V, E = 0
Iro
-
0.2
10
nA
VR = 0 V, f = 1 MHz, E = 0
CD
-
47
-
pF
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
VR = 3 V, f = 1 MHz, E = 0
CD
-
17
40
pF
Open circuit voltage
Ee = 1 mW/cm2, λ = 950 nm
Vo
-
320
-
mV
Temperature coefficient of Vo
Ee = 1 mW/cm2, λ = 950 nm
TKVo
-
-3.0
-
mV/K
Short circuit current
Ee = 1 mW/cm2, λ = 950 nm
Ik
-
32
-
μA
Temperature coefficient of Ik
Ee = 1 mW/cm2, λ = 950 nm
TKIk
-
0.1
-
%/K
Ee = 1 mW/cm2, λ = 850 nm, VR = 5 V
Ira
23
28
33
μA
Ee = 0.25 mW/cm2, λ = 525 nm, VR = 5 V
Ira
3.4
4.4
5.3
μA
ϕ
-
± 65
-
deg
Wavelength of peak sensitivity
λp
-
850
-
nm
Range of spectral bandwidth
λ0.1
-
350 to 1100
-
nm
Reverse light current
Angle of half sensitivity
Rise time
VR = 10 V, RL = 1 kΩ, λ = 830 nm
tr
-
70
-
ns
Fall time
VR = 10 V, RL = 1 kΩ, λ = 830 nm
tf
-
70
-
ns
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2
VR = 10 V
100
10
1
0.1
0
20
40
60
80
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Rev. 1.0, 24-Apr-2018
Ira rel - Relative Reverse Light Current
Iro - Reverse Dark Current (nA)
1000
Ee = 1 mW/cm2
λ = 950 nm
VR = 5 V
1.1
1
0.9
0.8
-40
-20
0
20
40
60
80
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 84565
2
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD8080
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Vishay Semiconductors
S(λ)rel - Relative Spectral Sensitivity
VR = 5 V, λ = 950 nm
10
1
0.1
0.01
0.1
Ee - Irradiance
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
400
1
500
600
700
800
Fig. 3 - Reverse Light Current vs. Irradiance
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
0°
50
10°
20°
30°
Srpel - Relative Sensitivity
f = 1 MHz, E = 0
Cp - Capacitance (pF)
900 1000 1100
λ - Wavelength (nm)
(mW/cm2)
40
30
20
10
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Ira - Reverse Light Current (μA)
100
80°
0
0.1
1
10
100
0.6
0.4
0.2
0
VR - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.0, 24-Apr-2018
Fig. 6 - Relative Sensitivity vs. Angular Displacement
Document Number: 84565
3
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD8080
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Vishay Semiconductors
0.55 (x 8)
PACKAGE DIMENSIONS in millimeters
Footprint
2.38
0.15
0.54 (x 8)
0.29
1.63
2.5
4.8
1.31
1.38
1.31
0.48 ± 0.05
0.5
0.15
2.4
Not indicated tolerances ± 0.1 mm
Pinning top view
1.31
1.38
1.31
PD pin 8
cathode
PD pin 7
cathode
PD pin 6
cathode
PD pin 5
anode
PD pin 1
cathode
PD pin 2
cathode
PD pin 3
cathode
PD pin 4
cathode
4.32
2.02
1.25
2.14
(0.14)
Pinning bottom view
Optical center PD
(0.14)
Drawing number: 6.550-5354.01-4
Issue: 1; 20.04.2018
Rev. 1.0, 24-Apr-2018
PD pin 1
cathode
PD pin 2
cathode
PD pin 3
cathode
PD pin 4
cathode
PD pin 8
cathode
PD pin 7
cathode
PD pin 6
cathode
PD pin 5
anode
Pin 1 marking
Technical drawings
according to DIN
specification.
Document Number: 84565
4
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD8080
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Vishay Semiconductors
TAPE AND REEL DIMENSIONS in millimeters
Non tolerated dimensions ± 0.1 mm
Reel design is representative for different types
Unreel direction
Re
el Ø
3
0.25
Ø1
0.9
A
Label posted here
12
Ø 1.5
.4
4
Sensor orientation mark pin 1
4
A
(5 : 1)
2
18
Ø 1.5
Drawing-No.: 9.800-5146.01-4
Issue: 1; 20.04.2018
Rev. 1.0, 24-Apr-2018
5.5
1.75
Document Number: 84565
5
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VEMD8080
www.vishay.com
Vishay Semiconductors
SOLDER PROFILE
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
Axis Title
10000
300
Max. 260 °C
255 °C
240 °C
217 °C
2nd line
Temperature (°C)
250
FLOOR LIFE
245 °C
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
1000
200
1st line
2nd line
Max. 30 s
150
Max. 120 s
100
Max. 100 s
Max. ramp down 6 °C/s
100
10
0
0
50
100
150
200
250
300
Time (s)
19841-1
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020D
Rev. 1.0, 24-Apr-2018
Floor life: 168 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
Max. ramp up 3 °C/s
50
Moisture sensitivity: level 3
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %
Document Number: 84565
6
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2019
1
Document Number: 91000