VEMD8081

VEMD8081 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: surface-mount • Package form: top view • Dimensions (L x W x H in mm): 4.8 x 2.5 x 0.48 • Radiant sensitive area (in mm2): 5.4 • 0.48 mm low profile package • Enhanced sensitivity for visible light • Suitable for visible and near infrared radiation • Angle of half sensitivity: ϕ = ± 65° • Floor life: 168 h, MSL 3, according to J-STD-020 LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models APPLICATIONS DESCRIPTION • High speed photo detector VEMD8081 is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with a 5.4 mm2 sensitive area detecting visible and near infrared radiation. • Wearables PRODUCT SUMMARY COMPONENT Ira (μA) at Ee = 1.0 mW/cm2, λ = 850 nm, VR = 5.0 V ϕ (°) λ0.1 (nm) 33 ± 65 350 to 1100 VEMD8081 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD8081 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Operating temperature range Storage temperature range Soldering temperature ESD safety HBM Rev. 1.0, 07-Oct-2020 SYMBOL VALUE UNIT VR 20 V Tamb -40 to +85 °C Tstg -40 to +85 °C According to reflow solder profile Fig. 8 Tsd 260 °C ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM ≥2 kV Document Number: 80218 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD8081 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 2.3 3.3 V Forward voltage Reverse dark current VR = 10 V, E = 0 Iro - 0.5 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 50 - pF VR = 3 V, f = 1 MHz, E = 0 CD - 20 40 pF λ = 525 nm, VR = 5 V Ira 15 20 24 μA Ee = 1 mW/cm2, λ = 850 nm, VR = 5 V Ira 29 33 38 μA Diode capacitance Ee = 1 Reverse light current mW/cm2, Angle of half sensitivity ϕ - ± 65 - ° Wavelength of peak sensitivity λp - 840 - nm Range of spectral bandwidth λ0.1 - 350 to 1100 - nm Rise time VR = 10 V, RL = 50 Ω, λ = 830 nm tr - 110 - ns Fall time VR = 10 V, RL = 50 Ω, λ = 830 nm tf - 110 - ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title Axis Title 1000 VR = 5 V, λ = 850 nm 10 100 1 0.1 10 40 60 10 1000 1 100 1st line 2nd line 1000 2nd line Ira - Reverse Light Current (μA) 100 1st line 2nd line 2nd line Iro - Reverse Dark Current (nA) VR = 10 V 20 10000 100 10000 10 0.1 0.01 80 0.1 Tamb - Ambient Temperature (°C) Ee - Irradiance (mW/cm2) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance Axis Title Axis Title 110 60 10000 Ee = 1 mW/cm2 λ = 850 nm VR = 5 V 10000 f = 1 MHz 100 100 95 40 1000 1st line 2nd line 1000 2nd line Cp - Capacitance (pF) 50 105 1st line 2nd line 2nd line Ira, rel. - Relative Reverse Light Current (%) 1 30 20 100 10 90 10 -40 -20 0 20 40 60 80 0 0.001 10 0.01 0.1 1 10 Tamb - Ambient Temperature (°C) VR - Reverse Voltage (V) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.0, 07-Oct-2020 Document Number: 80218 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD8081 www.vishay.com Vishay Semiconductors Axis Title 0° 10° 10000 20° 30° 80 70 1000 60 50 40 100 30 20 10 40° 1.0 0.9 50° 0.8 60° 70° 0.7 M - Angular Displacement Srel - Relative Sensitivity 90 1st line 2nd line 2nd line Srel. - Relative Spectral Sensitivity (%) 100 80° 0 400 500 600 700 800 900 10 1000 1100 0.6 0.4 0.2 0 λ - Wavelength (nm) Fig. 5 - Relative Spectral Sensitivity vs. Wavelength Fig. 6 - Relative Sensitivity vs. Angular Displacement 0.55 (x 8) PACKAGE DIMENSIONS in millimeters Footprint 0.54 (x 8) 2.38 0.15 1.63 Exposed pad connected to cathode 0.29 2.5 4.8 1.31 1.38 1.31 0.48 ± 0.05 0.5 Not indicated tolerances ± 0.1 mm 0.15 2.4 Pinning top view 1.31 1.38 1.31 PD pin 8 cathode PD pin 7 cathode PD pin 6 cathode PD pin 5 anode PD pin 1 cathode PD pin 2 cathode PD pin 3 cathode PD pin 4 cathode 4.32 2.02 1.25 2.15 (0.14) Pinning bottom view Optical center PD (0.14) PD pin 2 cathode PD pin 3 cathode PD pin 4 cathode PD pin 8 cathode PD pin 7 cathode PD pin 5 PD pin 6 anode cathode Exposed pad connected to cathode Pin 1 marking Technical drawings according to DIN specification. Rev. 1.0, 07-Oct-2020 PD pin 1 cathode Document Number: 80218 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD8081 www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS in millimeters Non tolerated dimensions ± 0.1 mm Reel design is representative for different types Unreel direction Re el Ø 3 0.25 Ø1 0.9 A Label posted here 12 Ø 1.5 .4 4 Sensor orientation mark pin 1 4 A (5 : 1) 2 18 Ø 1.5 Drawing-No.: 9.800-5146.01-4 Issue: 1; 20.04.2018 Rev. 1.0, 07-Oct-2020 5.5 1.75 Document Number: 80218 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD8081 www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 °C 255 °C 240 °C 217 °C 245 °C FLOOR LIFE 1000 200 Max. 30 s 1st line 2nd line 2nd line Temperature (°C) 250 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 °C/s 100 Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 3 Floor life: 168 h Conditions: Tamb < 30 °C, RH < 60 % Max. ramp up 3 °C/s 50 DRYING 10 0 0 50 100 150 200 250 300 Time (s) 19841 Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020D Rev. 1.0, 07-Oct-2020 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-033D or recommended conditions: 192 h at 40 °C (+ 5 °C), RH < 5 % or 96 h at 60 °C (+ 5 °C), RH < 5 % Document Number: 80218 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000