VESD01C1-02V-G3-08

VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Single-Line ESD-Protection Diode in SOD-523 FEATURES • Compact SOD-523 package Available • Low package height < 0.7 mm • 1-line unidirectional ESD-protection 2 1 • AEC-Q101 qualified available 20278 • Working range 1 V to 33 V 19344 • ESD immunity acc. IEC 61000-4-2 ±15 kV to ±30 kV contact discharge ±15 kV to ±30 kV air discharge MARKING (example only) XY • Lead plating: Sn (e3) - soldering can be checked by standard vision inspection - AOI = automated optical inspection 20279 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Bar = cathode marking X = date code Y = type code (see table below)       LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS 8K PER 7" REEL (8 mm TAPE) PART NUMBER (EXAMPLE) AEC-Q101 QUALIFIED VESD05C1-02V - G 3 -08 VESD05C1-02V-G3-08 VESD05C1-02V H G 3 -08 VESD05C1-02VHG3-08 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS TIN PLATED GREEN ORDERING CODE (EXAMPLE) MOQ = 8K/BOX PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE WEIGHT CODE VESD26C1-02V . . . . . . . VESD33C1-02V A 1.32 mg UL 94 V-0 MSL level 1 Peak temperature max. 260 °C (according J-STD-020) G K Rev. 1.3, 05-Aug-2020 E VESD16C1-02V SOD-523 D VESD12C1-02V B VESD08C1-02V C VESD03C1-02V VESD05C1-02V A VESD01C1-02V MOLDING COMPOUND FLAMMABILITY RATING Document Number: 86130 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VESD01C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 14.6 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 11.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS VESD03C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 8.7 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W Operating temperature Junction temperature VESD Storage temperature ABSOLUTE MAXIMUM RATINGS VESD05C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER ESD immunity Operating temperature 30 kV 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 6.60 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS VESD08C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.3, 05-Aug-2020 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C Document Number: 86130 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VESD12C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 4.4 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 3.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS VESD16C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD26C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 2.1 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 20 kV Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD 20 kV TJ -55 to +150 °C Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD33C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.3, 05-Aug-2020 TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 1.6 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 15 kV Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 15 kV TJ -55 to +150 °C Tstg -55 to +150 °C Document Number: 86130 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD01C1-02V  (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 1 V at IR = 100 μA VR 1 1.2 - V at VR = 1 V IR - 20 100 μA at IR = 1 mA VBR 1.5 - - V at IR = 20 mA VBR 2.5 2.65 2.8 V at IPP = IPPM = 14.6 A, tp = 8/20 μs VC - 6.2 6.9 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 14.6 A, tp = 8/20 μs VF - 3 3.92 V tp = 100 ns (TLP; pin 2-1) rdyn - 0.13 -  at VR = 0 V; f = 1 MHz CD 153 192 230 pF TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 3 V at IR = 20 μA VR 3 - - V μA ELECTRICAL CHARACTERISTICS VESD03C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse voltage Reverse current at VR = 3 V IR - 8 20 Reverse breakdown voltage at IR = 1 mA VBR 4.4 4.65 4.9 V at IPP = IPPM = 11.6 A, tp = 8/20 μs VC - 7.8 8.70 V Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 11.6 A, tp = 8/20 μs VF - 2.6 3.32 V tp = 100 ns (TLP; pin 2-1) rdyn - 0.19 -  at VR = 0 V; f = 1 MHz CD 89 112 135 pF TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5 V at IR = 1 μA VR 5 - - V ELECTRICAL CHARACTERISTICS VESD05C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse voltage Reverse current at VR = 5 V IR - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA VBR 6.85 7.26 7.65 V at IPP = IPPM = 8.7 A, tp = 8/20 μs VC - 10.3 11.5 V Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance Rev. 1.3, 05-Aug-2020 at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 8.7 A, tp = 8/20 μs VF - 2.2 2.74 V tp = 100 ns (TLP; pin 2-1) rdyn - 0.2 -  at VR = 0 V; f = 1 MHz CD 53 67 81 pF Document Number: 86130 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD08C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse voltage TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 8 V at IR = 0.1 μA VR 8 - - V μA Reverse current at VR = 8 V IR - 0.01 0.1 Reverse breakdown voltage at IR = 1 mA VBR 9.5 10 10.5 V at IPP = IPPM = 6.6 A, tp = 8/20 μs VC - 13.7 15.3 V Reverse clamping voltage at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 6.6 A, tp = 8/20 μs VF - 1.9 2.32 V tp = 100 ns (TLP; pin 2-1) rdyn - 0.23 -  at VR = 0 V; f = 1 MHz CD 37 47 57 pF TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 12 V Reverse voltage at IR = 0.1 μA VR 12 - - V Reverse current at VR = 12 V IR - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA VBR 13.9 14.7 15.5 V at IPP = IPPM = 4.4 A, tp = 8/20 μs VC - 20.5 22.7 V Forward clamping voltage Dynamic resistance Capacitance ELECTRICAL CHARACTERISTICS VESD12C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse clamping voltage at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 4.4 A, tp = 8/20 μs VF - 1.6 1.88 V tp = 100 ns (TLP; pin 2-1) rdyn - 0.4 -  at VR = 0 V; f = 1 MHz CD 26 33 40 pF TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 16 V Reverse voltage at IR = 0.1 μA VR 16 - - V Reverse current at VR = 16 V IR - 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA VBR 17 17.9 18.8 V at IPP = IPPM = 3.6 A, tp = 8/20 μs VC - 25.3 28 V Forward clamping voltage Dynamic resistance Capacitance ELECTRICAL CHARACTERISTICS VESD16C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance Rev. 1.3, 05-Aug-2020 at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 3.6 A, tp = 8/20 μs VF - 1.5 1.72 V tp = 100 ns (TLP; pin 2-1) rdyn - 0.53 -  at VR = 0 V; f = 1 MHz CD 21 27 33 pF Document Number: 86130 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD26C1-02V (Tamb = 25 °C, unless otherwise specified) TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 0.1 μA VR Reverse current at VR = 26 V Reverse breakdown voltage at IR = 1 mA at IPP = IPPM = 2.1 A, tp = 8/20 μs PARAMETER Protection paths Reverse stand off voltage Reverse clamping voltage MAX. UNIT - 1 lines - 26 V 26 - - V IR - < 0.01 0.1 μA VBR 27.6 29.1 30.6 V VC - 43 48 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 2.1 A, tp = 8/20 μs VF - 1.3 1.42 V tp = 100 ns (TLP; pin 2-1) rdyn - 1.9 -  at VR = 0 V; f = 1 MHz CD 14 17.5 21 pF TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 33 V Reverse voltage at IR = 0.1 μA VR 33 - - V Reverse current at VR = 33 V IR - < 0.01 0.1 μA Reverse breakdown voltage at IR = 1 mA VBR 35.5 37.4 39.3 V at IPP = IPPM = 1.6 A, tp = 8/20 μs VC - 56 62.5 V Forward clamping voltage Dynamic resistance Capacitance ELECTRICAL CHARACTERISTICS VESD33C1-02V (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance Rev. 1.3, 05-Aug-2020 at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 1.6 A, tp = 8/20 μs VF - 1.22 1.32 V tp = 100 ns (TLP; pin 2-1) rdyn - 3.6 -  at VR = 0 V; f = 1 MHz CD 12 15 18 pF Document Number: 86130 6 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors Axis Title 120 10000 Rise time = 0.7 ns to 1 ns VESD01... 100 100 VESD03... 53 40 2nd line CD (pF) 60 2nd line 1000 1st line 2nd line 2nd line IESD (%) 80 VESD05... VESD08... VESD12... 10 VESD16... 100 VESD26... 27 VESD33... 20 f = 1 MHz 0 1 0.01 10 -10 0 10 20 30 40 50 60 70 80 90 100 20557 0.1 2nd line 10 100 Fig. 4 - Typical Capacitance vs. Reverse Voltage Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330  / 150 pF) Axis Title 40 10000 100 1 VR (V) 2nd line t (ns) VESD33... 35 8 µs to 100 % VESD26... 30 80 20 µs to 50 % 40 2nd line VR (V) 60 25 1st line 2nd line 2nd line IPPM (%) 1000 VESD16... VESD12... 15 100 VESD08... 10 20 VESD05... 5 0 0 0.001 0.01 10 0 10 20 30 40 1 10 100 1000 10 000 Fig. 5 - Typical Reverse Voltage vs. Reverse Current Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0.1 IR (µA) 2nd line t (µs) 2nd line 20548 VESD33... VESD33... 100 Measured according IEC 61000-4-5 (8/20 µs - wave form) VESD26... VESD16... VESD12... VESD08... VESD05... VESD03... VESD01... VESD26... 2nd line VC-TLP (V) 2nd line VC (V) 20 VESD16... 10 VESD12... VESD08... VESD05... VESD03... VESD01... Transmission line pulse (TLP): tp = 100 ns 1 0 5 10 15 20 1 10 100 IPP (A) 2nd line ITLP (A) 2nd line Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current Rev. 1.3, 05-Aug-2020 Document Number: 86130 7 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors 1.0 5.0 0.9 4.5 0.8 0.6 4.0 VESD03... to VESD33... 3.5 2nd line VF (V) 2nd line VF (V) 0.7 0.5 0.4 0.3 3.0 2.5 2.0 1.5 VESD01... 0.2 1.0 0.1 0.5 0 1E-08 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 Measured according IEC 61000-4-5 (8/20 µs - wave form) 0 0 10 20 30 IF (A) 2nd line IF (A) 2nd line Fig. 7 - Typical Forward Voltage vs. Forward Current Fig. 8 - Typical Forward Voltage vs. Forward Current 0.1 [0.004] max. 0.20 [0.008] 0.08 [0.003] 0.75 [0.029] 0.1 [0.004] 0.3 [0.012] 0.55 [0.021] PACKAGE DIMENSIONS in millimeters [inches]: SOD-523 0.9 [0.035] 0.85 [0.033] min. 0.17 [0.007] 0.37 [0.015] 0.7 [0.028] 1.7 [0.067] 1.5 [0.059] 1.3 [0.051] 1.1 [0.043] 0.5 [0.020] 0.35 [0.014] 0.18 [0.007] Footprint recommendation: 1.45 [0.057] Document no.: S8-V-3880.02-003 (4) Created - Date: 04. April 2017 Rev. 4 - Date: 03. Aug. 2020 0.35 [0.014] 23093 Rev. 1.3, 05-Aug-2020 Document Number: 86130 8 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01C1-02V to VESD33C1-02V www.vishay.com Vishay Semiconductors CARRIER TAPE SOD-523 4 ± 0.1 A-A Section A 1.95 ± 0.1 1.4 ± 0.1 0.5 ± 0.05 Ø 0.5 ± 0.05 +0.3 3.5 ± 0.05 Ø 1.5 ± 0.1 8 -0.1 0.18 ± 0.02 1.75 ± 0.1 2 ± 0.05 B-B Section max. 2° 0.9 ± 0.1 max. 2° B B 0.73 ± 0.1 A 4 ± 0.1 S8-V-3717.03-005 (4) 05.07.2018 22959 ORIENTATION IN CARRIER TAPE SOD-523 Unreeling direction Cathode SOD-523 S8-V-3717.03-006 (4) 05.07.2018 Top view 22958 Rev. 1.3, 05-Aug-2020 Document Number: 86130 9 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2021 1 Document Number: 91000