VESD05A1-02V-G3-08

VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Single ESD-Protection Diode in SOD-523 FEATURES • Compact SOD-523 package Available • Low package height < 0.7 mm • 1-line ESD-protection 2 1 • AEC-Q101 qualified available 20278 • Working range 0 V to 5 V 19344 • Low leakage current IR < 0.1 μA • Surge current 16 A (at 8/20 μs) MARKING (example only) • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge XY Bar = cathode marking X = date code Y = type code (see table below) • e3 - Sn Tin plated exposed side wall of lead frame - Soldering can be checked by standard vision inspection - AOI = Automated Optical Inspection - No X-ray necessary ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 20279 3D 3D   3D Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS 8K PER 7" REEL (8 mm TAPE) PART NUMBER (EXAMPLE) AEC-Q101 QUALIFIED VESD05A1-02V - G 3 -08 VESD05A1-02V-G3-08 VESD05A1-02V H G 3 -08 VESD05A1-02VHG3-08 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS TIN PLATED GREEN ORDERING CODE (EXAMPLE) MOQ = 8K/BOX PACKAGE DATA VESD05A1-02V (-G3-08 / HG3-08) PACKAGE NAME SOD-523 TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING F DEVICE NAME 1.32 mg UL 94 V-0 . MSL level 1 Peak temperature max. 260 °C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.6, 23-Sep-2019 TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 16 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 192 W ± 30 kV ± 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C Document Number: 86129 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (VRWM) the protection diode between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (VC) is defined by the breakthrough voltage (VBR) level plus the voltage drop at the series impedance (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (VF) clamps the negative transient close to the ground level. Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour is bidirectional and asymmetrical (BiAs). 2 L1 1 BiAs 20280 Ground ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines Max. reverse working voltage VRWM - - 5 V Reverse voltage at IR = 1 μA VR 5 - - V Reverse current at VR = 5 V IR - < 0.1 1 μA PARAMETER Protection paths Reverse stand off voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Capacitance Rev. 1.6, 23-Sep-2019 at IR = 1 mA VBR 6 6.8 7.5 V at IPP = 1 A; 8/20 μs test pulse VC - 7.2 8.5 V at IPP = IPPM = 16 A; 8/20 μs test pulse VC - 10.5 12 V at IPP = 0.2 A; 8/20 μs test pulse VF - 0.88 1.1 V at IPP = 1 A; 8/20 μs test pulse VF - 1 1.5 V at IPP = IPPM = 16 A; 8/20 μs test pulse VF - 3.2 4.5 V at VR = 0 V; f = 1 MHz CD - 130 150 pF at VR = 2.5 V; f = 1 MHz CD - 76 - pF Document Number: 86129 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Axis Title Axis Title 10000 140 10000 120 f = 1 MHz Rise time = 0.7 ns to 1 ns 120 100 53 100 40 1000 1st line 2nd line 60 2nd line CD (pF) 1st line 2nd line 2nd line IESD (%) 100 1000 80 80 60 100 40 27 20 20 0 10 0 -10 0 t (ns) 2nd line 20557 10 0 10 20 30 40 50 60 70 80 90 100 1 2 3 4 5 6 VR (V) 2nd line 23076 Fig. 4 - Typical Capacitance vs. Reverse Voltage Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330  / 150 pF) Axis Title 8 10000 100 8 µs to 100 % 6 80 1000 5 20 µs to 50 % 40 2nd line VR (V) 60 1st line 2nd line 2nd line IPPM (%) Tj = 25 °C 7 Tj = 75 °C 4 Tj = 150 °C 3 100 2 20 1 0 0 1.0E-8 10 0 10 20 30 40 t (µs) 2nd line 20548 1.0E-7 Fig. 2 - 8/20μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 1.0E-5 1.0E-4 1.0E-3 Fig. 5 - Typical Reverse Voltage vs. Reverse Current Axis Title Axis Title 12 1.0E-6 IR (µA) 2nd line 23077 10000 Measured according IEC 61000-4-5 (8/20 µs - wave form) 10000 0.9 Tj = 25 °C 0.8 10 0.7 1000 2nd line VF (V) 6 100 4 1000 0.6 1st line 2nd line 2nd line VC (V) 8 Forward 1st line 2nd line Reverse 0.5 0.4 Tj = 75 °C 0.3 Tj = 150 °C 100 0.2 2 0.1 0 0 1.0E-7 10 0 5 23075 10 15 20 25 IPP (A) 2nd line Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current Rev. 1.6, 23-Sep-2019 23078 1.0E-6 1.0E-5 1.0E-4 1.0E-3 10 1.0E-2 IF (A) 2nd line Fig. 6 - Typical Forward Voltage vs. Forward Current Document Number: 86129 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors Axis Title 20 10000 Transmission line pulse (TLP): tp = 100 ns 18 16 1000 Reverse 12 1st line 2nd line 2nd line VC-TLP (V) 14 10 8 100 6 Forward 4 2 0 10 0 20 40 60 80 ITLP (A) 2nd line Fig. 7 - Typical Clamping Voltage vs. Peak Pulse Current 0.55 [0.021] 0.75 [0.029] 0.1 [0.004] max. 0.08 [0.003] 0.2 [0.008] PACKAGE DIMENSIONS in millimeters (inches): SOD-523 0.9 [0.035] 0.85 [0.033] min. 0.7 [0.028] 1.7 [0.067] 1.5 [0.059] 1.3 [0.051] 1.1 [0.043] 0.5 [0.020] 0.35 [0.014] 0.18 [0.007] foot print recommendation: 1.45 [0.057] Document no.: S8-V-3880.02-003 (4) Created - Date: 04. April 2017 Rev. 3 - Date: 27. May 2019 0.35 [0.014] 23093 Rev. 1.6, 23-Sep-2019 Document Number: 86129 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD05A1-02V (-G3-08 / HG3-08) www.vishay.com Vishay Semiconductors CARRIER TAPE SOD-523 4 ± 0.1 A-A Section A 1.95 ± 0.1 1.4 ± 0.1 0.5 ± 0.05 Ø 0.5 ± 0.05 +0.3 3.5 ± 0.05 Ø 1.5 ± 0.1 8 -0.1 0.18 ± 0.02 1.75 ± 0.1 2 ± 0.05 B-B Section max. 2° 0.9 ± 0.1 max. 2° B B 0.73 ± 0.1 A 4 ± 0.1 S8-V-3717.03-005 (4) 05.07.2018 22959 ORIENTATION IN CARRIER TAPE SOD-523 Unreeling direction Cathode SOD-523 S8-V-3717.03-006 (4) 05.07.2018 Top view 22958 Rev. 1.6, 23-Sep-2019 Document Number: 86129 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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