VESD05A2-03F-GS08

VESD05A2-03F Vishay Semiconductors 2-line ESD Protection Diode in SOT490 Features • Small SOT490 package • Very low leakage current e3 • ESD protection to IEC 61000-4-2 ± 30 kV (Air) • ESD protection to IEC 61000-4-2 ± 20 kV (Contact) • Two line asymmetrical ESD-protection (BiAs) • One line asymmetrical ESD-protection (BiSy) • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 2 1 Marking: Mechanical Data Case: SOT490 (plastic package) Lead free; non magnetic Molding Compound Flammability Rating: UL 94 V-0 Terminals: High temperature soldering guaranteed: 260 °C/10 sec. at terminals Weight: 2.5 mg Packaging Codes/Options: GS18 = 10 k per 13" reel (8 mm tape), 10 k/box GS08 = 3 k per 7" reel (8 mm tape), 15 k/box 3 4 A1 2 1 4 = date code (Example only) A1 = Type Code for VESD05A2-03F Maximum Ratings and Thermal Characteristics TA = 25 °C unless otherwise specified Symbol Value Unit ESD Air Discharge per IEC 61000-4-2 Parameter VESD ± 30 kV ESD Contact Discharge per IEC 61000-4-2 VESD ± 20 kV TJ - 40 to + 125 °C TSTG - 55 to + 150 °C Operating Temperature Storage Temperature Document Number 81201 Rev. 1.2, 03-Mar-06 www.vishay.com 1 VESD05A2-03F Vishay Semiconductors Electrical Characteristics TA = 25 °C unless otherwise specified BiAs-Mode (2-line Bidirectional Asymmetrical protection mode) With the VESD05A2-03F two signal or data lines (L1, L2) can be clamped to ground. Due to the different clamping levels in forward and reverse direction the VESD05A2-03F clamping behavior is Bidirectional and Asymmetric (BiAs). L1 L2 19742 Parameter Test Conditions Synbol Min. Reverse Stand-Off Voltage at max. reverse current VRWM 5 Max. Reverse current at VR = 5 V IR Max. Clamping voltage at IPP = 3 A Acc. IEC 61000-4-5 VC Max. Peak pulse current Acc. IEC 61000-4-5 See Fig. 1 IPPM Min. Reverse Breakdown Voltage at IR = 1 mA VBR Unit V 8.9 6.0 Max. 6.8 0.1 µA 11 V 3 A 7.5 V Capacitance at VR = 0 V; f = 1 MHz CD 20 23 pF Forward voltage at IF = 200 mA; tp < 300 µs VF 0.95 1.2 V ESD-Clamping voltage (Overshoot) at + 8 kV ESD-pulse acc. IEC 61000-4-2 VC-ESD +79 V ESD-Clamping voltage (Undershoot) at - 8 kV ESD-pulse acc. IEC 61000-4-2 VC-ESD -72 V www.vishay.com 2 Typ. Document Number 81201 Rev. 1.2, 03-Mar-06 VESD05A2-03F Vishay Semiconductors BiSy-Mode (1-line Bidirectional Symmetrical protection mode) Single-Line Bidirectional Symmetrical ESD-Protection (BiSy) With the VESD05A2-03F one signal or data line (L1) can be clamped to ground. Due to the same clamping levels in postive and negative direction the VESD05A2-03F voltage clamping behaviour is Bidirectional and Symmetrical (BiSy). In the BiSy-mode Pin no. 3 must not be connected. The load capacitance is about the half of the capacitance of the BiAs-mode. L1 19741 Parameter Test Conditions Synbol Min. Reverse Stand-Off Voltage at max. reverse current VRWM 5.5 Max. Reverse current at VR = 5.5 V IR Max. Clamping voltage at IPP = 3 A Acc. IEC 61000-4-5 VC Max. Peak pulse current Acc. IEC 61000-4-5 See Fig. 1 IPPM Min. Reverse Breakdown Voltage at IR = 1 mA VBR 7.5 8.2 V Capacitance at VR = 0 V; f = 1 MHz CD 10 12 pF ESD-Clamping voltage at ± 8 kV ESD-pulse acc. IEC 61000-4-2 VC-ESD ± 100 Document Number 81201 Rev. 1.2, 03-Mar-06 Typ. Unit 0.1 µA 12 V 3 A V 10.6 6.7 Max. V www.vishay.com 3 VESD05A2-03F Vishay Semiconductors Typical Characteristics TA = 25 °C unless otherwise specified 9 8 µs to 100% 100 % BiSy - Mode 8 7 80 % BiAs - Mode 60 % VR in V IPPM 6 20 µs to 50% 5 4 40 % 3 2 20 % 1 0 0.01 0% 0 10 20 30 40 Time in µs 19738 0.1 1 10 Figure 1. 8/20 µs Peak Pulse Current wave form acc. IEC 61000-4-5 100 1000 10000 IR in µA 19748 Figure 4. Typical Reverse Voltage VR vs. Reverse Current IR 12 25 f = 1 MHz 8 BiAs - Mode 15 VC in V CD in pF BiSy - Mode 10 20 BiAs - Mode Reverse 6 10 4 BiSy - Mode BiAs - Mode Forward 5 2 Measured acc. IEC 61000-4-5 (8/20 µs - wave form) 0 0 0 1 2 3 4 VR in V 19739 0 5 1 2 Figure 2. Typical Capacitance CD vs. Reverse Voltage VR 3 4 5 IPP in A 19749 Figure 5. Typical Clamping Voltage vs. Peak Pulse Current IPP 100 100 acc. IEC 61000-4-2 + 8 kV contact discharge BiAs - Mode 80 10 VC-ESD in V IF in mA 60 1 0.1 40 20 0 0.01 - 20 0.001 0.5 19747 0.6 0.7 0.8 0.9 1 VF in V Figure 3. Typical Forward Current IF vs. Forward Voltage VF www.vishay.com 4 - 40 - 10 19773 0 10 20 30 40 50 60 70 80 90 t in ns Figure 6. Typical Clamping performance at 8 kV contact discharge (Acc. IEC 61000-4-2) Document Number 81201 Rev. 1.2, 03-Mar-06 VESD05A2-03F Vishay Semiconductors 120 400 BiSy - Mode acc. IEC 61000-4-2 + 8 kV contact discharge 100 acc. IEC 61000-4-2 contact discharge 300 80 200 60 100 BiSy - Mode VC-ESD in V VC-ESD in V BiAs - Mode 40 20 0 - 100 BiAs - Mode 0 - 200 - 20 - 300 - 40 - 10 BiSy - Mode - 400 0 10 20 30 40 50 60 70 80 90 t in ns 19752 0 19755 Figure 7. Typical Clamping performance at 8 kV contact discharge (Acc. IEC 61000-4-2) 5 10 15 20 25 30 VESD in kV Figure 10. Typical clamping voltage at ± ESD contact discharge (Acc. IEC 61000-4-2) 40 acc. IEC 61000-4-2 - 8 kV contact discharge BiAs - Mode 20 VC-ESD in V 0 - 20 - 40 - 60 - 80 - 10 0 10 20 30 40 50 60 70 80 90 t in ns 19753 Figure 8. Typical Clamping performance at - 8 kV contact discharge (Acc. IEC 61000-4-2) 40 acc. IEC 61000-4-2 - 8 kV contact discharge BiSy - Mode 20 VC-ESD in V 0 - 20 - 40 - 60 - 80 - 100 - 120 - 10 0 10 20 19754 30 40 50 60 70 80 90 t in ns Figure 9. Typical Clamping performance at - 8 kV contact discharge (Acc. IEC 61000-4-2) Document Number 81201 Rev. 1.2, 03-Mar-06 www.vishay.com 5 VESD05A2-03F Vishay Semiconductors Package Dimensions in mm (Inches) - SOT490 19740 www.vishay.com 6 Document Number 81201 Rev. 1.2, 03-Mar-06 VESD05A2-03F Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81201 Rev. 1.2, 03-Mar-06 www.vishay.com 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1