VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
5-Line ESD Protection Diode Array in LLP75
FEATURES
6
5
4
• Ultra compact LLP75-6L package
• Low profile < 0.6 mm
• 5-line ESD protection
1
2
• Low leakage current IR < 0.1 μA
3
• Low load capacitance CD = 13 pF
19956
20453
1
• ESD immunity acc. IEC 61000-4-2
± 15 kV contact discharge
± 15 kV air discharge
MARKING (example only)
XX
YY
• Working voltage range VRWM = 5 V
• e4 - precious metal (e.g. Ag, Au, NiPd, NiPdAu) (no Sn)
21001
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Dot = pin 1 marking
XX = date code
YY = type code (see table below)
DESIGN SUPPORT TOOLS
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Models
Available
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
VESD05A5A-HSF
VESD05A5A-HSF-GS08
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
3000
MINIMUM ORDER QUANTITY
15 000
PACKAGE DATA
DEVICE NAME
PACKAGE
NAME
TYPE
CODE
WEIGHT
MOLDING COMPOUND
FLAMMABILITY RATING
VESD05A5A-HSF
LLP75-6L
AR
4.2 mg
UL 94 V-0
MOISTURE
SOLDERING CONDITIONS
SENSITIVITY LEVEL
MSL level 1
Peak temperature max. 260 °C
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS VESD05A5A-HSF
PARAMETER
Peak pulse current
Peak pulse power
ESD immunity
ESD immunity
Operating temperature
Storage temperature
Rev. 1.7, 04-Jan-2019
TEST CONDITIONS
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
BiSy-mode: each input (pin 1 to pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; tp = 8/20 μs; single shot
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2);
acc. IEC 61000-4-5; tp = 8/20 μs; single shot
BiSy-mode: each input (pin 1 - pin 6) to any other input pin.
Pin 2 not connected. Acc. IEC 61000-4-5; tp = 8/20 μs; single shot
Contact
discharge
acc. IEC61000-4-2; 10 pulses
BiAs-mode: each input (pin 1 to pin 6) to ground (pin 2)
Air
discharge
Contact
acc. IEC 61000-4-2 ; 10 pulses
discharge
BiSy-mode: each input (pin 1 to pin 6) to any other input pin.
Air
Pin 2 not connected.
discharge
Junction temperature
SYMBOL
VALUE
UNIT
2.5
A
2.5
A
33
W
43
W
± 15
kV
± 15
kV
± 10
kV
± 10
kV
-40 to +125
-55 to +150
°C
°C
IPPM
PPP
VESD
VESD
TJ
TSTG
Document Number: 81655
1
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
APPLICATION NOTE:
a. With the VESD05A5A-HSF 5 different signal or data lines can be clamped to ground. Due to the different clamping levels in
forward and reverse direction the VESD05A5A-HSF clamping behavior is bidirectional and asymmetrical (BiAs).
L1
L2
L3
6
5
4
1
2
3
L4
L5
19958
b. If symmetrical clamping behaviour is required the VESD05A5A-HSF can also be used as a bidirectional symmetrical
protection device protecting up to 4 lines. In this case pin no. 2 must not be connected.
L1
L2
L3
6
5
4
1
2
3
L4
19959
ELECTRICAL CHARACTERISTICS VESD05A5A-HSF (Between pin 1, 3, 4, 5 or 6, and pin 2)
(Tamb = 25 °C, unless otherwise specified)
PARAMETER
Protection paths
Reverse stand-off voltage
Reverse voltage
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Number of lines which can be protected
Nchannel
-
-
5
lines
Max. reverse working voltage
VRWM
-
-
5
V
at IR = 0.1 μA
VR
5
-
-
V
Max. reverse current
at VR = 5 V
IR
-
< 0.01
0.1
μA
Reverse breakdown voltage
at IR = 1 mA
VBR
6
6.7
7.5
V
at IPP = 1 A
VC
-
9
10
V
at IPP = IPPM = 2.5 A
VC
-
12
13
V
at IPP = 1 A
VF
-
2
2.5
V
at IPP = IPPM = 2.5 A
VF
-
3.2
4
V
at VR = 0 V; f = 1 MHz
CD
-
13
15
pF
at VR = 2.5 V; f = 1 MHz
CD
-
8
-
pF
Reverse clamping voltage
Forward clamping voltage
Line capacitance
Rev. 1.7, 04-Jan-2019
Document Number: 81655
2
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
120 %
100
Rise time = 0.7 ns to 1 ns
Discharge Current IESD
100 %
10
80 %
1
IF (mA)
60 %
53 %
0.1
40 %
27 %
0.01
20 %
0%
-10 0 10 20 30 40 50 60 70 80 90 100
0.001
0.5
Time (ns)
20557
0.6
0.7
0.8
Fig. 1 - ESD Discharge Current Wave Form
acc. IEC 61000-4-2 (330 /150 pF)
0.9
1
1.1
VF (V)
19949
Fig. 4 - Typical Forward Current IF vs. Forward Voltage VF
8
8 µs to 100 %
100 %
7
6
80 %
5
VR (V)
IPPM
60 %
20 µs to 50 %
4
40 %
3
2
20 %
1
0%
0
10
20
30
0
0.01
40
Time (µs)
20548
0.1
1
IR (µA)
19950
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
acc. IEC 61000-4-5
100 1000 10 000
10
Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR
14
16
Measured acc. IEC 61000-4-5 (8/20 µs - wave form)
f = 1 MHz
12
14
10
reverse
8
10
6
VC (V)
CD (pF)
12
8
VC
4
2
6
0
4
-2
2
forward
-4
-6
0
0
19948
1
2
3
4
VR (V)
Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR
Rev. 1.7, 04-Jan-2019
0
5
19951
0.5
1
1.5
2
2.5
3
3.5
4
IPP (A)
Fig. 6 - Typical Peak Clamping Voltage VC vs.
Peak Pulse Current IPP
Document Number: 81655
3
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
100
acc. IEC 61000-4-2
+ 8 kV
contact discharge
80
VC-ESD (V)
60
40
20
0
- 20
- 10 0 10 20 30 40 50 60 70 80 90
t (ns)
19994
Fig. 7 - Typical Clamping Performance at + 8 kV
Contact Discharge (acc. IEC 61000-4-2)
40
20
VC-ESD (V)
0
- 20
- 40
- 60
acc. IEC 61000-4-2
- 8 kV
contact discharge
- 80
- 100
- 10 0 10 20 30 40 50 60 70 80 90
t (ns)
19995
Fig. 8 - Typical Clamping Performance at - 8 kV
Contact Discharge (acc. IEC 61000-4-2)
200
acc. IEC 61000-4-2
contact discharge
150
VC-ESD (V)
100
50
VC-ESD
0
- 50
- 100
- 150
- 200
0
19954
5
10
15
20
VESD (kV)
Fig. 9 - Typical max. Clamping Voltage at ESD Contact
Discharge (acc. IEC 61000-4-2)
Rev. 1.7, 04-Jan-2019
Document Number: 81655
4
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
0.45 (0.018)
0.55 (0.022)
0.2 (0.008)
0.3 (0.012)
0.2 (0.008)
0.3 (0.012)
1 (0.039)
0.2 (0.008)
0.3 (0.012)
Heat sink
0.95 (0.037)
1.05 (0.041)
PACKAGE DIMENSIONS in millimeters (Inches): LLP75-6L
0.5 (0.020)
0.6 (0.024)
0.54 (0.021)
0.60 (0.023)
0.05 (0.002)
0 (0.000)
0.15 (0.006)
0.25 (0.010)
1.65 (0.065)
1.55 (0.061)
1.55 (0.061)
1.65 (0.065)
Pin 1 marking
Foot print recommendation:
0.5 (0.020)
0.5 (0.020)
0.3 (0.012)
0.3 (0.012)
Document no.:S8-V-3906.02-010 (4)
Created - Date: 04. MAY 2005
Rev. 4 - Date: 21. March 2006
0.15 (0.006)
1 (0.039)
0.5 (0.020)
1 (0.039)
0.25 (0.010)
0.15 (0.006)
Solder resist mask
Solder pad
0.5 (0.020)
20454
Rev. 1.7, 04-Jan-2019
Document Number: 81655
5
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VESD05A5A-HSF
www.vishay.com
Vishay Semiconductors
LLP75-6x
S9
F5
Pad layout - view from top / seen at bottom side
S8-V-3906.02-004 (4)
10.01.2005
Rev. 1.7, 04-Jan-2019
Pin 1 - location
Document Number: 81655
6
For technical questions, contact: ESDprotection@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 01-Jan-2023
1
Document Number: 91000
