VESD12A2-03G-G3-08

VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors Dual-Line ESD-Protection Diode Array in SOT-323 FEATURES • Compact SOT-323 package 1 2 • 2-line unidirectional ESD-protection • AEC-Q101 qualified available • Working range 1 V to 33 V 3 • ESD immunity acc. IEC 61000-4-2 ±15 kV to ±30 kV contact discharge ±15 kV to ±30 kV air discharge 20456 SOT-323 22743 MARKING (example only) WW VY • Lead plating: Sn (e3) - soldering can be checked by standard vision inspection - AOI = Automated Optical Inspection ABC • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 22744 ABC = type code (see table below) WW = date code working week VY = date code year LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART NUMBER (EXAMPLE) AEC-Q101 QUALIFIED RoHS COMPLIANT + LEAD (Pb)-FREE TERMINATIONS TIN PLATED GREEN 8K PER 7" REEL (8 mm TAPE) ORDERING CODE (EXAMPLE) MOQ = 8K/BOX VESD05A2-03G - G 3 -08 VESD05A2-03G-G3-08 VESD05A2-03G H G 3 -08 VESD05A2-03GHG3-08 MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE VESD01A2-03G-G3 SOT-323 D01 VESD03A2-03G-G3 SOT-323 D03 VESD05A2-03G-G3 SOT-323 D05 VESD08A2-03G-G3 SOT-323 D08 VESD12A2-03G-G3 SOT-323 D12 VESD16A2-03G-G3 SOT-323 D16 VESD26A2-03G-G3 SOT-323 D26 VESD33A2-03G-G3 SOT-323 D33 Rev. 1.2, 20-Jan-2021 WEIGHT MOLDING COMPOUND FLAMMABILITY RATING 5.2 mg UL 94 V-0 MSL level 1 Peak temperature max. 260 °C (according J-STD-020) Document Number: 86150 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VESD01A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 11 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 70 W 30 kV Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 11.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS VESD03A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER ESD immunity Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses 30 kV 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 8.7 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W Operating temperature Junction temperature VESD Storage temperature ABSOLUTE MAXIMUM RATINGS VESD05A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER ESD immunity Operating temperature 30 kV 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 6.60 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD ABSOLUTE MAXIMUM RATINGS VESD08A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.2, 20-Jan-2021 Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C Document Number: 86150 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS VESD12A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 4.4 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Contact discharge acc. IEC 61000-4-2; 10 pulses VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 3.6 A Peak pulse power Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 30 kV Operating temperature Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature ABSOLUTE MAXIMUM RATINGS VESD16A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER ESD immunity Operating temperature Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD 30 kV TJ -55 to +150 °C Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD26A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 2.1 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 20 kV Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature Storage temperature VESD 20 kV TJ -55 to +150 °C Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS VESD33A2-03G Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.2, 20-Jan-2021 TEST CONDITIONS SYMBOL VALUE UNIT Acc. IEC 61000-4-5, 8/20 μs/single shot IPPM 1.6 A Acc. IEC 61000-4-5, 8/20 μs/single shot PPP 100 W 15 kV Contact discharge acc. IEC 61000-4-2; 10 pulses Air discharge acc. IEC 61000-4-2; 10 pulses Junction temperature VESD 15 kV TJ -55 to +150 °C Tstg -55 to +150 °C Document Number: 86150 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD01A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse voltage Reverse current Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 1 V at IR = 100 μA VR 1 1.2 - V μA at VR = 1 V IR - 20 100 at IR = 20 mA VBR 2.5 2.65 2.8 V at IPP = IPPM = 11 A, tp = 8/20 μs VC - 5.6 6.4 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 11 A, tp = 8/20 μs VF - 2.5 3.2 V tp = 100 ns (TLP; reverse direction) rdyn - 0.13 - Ω at VR = 0 V; f = 1 MHz CD 153 192 230 pF ELECTRICAL CHARACTERISTICS VESD03A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 3 V Reverse voltage at IR = 20 μA VR 3 - - V Reverse current at VR = 3 V IR - 8 20 μA Reverse stand off voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance at IR = 1 mA VBR 4.4 4.65 4.9 V at IPP = IPPM = 11.6 A, tp = 8/20 μs VC - 7.8 8.70 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 11.6 A, tp = 8/20 μs VF - 2.6 3.32 V tp = 100 ns (TLP; reverse direction) rdyn - 0.19 - Ω at VR = 0 V; f = 1 MHz CD 89 112 135 pF ELECTRICAL CHARACTERISTICS VESD05A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 5 V Reverse voltage at IR = 1 μA VR 5 - - V Reverse current at VR = 5 V IR - 0.01 0.1 μA V Reverse stand off voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance Rev. 1.2, 20-Jan-2021 at IR = 1 mA VBR 6.85 7.26 7.65 at IPP = IPPM = 8.7 A, tp = 8/20 μs VC - 10.3 11.5 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 8.7 A, tp = 8/20 μs VF - 2.2 2.74 V tp = 100 ns (TLP; reverse direction) rdyn - 0.2 - Ω at VR = 0 V; f = 1 MHz CD 53 67 81 pF Document Number: 86150 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD08A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths Reverse stand off voltage Reverse voltage TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 8 V at IR = 0.1 μA VR 8 - - V μA Reverse current at VR = 8 V IR - 0.01 0.1 Reverse breakdown voltage at IR = 1 mA VBR 9.5 10 10.5 V at IPP = IPPM = 6.6 A, tp = 8/20 μs VC - 13.7 15.3 V Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 6.6 A, tp = 8/20 μs VF - 1.9 2.32 V tp = 100 ns (TLP; reverse direction) rdyn - 0.23 - Ω at VR = 0 V; f = 1 MHz CD 37 47 57 pF ELECTRICAL CHARACTERISTICS VESD12A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 12 V Reverse voltage at IR = 0.1 μA VR 12 - - V Reverse current at VR = 12 V IR - 0.01 0.1 μA Reverse stand off voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance at IR = 1 mA VBR 13.9 14.7 15.5 V at IPP = IPPM = 4.4 A, tp = 8/20 μs VC - 20.5 22.7 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 4.4 A, tp = 8/20 μs VF - 1.6 1.88 V tp = 100 ns (TLP; reverse direction) rdyn - 0.4 - Ω at VR = 0 V; f = 1 MHz CD 26 33 40 pF ELECTRICAL CHARACTERISTICS VESD16A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 16 V Reverse voltage at IR = 0.1 μA VR 16 - - V Reverse current at VR = 16 V IR - 0.01 0.1 μA Reverse stand off voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance Rev. 1.2, 20-Jan-2021 at IR = 1 mA VBR 17 17.9 18.8 V at IPP = IPPM = 3.6 A, tp = 8/20 μs VC - 25.3 28 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 3.6 A, tp = 8/20 μs VF - 1.5 1.72 V tp = 100 ns (TLP; reverse direction) rdyn - 0.53 - Ω at VR = 0 V; f = 1 MHz CD 21 27 33 pF Document Number: 86150 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS VESD26A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. Number of lines which can be protected Nchannel - Max. reverse working voltage VRWM - Reverse voltage at IR = 0.1 μA VR Reverse current at VR = 26 V Reverse breakdown voltage at IR = 1 mA at IPP = IPPM = 2.1 A, tp = 8/20 μs PARAMETER Protection paths Reverse stand off voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance MAX. UNIT - 2 lines - 26 V 26 - - V IR - < 0.01 0.1 μA VBR 27.6 29.1 30.6 V VC - 43 48 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 2.1 A, tp = 8/20 μs VF - 1.3 1.42 V tp = 100 ns (TLP; reverse direction) rdyn - 1.9 - Ω at VR = 0 V; f = 1 MHz CD 14 17.5 21 pF ELECTRICAL CHARACTERISTICS VESD33A2-03G (Tamb = 25 °C, between pin 1 - 3 or 2 - 3, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 2 lines Max. reverse working voltage VRWM - - 33 V Reverse voltage at IR = 0.1 μA VR 33 - - V Reverse current at VR = 33 V IR - < 0.01 0.1 μA Reverse stand off voltage Reverse breakdown voltage Reverse clamping voltage Forward clamping voltage Dynamic resistance Capacitance Rev. 1.2, 20-Jan-2021 at IR = 1 mA VBR 35.5 37.4 39.3 V at IPP = IPPM = 1.6 A, tp = 8/20 μs VC - 56 62.5 V at IPP = 1 A, tp = 300 μs VF 0.9 1.1 1.2 V at IPP = IPPM = 1.6 A, tp = 8/20 μs VF - 1.22 1.32 V tp = 100 ns (TLP; reverse direction) rdyn - 3.6 - Ω at VR = 0 V; f = 1 MHz CD 12 15 18 pF Document Number: 86150 6 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors Axis Title 120 10000 Rise time = 0.7 ns to 1 ns VESD01... 100 100 VESD03... 53 40 2nd line CD (pF) 60 2nd line 1000 1st line 2nd line 2nd line IESD (%) 80 VESD05... VESD08... VESD12... 10 VESD16... 100 VESD26... 27 VESD33... 20 f = 1 MHz 0 1 0.01 10 -10 0 10 20 30 40 50 60 70 80 90 100 20557 0.1 1 10 100 VR (V) 2nd line t (ns) 2nd line Fig. 4 - Typical Capacitance vs. Reverse Voltage Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω / 150 pF) Axis Title 40 10000 100 8 µs to 100 % VESD26... 30 80 20 µs to 50 % 40 25 2nd line VR (V) 60 1st line 2nd line 1000 2nd line IPPM (%) VESD33... 35 20 VESD16... VESD12... 15 100 VESD08... 10 VESD05... 20 5 0 0 0.001 0.01 10 0 10 20 30 40 0.1 1 10 100 1000 10 000 t (µs) 2nd line IR (µA) 2nd line Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Fig. 5 - Typical Reverse Voltage vs. Reverse Current 65 60 55 50 45 40 35 30 25 20 15 10 5 0 VESD33... VESD33... 100 Measured according IEC 61000-4-5 (8/20 µs - wave form) VESD26... VESD16... VESD12... VESD08... VESD05... VESD03... VESD01... VESD26... 2nd line VC-TLP (V) 2nd line VC (V) 20548 VESD16... 10 VESD12... VESD08... VESD05... VESD03... VESD01... Transmission line pulse (TLP): tp = 100 ns 1 0 5 10 15 20 1 10 100 IPP (A) 2nd line ITLP (A) 2nd line Fig. 3 - Typical Peak Clamping Voltage vs. Peak Pulse Current Fig. 6 - Typical Clamping Voltage vs. Peak Pulse Current Rev. 1.2, 20-Jan-2021 Document Number: 86150 7 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors 1.0 5.0 0.9 4.5 0.8 0.6 4.0 VESD03... to VESD33... 3.5 2nd line VF (V) 2nd line VF (V) 0.7 0.5 0.4 0.3 3.0 2.5 2.0 1.5 VESD01... 0.2 1.0 0.1 0.5 0 1E-08 1E-07 1E-06 1E-05 1E-04 1E-03 1E-02 1E-01 Measured according IEC 61000-4-5 (8/20 µs - wave form) 0 0 10 20 30 IF (A) 2nd line IF (A) 2nd line Fig. 7 - Typical Forward Voltage vs. Forward Current Fig. 8 - Typical Forward Voltage vs. Forward Current 8° 0° 0.08 (0.003) 0.15 (0.006) 0.0 (0.000) 0.1 (0.004) 2.0 (0.079) 0.8 (0.031) 1.1 (0.043) 2.2 (0.087) 0.8 (0.031) 1.0 (0.039) PACKAGE DIMENSIONS in millimeters (inches): SOT-323 0.46 (0.018) 0.26 (0.010) 0.525 (0.021) ref. 0.4 (0.016) 0.2 (0.008) 2.45 (0.096) 1.15 (0.045) 0.65 (0.026) typ 1.35 (0.053) 2.15 (0.085) foot print recommendation: 0.6 (0.024) 1.4 (0.055) Document no.: 6.541-5040.02-4 Rev. 1 - Date: 06. April 2010 0.65 (0.026) 1.8 (0.071) 0.8 (0.031) 1.2 (0.047) 21113 1.3 (0.051) Rev. 1.2, 20-Jan-2021 Document Number: 86150 8 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VESD01A2-03G to VESD33A2-03G www.vishay.com Vishay Semiconductors CARRIER TAPE SOT-323 2 ± 0.05 4 ± 0.1 A 1.75 ± 0.1 A-A Section 0.254 ± 0.013 +0.1 2.4 +0.1 +0.3 8 -0.1 3.5 ± 0.05 +0.1 Ø 1.55 0.0 +0.25 Ø 1 0.00 B B A 1.19 ± 0.1 4 ± 0.1 B-B Section 2.4 ± 0.1 Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 22762 ORIENTATION IN CARRIER TAPE SOT-323 Unreeling direction Document no.: S8-V-3717.08-002 (4) Created - Date: 09. Feb. 2010 Top view 22761 Rev. 1.2, 20-Jan-2021 Document Number: 86150 9 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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