VF20120C-M3/4W

VF20120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 TYPICAL APPLICATIONS VF20120C PIN 1 For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PIN 2 PIN 3 PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2 x 10 A VRRM 120 V IFSM 120 A VF at IF = 10 A 0.64 V TJ max. 150 °C Package ITO-220AB Diode variation Dual common cathode Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VF20120C UNIT VRRM 120 V per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 20 IF(AV) A 10 IFSM 120 A dV/dt 10 000 V/μs Isolation voltage from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG -40 to +150 °C Voltage rating of change (rated VR) Revision: 09-Mar-18 Document Number: 89324 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VF20120C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A IF = 10 A Instantaneous forward voltage per diode IF = 5 A IF = 10 A VR = 90 V Reverse current per diode VR = 120 V SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.62 - 0.81 0.90 0.54 - UNIT V 0.64 0.72 TA = 25 °C 8 - μA TA = 125 °C 6 - mA - 700 μA 14 45 mA IR (2) TA = 25 °C TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL VF20120C UNIT RJC 5.0 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.75 4W 50/tube Tube VF20120C-M3/4W  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 Resistive or Inductive Load 20 Average Power Loss (W) Average Forward Rectified Current (A) 25 15 10 5 D = 0.3 6 D = 0.2 D = 1.0 D = 0.1 4 T 2 Mounted on Specific Heatsink 0 D = 0.8 D = 0.5 8 D = tp/T tp 8 10 0 0 25 50 75 100 125 150 175 0 2 4 6 12 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 09-Mar-18 Document Number: 89324 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VF20120C www.vishay.com Vishay General Semiconductor 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 1000 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Revision: 09-Mar-18 Document Number: 89324 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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