VFT1045BP-M3/4W

VFT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AC • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS VFT1045BP For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. PIN 1 PIN 2 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(DC) Case: ITO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade 10 A VRRM 45 V IFSM 100 A VF at IF = 10 A 0.52 V TOP max. (AC mode) 150 °C TJ max. (DC forward current) 200 °C Package ITO-220AC Circuit configuration Single Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT1045BP VRRM 45 V IF(DC) (1) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 100 A Operating junction temperature range (AC mode) TOP -40 to +150 °C Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Junction temperature in DC forward current without reverse bias, t  1 h TJ (2)  200 °C Maximum repetitive peak reverse voltage Maximum DC forward bypassing current (fig. 1) UNIT Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5 A Instantaneous forward voltage IF = 10 A IF = 5 A IF = 10 A Reverse current VR = 45 V SYMBOL TA = 25 °C VF (1) TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TYP. MAX. 0.50 - UNIT 0.57 0.68 0.41 - 0.52 0.64 - 500 μA 5 15 mA V Notes Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms (1) Revision: 19-Mar-18 Document Number: 89453 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT1045BP www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT1045BP UNIT RJC 5.5 °C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AC UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.75 4W 50/tube Tube VFT1045BP-M3/4W   RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Instantaneous Reverse Current (mA) 12 DC Forward Current (A) 10 8 6 4 DC Forward Current at Thermal Equilibrium 2 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 0 0 25 50 75 100 125 150 175 200 20 Case Temperature (°C) 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Reverse Characteristics 10 000 TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Instantaneous Forward Voltage (V) Fig. 2 - Typical Instantaneous Forward Characteristics Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 0.1 1 10 100 Reverse Voltage (V) Fig. 4 - Typical Junction Capacitance Revision: 19-Mar-18 Document Number: 89453 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT1045BP Transient Thermal Impedance (°C/W) www.vishay.com Vishay General Semiconductor 10 Junction to Case 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Revision: 19-Mar-18 Document Number: 89453 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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