VFT1060C
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.39 V at IF = 2.5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
2
VFT1060C
PIN 1
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
60 V
IFSM
100 A
VF at IF = 5.0 A
0.50 V
TJ max.
150 °C
Package
ITO-220AB
Circuit configuration
Common cathode
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
SYMBOL
VFT1060C
UNIT
VRRM
60
V
per device
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated VR)
10
IF(AV)
A
5
IFSM
100
A
dV/dt
10 000
V/μs
Isolation voltage from terminal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
Revision: 16-Mar-18
Document Number: 89253
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT1060C
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 2.5 A
IF = 5.0 A
Instantaneous forward voltage per diode
IF = 2.5 A
IF = 5.0 A
VR = 60 V
Reverse current per diode
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
IR (2)
TA = 125 °C
TYP.
MAX.
0.49
-
UNIT
0.58
0.70
0.39
-
0.50
0.60
-
700
μA
6.6
25
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT1060C
UNIT
6.5
per diode
Typical thermal resistance
°C/W
RJC
per device
5.0
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VFT1060C-M3/4W
1.75
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
4.0
Average Power Disspation (W)
Average Forward Rectified Current (A)
12
10
8
6
4
2
Mounted on Specific Heatsink
0
D = 0.8
D = 0.5
3.5
D = 0.3
3.0
D = 0.2
2.5
D = 1.0
D = 0.1
2.0
T
1.5
1.0
0.5
D = tp/T
tp
4
5
0
0
25
50
75
100
125
150
0
1
2
3
6
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics
Revision: 16-Mar-18
Document Number: 89253
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT1060C
www.vishay.com
Vishay General Semiconductor
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Transient Thermal Impedance
100
10 000
TA = 150 °C
10
Junction Capacitance (pF)
Instantaneous Reverse Current (mA)
Junction to Case
TA = 125 °C
1
TA = 100 °C
0.1
0.01
1000
100
TA = 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Reverse Voltage (V)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Revision: 16-Mar-18
Document Number: 89253
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000
