VFT1080S
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Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
FEATURES
TMBS ®
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
1
2
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
TYPICAL APPLICATIONS
VFT1080S
PIN 1
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 2
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
0.60 V
TJ max.
150 °C
Package
ITO-220AB
Circuit configuration
Single
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT1080S
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum average forward rectified current (fig. 1)
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
Isolation voltage from termal to heatsink t = 1 min
VAC
1500
V
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 5 A
Instantaneous forward voltage
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current
VR = 80 V
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MAX.
UNIT
0.57
-
0.67
0.81
0.52
-
0.60
0.70
20
600
μA
10
20
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 16-Mar-18
Document Number: 89259
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT1080S
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VFT1080S
UNIT
RJC
5.5
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AB
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.73
4W
50/tube
Tube
VFT1080S-M3/4W
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Instantaneous Forward Current (A)
Average Forward Current (A)
12
Resistive or Inductive Load
10
8
6
4
2
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0
25
75
50
100
125
150
0
175
0.2
0.6
0.4
0.8
1.0
1.2
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics
8
100
Instantaneous Reverse Current (mA)
Case Temperature (°C)
D = 0.8
D = 0.5
D = 0.3
7
Average Power Loss (W)
TA = 150 °C
10
D = 0.2
6
5
D = 1.0
D = 0.1
4
T
3
2
1
D = tp/T
tp
0
0
2
4
6
8
10
12
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Forward Power Dissipation Characteristics
Fig. 4 - Typical Reverse Characteristics
Revision: 16-Mar-18
Document Number: 89259
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT1080S
Vishay General Semiconductor
10 000
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Junction to Case
Junction Capacitance (pF)
Transient Thermal Impedance (°C/W)
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1
0.1
0.01
0.1
1
10
100
1000
100
10
0.1
1
10
t - Pulse Duration (s)
Reverse Voltage (V)
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Revision: 16-Mar-18
Document Number: 89259
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000
