VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.46 V at IF = 5 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
1
2
3
VFT2080S
VT2080S
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PIN 2
TYPICAL APPLICATIONS
TO-262AA
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
K
K
MECHANICAL DATA
A
NC
1
VBT2080S
NC
HEATSINK
A
2
3
VIT2080S
K
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
PIN 1
PIN 2
PIN 3
K
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
PRIMARY CHARACTERISTICS
IF(AV)
20 A
VRRM
80 V
IFSM
150 A
VF at IF = 20 A
0.70 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Circuit configuration
Single
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT2080S
VFT2080S VBT2080S
VIT2080S
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum average forward rectified current (fig. 1)
IF(AV)
20
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
160
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C
IRRM
1.0
A
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Operating junction and storage temperature range
VAC
1500
V
TJ, TSTG
-55 to +150
°C
Revision: 16-Mar-18
Document Number: 89167
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 10 A
Instantaneous forward voltage
TA = 25 °C
IF = 20 A
VF (1)
IF = 5 A
IF = 10 A
TA = 125 °C
IF = 20 A
VR = 80 V
Reverse current
TA = 25 °C
IR (2)
TA = 125 °C
TYP.
MAX.
0.52
-
UNIT
0.61
-
0.80
0.92
0.46
-
0.54
-
0.70
0.78
30
700
μA
20
35
mA
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VT2080S
VFT2080S
VBT2080S
VIT2080S
UNIT
RJC
1.8
5.0
1.8
1.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT2080S-E3/4W
PREFERRED P/N
1.88
4W
50/tube
Tube
ITO-220AB
VFT2080S-E3/4W
1.75
4W
50/tube
Tube
TO-263AB
VBT2080S-E3/4W
1.38
4W
50/tube
Tube
TO-263AB
VBT2080S-E3/8W
1.38
8W
800/reel
Tape and reel
TO-262AA
VIT2080S-E3/4W
1.45
4W
50/tube
Tube
Revision: 16-Mar-18
Document Number: 89167
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3
www.vishay.com
Vishay General Semiconductor
Instantaneous Reverse Current (mA)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Average Forward Current (A)
24
Resistive or Inductive Load
V(B,I)T2080S
20
16
VFT2080S
12
8
4
0
0
25
75
50
100
125
150
175
100
TA = 150 °C
10
TA = 125 °C
1
TA = 100 °C
0.1
TA = 25 °C
0.01
0.001
20
Case Temperature (°C)
D = 0.2
16
14
D = 0.1
D = 1.0
12
10
8
T
6
4
2
D = tp/T
4
8
12
16
20
80
70
90
1000
100
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
24
100
Instantaneous Forward Current (A)
60
tp
0
0
50
10 000
D = 0.8
Junction Capacitance (pF)
Average Power Loss (W)
D = 0.5
D = 0.3
18
40
Fig. 4 - Typical Reverse Characteristics
Fig. 1 - Maximum Forward Current Derating Curve
20
30
Percent of Rated Peak Reverse Voltage (%)
1.0
1.2
10
Junction to Case
VFT2080S
V(B,I)T2080S
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Mar-18
Document Number: 89167
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 16-Mar-18
Document Number: 89167
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 16-Mar-18
Document Number: 89167
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000