VFT3080C-M3/4W

VFT3080C www.vishay.com Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS ® • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 2 3 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. VFT3080C PIN 1 PIN 2 PIN 3 MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 80 V IFSM 150 A VF at IF = 15 A 0.65 V TJ max. 150 °C Package ITO-220AB Circuit configuration Common cathode Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) SYMBOL VFT3080C UNIT VRRM 80 V per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load 30 IF(AV) A 15 IFSM 150 A dV/dt 10 000 V/μs Isolation voltage from terminal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG -55 to +150 °C Voltage rate of change (rated VR) Revision: 16-Mar-18 Document Number: 89262 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT3080C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 7.5 A Instantaneous forward voltage per diode TA = 25 °C IF = 15 A VF (1) IF = 5 A IF = 7.5 A TA = 125 °C IF = 15 A VR = 80 V Reverse current per diode TA = 25 °C IR (2) TA = 125 °C TYP. MAX. 0.52 - 0.58 - 0.75 0.82 0.46 - UNIT V 0.52 - 0.65 0.70 30 700 μA 20 35 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT3080C UNIT 6.0 per diode Typical thermal resistance °C/W RJC per device 5.0 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N ITO-220AB UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 1.76 4W 50/tube Tube VFT3080C-M3/4W  RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 35 14 Average Power Loss (W) Average Forward Current (A) 30 25 20 15 10 5 D = 0.8 D = 0.5 D = 0.3 Resistive or Inductive Load 12 D = 0.2 10 D = 1.0 D = 0.1 8 6 T 4 2 D = tp/T tp 0 0 0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Dissipation Characteristics Revision: 16-Mar-18 Document Number: 89262 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VFT3080C www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0.2 0.6 0.4 0.8 1.0 1.2 Junction to Case 1 0.1 0.01 0.1 10 1 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Transient Thermal Impedance 100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Reverse Current (mA) 0 10 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 20 30 40 50 60 70 80 90 100 1000 100 10 0.1 1 10 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance 100 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Revision: 16-Mar-18 Document Number: 89262 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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