VFT4045BP
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Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.28 V at IF = 5 A
FEATURES
TMBS ®
•
•
•
•
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Solder bath temperature 275 °C max. 10 s,
per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ITO-220AC
2
1
TYPICAL APPLICATIONS
VFT4045BP
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 1
PIN 2
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(DC)
Case: ITO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
40 A
VRRM
45 V
IFSM
240 A
VF at IF = 40 A
0.51 V
TOP max. (AC mode)
150 °C
TJ max. (DC forward current)
200 °C
Package
ITO-220AC
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum DC forward bypassing current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
SYMBOL
VFT4045BP
VRRM
45
UNIT
V
IF(DC) (1)
40
A
IFSM
240
A
°C
Operating junction temperature range (AC mode)
TOP
-40 to +150
Isolation voltage from thermal to heatsink t = 1 min
VAC
1500
V
Junction temperature in DC forward current without reverse bias, t 1 h
TJ (2)
200
°C
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
IF = 5 A
IF = 20 A
Instantaneous forward voltage
TA = 25 °C
IF = 40 A
VF (1)
IF = 5 A
IF = 20 A
TA = 125 °C
IF = 40 A
Reverse current
VR = 45 V
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MAX.
0.41
-
0.50
-
0.57
0.67
0.28
-
UNIT
V
0.41
-
0.51
0.63
-
3000
μA
29
85
mA
Notes
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(1)
(2)
Revision: 19-Mar-18
Document Number: 89456
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT4045BP
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VFT4045BP
UNIT
RJC
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
ITO-220AC
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
1.75
4W
50/tube
Tube
VFT4045BP-M3/4W
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Instantaneous Reverse Current (mA)
45
DC Forward Current (A)
40
35
30
25
20
15
10
DC Forward Current at
Thermal Equilibrium
5
0
0
25
50
75
100
125
150
175
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
20
200
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Reverse Characteristics
100 000
100
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
40
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10 000
1000
100
0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Instantaneous Forward Voltage (V)
Fig. 2 - Typical Instantaneous Forward Characteristics
0.1
1
10
100
Reverse Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 19-Mar-18
Document Number: 89456
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT4045BP
Transient Thermal Impedance (°C/W)
www.vishay.com
Vishay General Semiconductor
10
Junction to Case
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 5 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Revision: 19-Mar-18
Document Number: 89456
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000