VFT6045CBP
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
for PV Solar Cell Bypass Protection
Ultra Low VF = 0.33 V at IF = 10 A
FEATURES
TMBS ®
•
•
•
•
•
•
ITO-220AB
1
2
3
TYPICAL APPLICATIONS
VFT6045CBP
PIN 1
For use in solar cell junction box as a bypass diode for
protection, using DC forward current without reverse bias.
PIN 2
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF at IF = 30 A
TOP max. (AC mode)
TJ max. (DC forward current)
Package
Circuit configuration
Trench MOS Schottky technology
Low forward voltage drop, low power losses
High efficiency operation
Solder dip 275 °C max. 10 s, per JESD 22-B106
TJ 200 °C max. in solar bypass mode application
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
2 x 30 A
45 V
320 A
0.47 V
150 °C
200 °C
ITO-220AB
Common cathode
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
per device
Maximum average forward rectified current (fig. 1)
per diode
SYMBOL
VFT6045CBP
UNIT
VRRM
45
V
IF(AV) (1)
60
30
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM
320
Isolation voltage from terminal to heatsink, t = 1 min
VAC
1500
V
TOP, TSTG
-40 to +150
°C
TJ (2)
200
°C
Operating junction and storage temperature range (AC mode)
Junction temperature in DC forward current without reverse bias, t 1 h
A
Notes
(1) With heatsink
(2) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage per diode
Reverse current per diode
TEST CONDITIONS
IF = 10 A
IF = 15 A
IF = 30 A
IF = 10 A
IF = 15 A
IF = 30 A
VR = 45 V
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
TA = 125 °C
IR (2)
TYP.
MAX.
0.44
0.47
0.54
0.33
0.37
0.47
18
0.64
0.56
3000
50
UNIT
V
μA
mA
Notes
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(1)
(2)
Revision: 19-Mar-18
Document Number: 89370
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT6045CBP
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
per diode
Typical thermal resistance
VFT6045CBP
RJC
per device
UNIT
5.0
°C/W
3.5
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
VFT6045CBP-M3/4W
1.76
4W
50/tube
Tube
65
60
55
50
45
40
35
30
25
20
15
10
5
0
100
Instantaneous Forward Current (A)
DC Forward Rectified Current (A)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DC Forward Current at
Thermal Equilibrium
100
120
140
160
180
TA = 150 °C
10
TA = 100 °C
TA = 125 °C
1
TA = 25 °C
0.1
200
0
Fig. 1 - Maximum Forward Current Derating Curve
Average Power Loss (W)
16
14
D = 0.2
12
10
D = 1.0
D = 0.1
8
T
6
4
2
D = tp/T
tp
0
0
5
10
15
20
0.3
0.4
0.5
0.6
0.7
100
D = 0.8
25
30
35
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
Instantaneous Reverse Current (mA)
D = 0.5
D = 0.3
0.2
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
20
18
0.1
Instantaneous Forward Voltage (V)
Case Temperature (°C)
TA = 150 °C
TA = 125 °C
10
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 19-Mar-18
Document Number: 89370
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VFT6045CBP
www.vishay.com
Vishay General Semiconductor
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
100 000
10 000
1000
100
0.1
1
10
100
Junction to Case
1
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Revision: 19-Mar-18
Document Number: 89370
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000
