V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.63 at IF = 3 A
FEATURES
TMBS ®
TO-220AB
• Trench MOS Schottky technology
TO-262AA
• Low forward voltage drop, low power losses
K
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
3
1
1
V10150C
2
3
VI10150C
PIN 1
PIN 2
PIN 1
PIN 2
PIN 3
CASE
PIN 3
K
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
150 V
IFSM
60 A
VF at IF = 5 A
0.69 V
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
TJ max.
150 °C
Package
TO-220AB, TO-262AA
Diode variation
Common cathode
per
Polarity: as marked
Mounting Torque: 10 in-lbs max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Max. repetitive peak reverse voltage
V10150C
VRRM
per device
Max. average forward rectified current (fig. 1)
per diode
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (rated VR)
Operating junction and storage temperature range
VI10150C
150
V
10
IF(AV)
UNIT
A
5.0
IFSM
60
A
dV/dt
10 000
V/μs
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
IF = 3 A
Instantaneous forward voltage per diode
IF = 5 A
IF = 3 A
IF = 5 A
VR = 100 V
Reverse current per diode
VR = 150 V
SYMBOL
TA = 25 °C
VF (1)
TA = 125 °C
TYP.
MAX.
0.82
-
0.99
1.41
0.63
-
UNIT
V
0.69
0.75
TA = 25 °C
0.5
-
μA
TA = 125 °C
0.5
-
mA
-
100
μA
1.0
10
mA
TA = 25 °C
TA = 125 °C
IR (2)
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
Revision: 07-Nov-17
Document Number: 89154
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance per diode
V10150C
VI10150C
RJC
UNIT
4.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
V10150C-M3/4W
PREFERRED P/N
1.87
4W
50/tube
Tube
TO-262AA
VI10150C-M3/4W
1.45
4W
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
100
Resistive or Inductive Load
Instantaneous Forward Current (A)
Average Forward Rectified Current (A)
12
10
8
6
4
2
Mounted on Specific Heatsink
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0
25
50
75
100
125
150
175
0
0.2
0.4
0.6
0.8
1.0
1.4
1.2
1.6
Case Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
5
10
D = 0.8
Instantaneous Reverse Current (mA)
D = 0.5
Average Power Loss (W)
TA = 150 °C
D = 0.3
4
D = 0.2
3
D = 1.0
D = 0.1
2
T
1
D = tp/T
tp
4
5
0
1
TA = 150 °C
TA = 125 °C
0.1
TA = 100 °C
0.01
0.001
TA = 25 °C
0.0001
0.00001
0
1
2
3
6
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics Per Diode
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 07-Nov-17
Document Number: 89154
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
V10150C, VI10150C
www.vishay.com
Vishay General Semiconductor
10
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10 000
1000
100
10
0.1
1
10
Junction to Case
1
0.01
100
0.1
1
10
100
Reverse Voltage (V)
t - Pulse Duration (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.401 (10.19)
0.381 (9.68)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
Revision: 07-Nov-17
Document Number: 89154
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2023
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Document Number: 91000