VI40150CHM3/4W

V40150C, VB40150C, VI40150C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES TMBS ® TO-220AB TO-262AA • Trench MOS Schottky technology K • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 1 V40150C 2 3 1 2 3 VI40150C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS D2PAK (TO-263AB) For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. K 2 MECHANICAL DATA 1 VB40150C PIN 1 PIN 2 DESIGN SUPPORT TOOLS Case: TO-220AB, TO-262AA, and D2PAK (TO-263AB), Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade K HEATSINK click logo to get started Models Available Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked PRIMARY CHARACTERISTICS IF(AV) 2 x 20 A VRRM 150 V IFSM 160 A VF at IF = 20 A 0.75 V TJ max. 150 °C Package TO-220AB, TO-262AA, D2PAK (TO-263AB) Circuit configuration Common cathode       MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range IF(AV) IFSM V40150C VB40150C 150 40 20 VI40150C UNIT V A 160 A dV/dt 10 000 V/μs TJ, TSTG -55 to +150 °C Revision: 19-Jun-2018 Document Number: 89250 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40150C, VB40150C, VI40150C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage per diode TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C Reverse current per diode VR = 150 V MAX. 0.69 - 0.84 - 1.15 1.43 0.55 - UNIT V 0.64 - 0.75 0.82 TA = 25 °C 2 - μA TA = 125 °C 2.5 - mA - 250 μA 5 25 mA VI40150C UNIT IF = 20 A VR = 100 V TYP. TA = 25 °C IR (2) TA = 125 °C Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance per diode V40150C RJC VB40150C 1.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE 50/tube Tube TO-220AB V40150C-M3/4W 1.89 4W TO-262AA VI40150C-M3/4W 1.46 4W 50/tube Tube TO-263AB VB40150C-M3/I 1.39 I 800/reel Tape and reel Revision: 19-Jun-2018 Document Number: 89250 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40150C, VB40150C, VI40150C www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 100 Resistive or Inductive Load Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) 50 40 30 20 10 Mounted on Specific Heatsink 0 25 50 75 100 1 TA = 125 °C TA = 100 °C 0.1 0.01 TA = 25 °C 0.001 125 150 175 10 20 30 40 50 60 70 80 90 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics 20 Transient Thermal Impedance (°C/W) D = 0.3 16 D = 0.2 14 12 D = 1.0 10 D = 0.1 8 T 6 4 2 D = tp/T tp 0 0 2 4 6 8 10 12 14 16 18 100 10 D = 0.8 D = 0.5 18 Average Power Loss (W) TA = 150 °C 0.0001 0 20 22 Junction to Case 1 0.1 0.01 24 0.1 1 10 100 Average Forward Current (A) t - Pulse Duration (s) Fig. 2 - Forward Power Dissipation Characteristics Fig. 5 - Typical Transient Thermal Impedance 100 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C Junction Capacitance (pF) Instantaneous Forward Current (A) 10 10 TA = 125 °C TA = 100 °C 1 TA = 25 °C 0.1 1000 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance 100 Revision: 19-Jun-2018 Document Number: 89250 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40150C, VB40150C, VI40150C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 19-Jun-2018 Document Number: 89250 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V40150C, VB40150C, VI40150C www.vishay.com Vishay General Semiconductor D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0-0.01 (0-0.254) 0.037 (0.940) 0.027 (0.686) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) 0.110 (2.79) 0.205 (5.20) 0.195 (4.95) Mounting Pad Layout 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) 0.095 (2.41) Revision: 19-Jun-2018 Document Number: 89250 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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