VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
FEATURES
TMBS
®
• Trench MOS Schottky technology
TO-220AB
ITO-220AB
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
3
1
1
2
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VFT1080S
VT1080S
PIN 1
PIN 2
PIN 1
PIN 3
CASE
PIN 3
TO-263AB
PIN 2
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
TO-262AA
K
K
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB,
and TO-262AA package)
MECHANICAL DATA
A
NC
1
VBT1080S
3
VIT1080S
NC
K
HEATSINK
A
2
PIN 1
PIN 2
PIN 3
K
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: as marked
PRIMARY CHARACTERISTICS
Mounting Torque: 10 in-lbs maximum
IF(AV)
10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
0.60 V
TJ max.
150 °C
Package
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Circuit configuration
Single
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT1080S
VFT1080S VBT1080S
VIT1080S
UNIT
Maximum repetitive peak reverse voltage
VRRM
80
V
Maximum average forward rectified current (fig. 1)
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
100
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
110
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
1.0
A
Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min
VAC
1500
V
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
Revision: 16-Mar-18
Document Number: 89165
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Breakdown voltage
IR = 10 mA
IF = 5 A
Instantaneous forward voltage
IF = 10 A
IF = 5 A
IF = 10 A
VR = 80 V
Reverse current
SYMBOL
TYP.
MAX.
UNIT
VBR
80 (minimum)
-
V
0.57
-
0.67
0.81
0.52
-
0.60
0.70
20
600
μA
10
20
mA
TA = 25 °C
TA = 25 °C
VF (1)
TA = 125 °C
TA = 25 °C
IR (2)
TA = 125 °C
V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VT1080S
VFT1080S
VBT1080S
VIT1080S
UNIT
RJC
2.2
5.5
2.2
2.2
°C/W
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
VT1080S-E3/4W
PREFERRED P/N
1.88
4W
50/tube
Tube
ITO-220AB
VFT1080S-E3/4W
1.73
4W
50/tube
Tube
TO-263AB
VBT1080S-E3/4W
1.36
4W
50/tube
Tube
TO-263AB
VBT1080S-E3/8W
1.36
8W
800/reel
Tape and reel
TO-262AA
VIT1080S-E3/4W
1.43
4W
50/tube
Tube
Revision: 16-Mar-18
Document Number: 89165
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Resistive or Inductive Load
Instantaneous Reverse Current (mA)
Average Forward Current (A)
12
V(B,I)T1080S
10
8
VFT1080S
6
4
2
0
0
25
75
50
100
125
150
175
TA = 125 °C
TA = 100 °C
1
0.1
TA = 25 °C
0.01
0.001
20
30
40
50
60
80
70
90
100
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics
10 000
Junction Capacitance (pF)
D = 0.2
6
5
D = 1.0
D = 0.1
4
T
3
2
1
D = tp/T
2
4
6
8
1000
100
tp
10
0.1
0
0
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
D = 0.8
D = 0.5
D = 0.3
7
Average Power Loss (W)
TA = 150 °C
10
Percent of Rated Peak Reverse Voltage (%)
8
10
12
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
100
Instantaneous Forward Current (A)
100
TA = 150 °C
10
TA = 125 °C
TA = 100 °C
1
TA = 25 °C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
10
Junction to Case
VFT1080S
V(B,I)T1080S
1
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 16-Mar-18
Document Number: 89165
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.161 (4.08)
0.139 (3.53)
0.055 (1.39)
0.045 (1.14)
0.113 (2.87)
0.103 (2.62)
1
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.603 (15.32)
0.573 (14.55)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
Revision: 16-Mar-18
Document Number: 89165
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.950 (24.13)
0.920 (23.37)
1
PIN
2 3
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.401 (10.19)
0.381 (9.68)
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.160 (4.06)
0.140 (3.56)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45)
0.560 (14.22)
0.530 (13.46)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
D2PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN.
0.022 (0.56)
0.014 (0.35)
Mounting Pad Layout
0.42 (10.66) MIN.
0.055 (1.40)
0.045 (1.14)
K
0.33 (8.38) MIN.
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.624 (15.85)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.055 (1.40)
0.047 (1.19)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
Revision: 16-Mar-18
Document Number: 89165
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000