VIT2080S-E3/4W

VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 1 2 3 VFT2080S VT2080S PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS TO-262AA For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. K K MECHANICAL DATA A NC 1 VBT2080S NC HEATSINK A 2 3 VIT2080S K • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) PIN 1 PIN 2 PIN 3 K Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: as marked PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 80 V IFSM 150 A VF at IF = 20 A 0.70 V TJ max. 150 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Circuit configuration Single Mounting Torque: 10 in-lbs maximum         MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VT2080S VFT2080S VBT2080S VIT2080S UNIT Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 160 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 1.0 A Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range VAC 1500 V TJ, TSTG -55 to +150 °C Revision: 16-Mar-18 Document Number: 89167 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage TA = 25 °C IF = 20 A VF (1) IF = 5 A IF = 10 A TA = 125 °C IF = 20 A VR = 80 V Reverse current TA = 25 °C IR (2) TA = 125 °C TYP. MAX. 0.52 - UNIT 0.61 - 0.80 0.92 0.46 - 0.54 - 0.70 0.78 30 700 μA 20 35 mA V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL VT2080S VFT2080S VBT2080S VIT2080S UNIT RJC 1.8 5.0 1.8 1.8 °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB VT2080S-E3/4W PREFERRED P/N 1.88 4W 50/tube Tube ITO-220AB VFT2080S-E3/4W 1.75 4W 50/tube Tube TO-263AB VBT2080S-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT2080S-E3/8W 1.38 8W 800/reel Tape and reel TO-262AA VIT2080S-E3/4W 1.45 4W 50/tube Tube Revision: 16-Mar-18 Document Number: 89167 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor Instantaneous Reverse Current (mA) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Average Forward Current (A) 24 Resistive or Inductive Load V(B,I)T2080S 20 16 VFT2080S 12 8 4 0 0 25 75 50 100 125 150 175 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 0.1 TA = 25 °C 0.01 0.001 20 Case Temperature (°C) D = 0.2 16 14 D = 0.1 D = 1.0 12 10 8 T 6 4 2 D = tp/T 4 8 12 16 20 80 70 90 1000 100 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance Transient Thermal Impedance (°C/W) TA = 150 °C TA = 125 °C 10 TA = 100 °C 1 TA = 25 °C 0.1 0 0.2 0.4 0.6 0.8 100 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 10 0.1 24 100 Instantaneous Forward Current (A) 60 tp 0 0 50 10 000 D = 0.8 Junction Capacitance (pF) Average Power Loss (W) D = 0.5 D = 0.3 18 40 Fig. 4 - Typical Reverse Characteristics Fig. 1 - Maximum Forward Current Derating Curve 20 30 Percent of Rated Peak Reverse Voltage (%) 1.0 1.2 10 Junction to Case VFT2080S V(B,I)T2080S 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 16-Mar-18 Document Number: 89167 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 16-Mar-18 Document Number: 89167 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VT2080S-E3, VFT2080S-E3, VBT2080S-E3, VIT2080S-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.401 (10.19) 0.381 (9.68) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) NC K A 0.624 (15.85) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 16-Mar-18 Document Number: 89167 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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