VLIN1626-02G-E3-08

VLIN1626-02G www.vishay.com Vishay Semiconductors Low Capacitance, Single-Line ESD-Protection Diode in SOD-323 FEATURES • For LIN-Bus applications • Small SOD-323 package 2 1 • Working range: -16 V; +26.5 V • Low leakage current IR < 0.05 μA • Low load capacitance CD < 18 pF 20503 22756 SOD-323 • ESD-protection acc. IEC 61000-4-2 ± 30 kV contact discharge ± 30 kV air discharge MARKING (example only) • ESD capability according to AEC-Q101: human body model: class H3B: > 8 kV XYZ 1 • e3 - pins plated with tin (Sn) • 1-line ESD-protection XYZ = type code (see table below) bar = pin 1 • AEC-Q101 qualified available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Models ORDERING INFORMATION ENVIRONMENTAL AND QUALITY CODE PART NUMBER (EXAMPLE) AEC-Q101 QUALIFIED RoHS-COMPLIANT + LEAD (Pb)-FREE TERMINATIONS PACKAGING CODE TIN PLATED ORDERING CODE (EXAMPLE) 3K PER 7" REEL 10K PER 13" REEL (8 mm TAPE) (8 mm TAPE) 15K/BOX = MOQ 10K/BOX = MOQ STANDARD GREEN VLIN1626-02G - E - 3 -08 - VLIN1626-02G-E3-08 VLIN1626-02G H E - 3 -08 - VLIN1626-02GHE3-08 VLIN1626-02G - E - 3 - -18 VLIN1626-02G-E3-18 VLIN1626-02G H E - 3 - -18 VLIN1626-02GHE3-18 PACKAGE DATA DEVICE NAME PACKAGE NAME TYPE CODE WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS SOD-323 6A1 4.30 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 °C VLIN1626-02G ABSOLUTE MAXIMUM RATINGS PARAMETER Peak pulse current Peak pulse power ESD immunity Operating temperature Storage temperature Rev. 1.4, 19-Nov-2021 TEST CONDITIONS Pin 1 to pin 2; TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot Pin 2 to pin 1; TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot TA = 25 °C, acc. IEC 61000-4-5; tp = 8/20 μs; single shot Contact discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C Air discharge acc. IEC 61000-4-2; 10 pulses, TA = 25 °C Junction temperature SYMBOL IPPM PPP VESD VALUE 6 4 200 ± 30 ± 30 TJ -55 to +150 TSTG -55 to +150 UNIT A W kV °C Document Number: 85902 1 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLIN1626-02G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Protection paths TEST CONDITIONS / REMARKS SYMBOL MIN. TYP. MAX. UNIT Number of lines which can be protected Nchannel - - 1 lines - - 16 - - 26.5 Pin 1 to pin 2; max. reverse working voltage Reverse stand-off voltage VRWM Pin 2 to pin 1; max. reverse working voltage Pin 1 to pin 2; at IR = 0.05 μA 16 - - 26.5 - - - - 0.05 - - 0.05 17.1 18.7 20.3 28 30 32 Pin 1 to pin 2; at IPP = 1 A; tp = 8/20 μs - 22 25 Pin 1 to pin 2; at IPP = 6 A; tp = 8/20 μs - 29 33 - 32 40 Reverse voltage VR Pin 2 to pin 1; at IR = 0.05 μA Pin 1 to pin 2; at VRWM = 16 V Reverse current IR Pin 2 to pin 1; at VRWM = 26.5 V Pin 1 to pin 2; at IR = 1 mA Reverse breakdown voltage VBR Pin 2 to pin 1; at IR = 1 mA Reverse clamping voltage VC Pin 2 to pin 1; at IPP = 1 A; tp = 8/20 μs Pin 2 to pin 1; at IPP = 4 A; tp = 8/20 μs Capacitance At VR = 0 V, f = 1 MHz CD - 39 50 - 15.5 18 V V μA V V pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Axis Title 120 18 10000 100 14 80 12 53 40 2nd line 60 CD (pF) 1000 1st line 2nd line 2nd line IESD (%) f = 1 MHz Pin 2 - 1 16 Rise time = 0.7 ns to 1 ns 10 8 6 100 4 27 20 2 0 0 10 -10 0 -20 10 20 30 40 50 60 70 80 90 100 20557 t (ns) -10 2nd line 10000 35 8 µs to 100 % 30 10000 Pin 2-1 30 25 20 µs to 50 % 40 2nd line VR (V) 1st line 2nd line 1000 20 TJ = 150 °C 1000 100 °C 1st line 2nd line 80 2nd line IPPM (%) 20 Axis Title Axis Title 60 10 Fig. 3 - Typical Capacitance CD vs. Reverse Voltage VR Fig. 1 - ESD Discharge Current Wave Form acc. IEC 61000-4-2 (330 Ω / 150 pF) 100 0 VR (V) 22767 75 °C 15 25 °C -40 °C 100 100 10 20 5 0 10 0 10 20 30 t (µs) 2nd line 20548 Fig. 2 - 8/20 μs Peak Pulse Current Wave Form acc. IEC 61000-4-5 Rev. 1.4, 19-Nov-2021 0 0.01 40 22811 0.1 1 10 100 1000 10 10 000 IR (µA) 2nd line Fig. 4 - Typical Reverse Voltage VR vs. Reverse Current IR Document Number: 85902 2 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLIN1626-02G www.vishay.com 25 Vishay Semiconductors Pin 1-2 20 TJ = 150 °C 2nd line VR (V) 15 100 °C 75 °C 10 25 °C -40 °C 5 0 0.01 0.1 1 10 100 1000 10 000 IR (µA) 2nd line 22812 Fig. 5 - Typical Reverse Voltage VR vs. Reverse Current IR 45 40 Pin 2-1 35 2nd line VC (V) 30 25 Pin 1-2 20 15 10 Measured according IEC 61000-4-5 (8/20 µs - wave form) 5 0 0 1 2 3 4 5 6 7 IPP (A) 2nd line 22813 Fig. 6 - Typical Peak Clamping Voltage VC vs. Peak Pulse Current IPP 60 Transmission Line Pulse TLP: tp = 100 ns 50 Pin 2-1 VC-TLP (V) 40 Pin 1- 2 30 20 10 0 0 10 22770 20 30 40 50 60 ITLP (A) Fig. 7 - Typical Clamping Voltage VC-TLP vs. Pulse Current ITLP Rev. 1.4, 19-Nov-2021 Document Number: 85902 3 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLIN1626-02G www.vishay.com Vishay Semiconductors 0.1 [0.004] max. 0.15 [0.006] 0.10 [0.004] 0.2 [0.008] 0.8 [0.031] 1.15 [0.045] PACKAGE DIMENSIONS in millimeters (inches) SOD-323 0° - 8° 0.40 [0.016] 0.25 [0.010] 1.95 [0.077] 2.50 [0.098] 1.1 [0.043] 0.20 [0.008] 0.40 [0.016] 2.85 [0.112] 1.5 [0.059] 1.60 [0.063] Cathode bar Footprint recommendation: 1.6 [0.063] Document no.: S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 6 - Date: 23.Sept.2016 22771 Rev. 1.4, 19-Nov-2021 0.8 [0.031] 0.6 [0.024] 0.8 [0.031] Document Number: 85902 4 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VLIN1626-02G www.vishay.com Vishay Semiconductors CARRIER TAPE SOD-323 A 1.75 ± 0.1 4 ± 0.1 2 ± 0.05 A-A Section 0.254 ± 0.013 2.9 ± 0.1 +0.3 8 -0.1 3.5 ± 0.05 +0.1 Ø 1.5 0.0 +0.25 Ø 1 0.00 B B A 1.35 ± 0.1 4 ± 0.1 B-B Section 1.52 ± 0.1 Document no.: S8-V-3717.07-002 (4) Created - Date: 09. Feb. 2010 22824 ORIENTATION IN CARRIER TAPE SOD-323 Unreeling direction Cathode Document no.: S8-V-3717.07-003 (4) Created - Date: 09. Feb. 2010 22772 Rev. 1.4, 19-Nov-2021 Top view Document Number: 85902 5 For technical questions, contact: ESDprotection@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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