VN2406L

TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix N-Channel 240-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (
) VGS(th) (V) ID (A) TN2410L 10 @ VGS = 4.5 V 0.5 to 1.8 0.18 VN2406D 6 @ VGS = 10 V 0.8 to 2 1.12 6 @ VGS = 10 V 0.8 to 2 0.18 VN2410L 10 @ VGS = 10 V 0.8 to 2 0.18 VN2410LS 10 @ VGS = 10 V 0.8 to 2 0.19 VN2406L 240 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc. D Telephone Mute Switches, Ringer Circuits D Power Supply, Converters D Motor Control Low On-Resistance: 3.5
Secondary Breakdown Free: 260 V Low Power/Voltage Driven Low Input and Output Leakage Excellent Thermal Stability Low Offset Voltage Full-Voltage Operation Easily Driven Without Buffer Low Error Voltage No High-Temperature “Run-Away” ’Device Marking Front View TO-226AA TN2410L (TO-92) S G D 1 VN2406L 2 “S” VN 2406L xxyy 3 VN2410L Top View (Copper Lead Frame) (Tab Drain) G ’Device Marking Front View 1 S 1 G 2 D 3 ’Device Marking Front View VN2410LS VN2406D D 2 S 3 VN2406D “S” xxyy “S” VN 2410L xxyy TN2410L VN2406L VN2410L TO-92S TO-220AB “S” TN 2410L xxyy “S” VN 2410LS xxyy “S” = Siliconix Logo xxyy = Date Code “S” = Siliconix Logo xxyy = Date Code Top View Top View VN2406D VN2410LS “S” = Siliconix Logo xxyy = Date Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN2410L VN2406Db VN2406L VN2410L VN2410LS Drain-Source Voltage VDS 240 240 240 240 240 Gate-Source Voltage VGS "20 "20 "20 "20 "20 0.18 1.12 0.18 0.18 0.19 0.11 0.7 0.11 0.11 0.12 1 3 1.7 1.7 2 Continuous Drain Current (TJ = 150_C) TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation IDM TA= 25_C TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range ID PD RthJA TJ, Tstg 0.8 20 0.8 0.8 0.9 0.32 8 0.32 0.32 0.4 156 6.25c 156 156 139 –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. c. Maximum junction-to-case Document Number: 70204 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-1 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits TN2410L Parameter Symbol Test Conditions Typa Min V(BR)DSS VGS = 0 V, ID = 100 A 260 240 VGS(th) VDS = VGS, ID = 1 mA 1.4 0.5 Max VN2406D/L Min Max VN2410L/LS Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage 240 1.8 0.8 VDS = 0 V, VGS = "15 V Gate-Body Leakage TJ = 125_C IGSS VDS = 0 V, VGS = "20 V VDS = 192 V, VGS = 0 V TJ = 125_C Zero Gate Voltage Drain Current IDSS Drain-Source On-Resistanceb ID(on) 0.01 1 1 100 VDS = 120 V, VGS = 0 V VDS = 10 V, VGS = 4.5 V 0.8 VDS = 15 V, VGS = 10 V 1.5 VGS = 2.5 V, ID = 0.1 A 7.5 VGS = 3.5 V, ID = 0.05 A 4.5 15 4 10 7.5 20 VGS = 4.5 V, ID = 0.2 A rDS(on) TJ = 125_C VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb gfs Input Capacitance Ciss 2 "100 "100 "500 "500 10 10 500 500 V nA 1 A 1 10 10
6 10 6.5 14.8 24.7 500 VDS = 10 V, ID = 0.5 A 530  A 0.25 3.5 VDS = 10 V, ID = 0.2 A VDS = 25 V, VGS = 0 V f = 1 MHz 0.8 "10 TJ = 125_C On-State Drain Currentb 240 2 100 300 mS 300 115 135 135 135 Output Capacitance Coss 30 50 50 50 Reverse Transfer Capacitance Crss 5 20 20 20 tON 5 35 8 8 8 8 pF Switchingc Turn-On Time td(on) tr tOFF Turn-Off Time 3 VDD = 60 V, RL = 150
ID ^ 0.4 A, VGEN = 10 V RG = 25
11-2 ns 60 td(off) 20 23 23 tf 6 34 34 Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 s duty cycle v 2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 26 VNDB24 Document Number: 70204 S-04279—Rev. F, 16-Jul-01 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 1.0 4.0 V 0.6 3.5 V 0.4 3.0 V VGS = 3 V 2.6 V 160 ID – Drain Current (mA) 0.8 ID – Drain Current (A) Output Characteristics for Low Gate Drive 200 VGS = 10 V 2.5 V 0.2 2.4 V 120 2.2 V 80 2.0 V 40 1.8 V 2.0 V 0 0 0 1 2 3 4 5 0 0.4 VDS – Drain-to-Source Voltage (V) Transfer Characteristics 1.6 2.0 12 125_C VDS = 15 V 10 TJ = –55_C rDS(on) – On-Resistance ( Ω ) 0.4 ID – Drain Current (A) 1.2 On-Resistance vs. Gate-to-Source Voltage 0.5 25_C 0.3 0.2 0.1 8 6 1.0 A 0.5 A 4 I D = 0.1 A 2 0 0 0 1 2 3 4 0 5 4 8 12 16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 6 20 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 2.25 VGS = 10 V rDS(on) – Drain-Source On-Resistance ( Ω ) 0.8 VDS – Drain-to-Source Voltage (V) 5 4 3 2 1 0 VGS = 10 V ID = 0.5 A 2.00 1.75 0.1 A 1.50 1.25 1.00 0.75 0.50 0 0.1 0.2 0.3 0.4 ID – Drain Current (A) Document Number: 70204 S-04279—Rev. F, 16-Jul-01 0.5 0.6 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 400 VGS = 0 V f = 1 MHz VDS = 5 V 300 C – Capacitance (pF) ID – Drain Current (mA) TJ = 150_C 1 25_C 0.1 200 Ciss 100 Coss –55_C Crss 0.01 0 0.3 0.7 1.1 1.5 0 VGS – Gate-to-Source Voltage (V) 20 30 40 50 VDS – Drain-to-Source Voltage (V) Gate Charge Load Condition Effects on Switching 100 15.0 VDS = 60 V RG = 25
ID = 0.5 A 12.5 td(off) t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 10 10.0 VDS = 120 V 7.5 192 V 5.0 tf 10 td(on) 2.5 tr 1 0 0 400 800 1200 1600 0.01 2000 0.1 Qg – Total Gate Charge (pC) 1 ID – Drain Current (A) Drive Resistance Effects on Switching Source-Drain Diode Forward Voltage 100 1 VDD = 60 V RL = 150
ID = 0.4 A IS – Source Current (A) t – Switching Time (ns) td(off) tf 10 td(on) TJ = 150_C 0.1 TJ = 25_C tr 1 0.01 1 2 5 10 20 RG – Gate Resistance (
) www.vishay.com 11-4 50 100 0 0.5 1.0 1.5 2.0 2.5 VSD – Source-Drain Voltage (V) Document Number: 70204 S-04279—Rev. F, 16-Jul-01 TN2410L, VN2406D/L, VN2410L/LS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) Document Number: 70204 S-04279—Rev. F, 16-Jul-01 www.vishay.com 11-5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1