VO4158H-X007T

VO4158 www.vishay.com Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing, High dV/dt, Low Input Current FEATURES A 1 6 MT2 • High static dV/dt 5 kV/μs C 2 5 NC • High input sensitivity IFT = 1.6 mA, 2 mA, and 3 mA 4 MT1 • 300 mA on-state current NC 3 ZCC* • Zero voltage crossing detector * Zero crossing circuit • 800 V blocking voltage 21842-1 • Isolation rated voltage 4420 VRMS LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models Design Tools Related Documents Models APPLICATIONS Footprints • Solid-state relays • Industrial controls Schematics • Office equipment DESCRIPTION • Consumer appliances The VO4158 consists of a GaAs IRLED optically coupled to a photosensitive zero crossing TRIAC packaged in a DIP-6 package. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of 1.6 mA for bin D, 2 mA for bin H, and 3 mA for bin M. The new phototriac zero crossing family uses a proprietary dV/dt clamp resulting in a static dV/dt of greater than 5 kV/μs. The VO4158 isolates low-voltage logic from 120 VAC, 240 VAC, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. AGENCY APPROVALS • UL • cUL • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • FIMKO ORDERING INFORMATION V O 4 1 5 8 X - X PART NUMBER # # PACKAGE OPTION T TAPE AND REEL DIP-6 7.62 mm Option 7 > 0.7 mm VDRM 800 AGENCY CERTIFIED / PACKAGE UL, cUL 0 TRIGGER CURRENT, IFT (mA) 1.6 2 VO4158D VO4158H - SMD-6, option 7 - VO4158H-X007T VO4158M-X007T SMD-6, option 9 VO4158D-X009T - - 1.6 2 3 - VO4158H-X017T - DIP-6 VDE, UL, cUL SMD-6, option 7 Rev. 2.0, 19-Jan-2022 3 Document Number: 84634 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4158 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA Surge current IFSM Derate from 25 °C 2.5 A 1.33 mW/°C OUTPUT Peak off-state voltage VO4158D/H/M RMS on-state current VDRM 800 V ITM 300 mA 6.6 mW/°C Derate from 25 °C COUPLER Storage temperature range Tstg -55 to +150 °C Ambient temperature range Tamb -55 to +100 °C Tsld 260 °C Max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Soldering temperature Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. This phototriac should not be used to drive a load directly. It is intended to be a trigger device only 350 IL - Load Current (mA) 300 250 IF = 3 mA to 10 mA 200 150 100 50 0 -40 19623 -20 0 20 40 60 80 100 Tamb - Temperature (°C) Fig. 1 - Recommended Operating Condition Rev. 2.0, 19-Jan-2022 Document Number: 84634 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4158 www.vishay.com Vishay Semiconductors THERMAL CHARACTERISTICS PARAMETER SYMBOL VALUE UNIT LED power dissipation Pdiss 100 mW Output power dissipation Pdiss 500 mW Total power dissipation Ptot 600 mW Maximum LED junction temperature Tjmax. 125 °C Maximum output die junction temperature Tjmax. 125 °C Thermal resistance, junction emitter to board θJEB 150 °C/W Thermal resistance, junction emitter to case θJEC 139 °C/W Thermal resistance, junction detector to board θJDB 78 °C/W Thermal resistance, junction detector to case θJDC 103 °C/W Thermal resistance, junction emitter to junction detector θJED 496 °C/W TA θCA Package TC θEC θDC θDE TJD TJE θDB θEB TB θBA 19996 θCA Thermal resistance, case to ambient 3563 TA °C/W Note • The thermal characteristics table above were measured at 25 °C and the thermal model is represented in the thermal network below. Each resistance value given in this model can be used to calculate the temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal Characteristics of Optocouplers application note ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF - 1.2 1.4 V Reverse current VR = 6 V IR - 0.1 10 μA VF = 0 V, f = 1 MHz CI - 25 - pF Input capacitance OUTPUT Repetitive peak off-state voltage IDRM = 100 μA VDRM 800 - - V VD = VDRM, IF = 0 IDRM - - 100 μA On-state voltage IT = 300 mA VTM - - 3 V On-state current PF = 1, VT(RMS) = 1.7 V ITM - - 300 mA IF = 2 mA, VDRM IDINH - - 200 μA IH - - 500 μA VIH - - 20 V dV/dtcr 5000 - - V/μs Off-state current Off-state current in inhibit state VO4158D/H/M Holding current Zero cross inhibit voltage IF = rated IFT Critical rate of rise of off-state voltage VD = 0.67 VDRM, TJ = 25 °C COUPLER LED trigger current, current required to latch output VD = 3 V Common mode coupling capacitance Capacitance (input to output) f = 1 MHz, VIO = 0 V VO4158D IFT - - 1.6 mA VO4158H IFT - - 2 mA VO4158M IFT - - 3 mA CCM - 0.01 - pF CIO - 0.8 - pF Note • Minimum and maximum values were tested requirements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements Rev. 2.0, 19-Jan-2022 Document Number: 84634 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4158 www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER TEST CONDITION Climatic classification SYMBOL VALUE According to IEC 68 part 1 UNIT 55 / 100 / 21 Comparative tracking index CTI 175 VISO 4420 Maximum transient isolation voltage VIOTM 8000 Vpeak Maximum repetitive peak isolation voltage VIORM 890 Vpeak VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Output safety power PSO 500 mW Input safety current ISI 250 mA TS 175 °C ≥7 mm ≥7 mm ≥ 0.4 mm Maximum rated withstanding isolation voltage t = 1 min Isolation resistance Safety temperature Creepage distance Standard DIP-4 Clearance distance Standard DIP-4 Insulation thickness DTI VRMS Note • As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 IDRM - Leakage Current (nA) 1.5 VF (V) 1.3 1.1 0.9 0 °C 25 °C 50 °C 0.7 0.1 1 10 1000 100 10 IDRM at 800 V 1 -60 -40 -20 100 IF (mA) 19997 19592 Fig. 2 - Diode Forward Voltage vs. Forward Current 38 36 34 IR = 10 µA 32 -60 -40 -20 ITM - On-State Current (mA) VR (V) 40 60 80 100 1000 40 100 0 °C 10 25 °C 85 °C IF = 2 mA 1 0 20 40 60 80 100 Temperature (ºC) Fig. 3 - Diode Reverse Voltage vs. Temperature Rev. 2.0, 19-Jan-2022 20 Fig. 4 - Leakage Current vs. Ambient Temperature 42 19551 0 TA - Ambient Temperature (°C) 1 19541 2 3 4 VTM - On-State Voltage (V) Fig. 5 - On State Current vs. On State Voltage Document Number: 84634 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4158 Vishay Semiconductors 5500 1.6 5000 1.4 4500 85 °C 25 °C 4000 3500 0 °C 3000 2500 1.0 0.8 0.6 0.4 2000 0.2 1500 0.0 1000 0 100 200 300 400 500 600 700 800 900 -60 -40 -20 Applied Voltage(V) 19453 16 IFT - Trigger Current (mA) 18 1.6 Normalized IFT at 25 °C 1.2 1.0 0.8 0.6 0.4 0.2 5 25 45 65 60 80 100 12 10 85 ºC 100 ºC 8 6 4 -40 ºC 2 25 ºC 0 85 100 TA - Ambient Temperature (°C) 19454 40 14 0.0 -55 -35 -15 20 Fig. 9 - Normalized Holding Current vs. Temperature 1.8 1.4 0 Temperature (ºC) 19998 Fig. 6 - Output Off Current (Leakage) vs. Voltage IFT - Normalized Normalized IH at 25 °C 1.2 Normalized IH Leakage Current (nA) www.vishay.com 10 20 30 40 50 60 70 Trigger Pulse Width (µs) 20005 Fig. 7 - Normalized Trigger Input Current vs. Temperature Fig. 10 - IFT vs. LED Pulse Width 3.5 3.5 100 °C 3.0 3.0 85 °C 2.5 2.0 IFT (mA) IFT (mA) 2.5 1.5 1.0 2.0 25 °C 1.5 50 °C 1.0 0.5 0.5 0 10 19624 100 1000 Turn-On Time (µs) Fig. 8 - Trigger Current vs. Turn-On Time Rev. 2.0, 19-Jan-2022 0.0 0 21614 50 100 150 200 250 300 350 VRMS (V) Fig. 11 - IFT vs. VRMS and Temperature Document Number: 84634 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4158 www.vishay.com Vishay Semiconductors POWER FACTOR CONSIDERATIONS As a zero voltage crossing optotriac, the commutating dV/dt spikes can inhibit one half of the TRIAC from turning on. If the spike potential exceeds the inhibit voltage of the zero-cross detection circuit, half of the TRIAC will be held-off and not turn-on. This hold-off condition can be eliminated by using a capacitor or RC snubber placed directly across the power triac as shown in fig. 11. Note that the value of the capacitor increases as a function of the load current. R1 360 1 Hot 6 Control 2 5 3 4 U1 220/240 VAC RS ZC CS RG 330 Inductive load Nutral 21609-1 Fig. 12 - Basic Power Triac Driver Circuit The hold-off condition also can be eliminated by providing a higher level of LED drive current. The higher LED drive provides a larger photocurrent which causes the phototransistor to turn-on before the commutating spike has activated the zero-cross detection circuit. For example, if a device requires 1.5 mA for a resistive load, then 2.7 mA (1.8 times) may be required to control an inductive load whose power factor is less than 0.3. PACKAGE DIMENSIONS in millimeters 3 2 1 4 5 6 Pin one ID 6.30 6.50 ISO method A 8.50 8.70 7.62 typ. 1.22 1.32 1 min. 3.30 3.81 4° typ. 18° 0.84 typ. 0.46 0.51 3.30 3.81 3° to 9° 0.20 0.30 0.84 typ. 7.62 to 8.81 2.54 typ. i178014 Option 7 Option 9 7.62 typ. 10.3 max. 7.62 typ. 0.7 min. 4.3 ± 0.3 8 min. 0.1 ± 0.1 3.6 ± 0.3 0.6 min. 10.3 max. 0.6 min. 8 min. 0.76 2.54 R 0.25 0.76 2.54 R 0.25 1.78 8 min. 11.05 Rev. 2.0, 19-Jan-2022 1.52 1.78 8 min. 11.05 1.52 Document Number: 84634 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VO4158 www.vishay.com Vishay Semiconductors PACKAGE MARKING (example) VO4158 X017 V YWW 68 Notes • “YWW” is the date code marking (Y = year code, WW = week code) • VDE logo is only marked on option 1 parts. Tape and reel suffix (T) is not part of the package marking Rev. 2.0, 19-Jan-2022 Document Number: 84634 7 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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