VP0808B-E3

VP0808B/L/M, VP1008B/L/M P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (
) VGS(th) (V) ID (A) 5 @ VGS = –10 V –2 to –4.5 –0.88 5 @ VGS = –10 V –2 to –4.5 –0.28 VP0808M 5 @ VGS = –10 V –2 to –4.5 –0.31 VP1008B 5 @ VGS = –10 V –2 to –4.5 –0.79 5 @ VGS = –10 V –2 to –4.5 –0.28 5 @ VGS = –10 V –2 to –4.5 –0.31 VP0808B VP0808L –80 VP1008L –100 VP1008M Features Benefits Applications










Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Power Supply, Converter Circuits
Motor Control High-Side Switching Low On-Resistance: 2.5
Moderate Threshold: –3.4 V Fast Switching Speed: 40 ns Low Input Capacitance: 75 pF Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer TO-205AD (TO-39) (Case Drain) TO-226AA (TO-92) S TO-237 (Tab Drain) S 1 S 1 G 2 G 2 1 2 VP0808B VP1008B 3 G VP0808L VP1008L D D 3 VP0808M VP1008M 3 D Top View Top View Top View Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol VP0808Bb VP0808L VP0808M VP1008Bb VP1008L VP1008M Drain-Source Voltage VDS –80 –80 –80 –100 –100 –100 Gate-Source Voltage VGS
20
30
30
20
30
30 –0.88 –0.28 –0.31 –0.79 –0.28 –0.31 –0.53 –0.17 –0.20 –0.53 –0.17 –0.20 –3 Continuous Drain Current (TJ = 150C) Pulsed Drain =  = 

 Currenta Power Dissipation ID IDM =  = 

 PD Maximum Junction-to-Ambient RthJA Maximum Junction-to-Case RthJC Operating Junction and Storage Temperature Range TJ, Tstg –3 –3 –3 –3 –3 6.25 0.8 1 6.25 0.8 1 2.5 0.32 0.4 2.5 0.32 0.4 156 125 156 125 20 20 –55 to 150 Unit V A W C/W C Notes a. Pulse width limited by maximum junction temperature. b. Reference case for all temperature testing. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70218. Siliconix P-37655—Rev. B, 25-Jul-94 1 VP0808B/L/M, VP1008B/L/M Specificationsa Limits Parameter VP0808B/L/M VP1008B/L/M Min Symbol Test Conditions Typb Min V(BR)DSS VGS = 0 V, ID = –10 mA –110 –80 VGS(th) VDS = VGS, ID = –1 mA –3.4 –2 Max Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate Body Leakage Gate-Body IGSS V VDS = 0 V, VGS = "20 V TJ = 125
C VDS = –80 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS –100 –4.5 –2 "100 "100 "500 "500 On-State Drain ID(on) TJ = 125
C –500 VDS = –100 V, VGS = 0 V –10 mA –500 VDS = –15 V, VGS = –10 V –2 VGS = –10 V, ID = –1 A 2.5 5 5 4.4 8 8 Drain Source On-Resistance Drain-Source On Resistancec rDS(on) DS( ) Forward Transconductance c gfs VDS = –10 V, ID = –0.5 A 325 Common Source Output Conductancec gos VDS = –7.5 V, ID = –0.1 A 0.45 TJ = 125
C nA –10 TJ = 125
C Currentc –4.5 –1.1 –1.1 200 A W 200 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –25 25 V, V VGS = 0 V f = 1 MHz 75 150 150 40 60 60 18 25 25 pF Switchingd Turn On Time Turn-On Turn-Off Time td(on) tr td(off) VDD = –25 V, RL = 47 W ID ^ –0.5 –0 5 A, A VGEN = -10 V RG = 25 W tf Notes a. TA = 25
C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. 2 11 15 15 30 40 40 20 30 30 20 30 30 ns VPDV10 Siliconix P-37655—Rev. B, 25-Jul-94 VP0808B/L/M, VP1008B/L/M Typical Characteristics (25
C Unless Otherwise Noted) Ohmic Region Characteristics Output Characteristics for Low Gate Drive –2.0 –20 TJ = 25
C –1.6 VGS = –4.0 V –16 –9 V I D – Drain Current (mA) I D – Drain Current (A) TJ = 25
C VGS = –10 V –8 V –1.2 –7 V –0.8 –6 V –12 –3.8 V –8 –3.6 V –4 –0.4 –5 V –3.2 V –3.4 V –4 V 0 0 0 –1 –2 –3 –4 0 –5 –0.4 VDS – Drain-to-Source Voltage (V) –1.6 –2.0 On-Resistance vs. Gate-to-Source Voltage 7 TJ = 25
C TJ = –55
C 6 rDS(on) – On-Resistance (

25
C –0.4 I D – Drain Current (A) –1.2 VDS – Drain-to-Source Voltage (V) Transfer Characteristics –0.5 –0.8 125
C VDS = –10 V –0.3 –0.2 –0.1 I D = 0.1 A 5 4 0.5 A 3 1.0 A 2 1 0 0 rDS(on) – Drain-Source On-Resistance (

10 –2 –4 –6 –8 –10 0 –4 –8 –12 –16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 2.00 rDS(on) – Drain-Source On-Resistance (Normalized) 0 8 6 4 VGS = –10 V 2 0 1.75 –20 VGS = –10 V ID = 0.5 A 1.50 1.25 1.00 0.75 0.50 0 –0.5 –1.0 –1.5 –2.0 ID – Drain Current (A) Siliconix P-37655—Rev. B, 25-Jul-94 –2.5 –3.0 –50 –10 30 70 110 150 TJ – Junction Temperature (
C) 3 VP0808B/L/M, VP1008B/L/M Typical Characteristics (25
C Unless Otherwise Noted) Threshold Region –10 Capacitance 200 VGS = 0 V f = 1 MHz VDS = –5 V C – Capacitance (pF) I D – Drain Current (mA) 160 TJ = 150
C –1 25
C 125
C –55
C –0.1 120 Ciss 80 Coss Crss 40 –0.01 –1.0 0 –1.5 –2.0 –2.5 –3.0 –4.0 –3.5 0 –4.5 –30 –40 –50 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Gate Charge Drive Resistance Effects on Switching –15.0 100 tr ID = –0.5 A –12.5 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) –20 –10 –10.0 VDS = –50 V –7.5 –80 V –5.0 tf td(off) 10 td(on) VDD = –25 V RL = 50
VGS = 0 to –10 V ID = –500 mA –2.5 0 1 0 100 200 300 400 500 10 Qg – Total Gate Charge (pC) 20 50 100 RG – Gate Resistance (
) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 Single Pulse t1 t2 2. Per Unit Base = RthJA = 156
C/W 3. TJM – TA = PDMZthJA(t) 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) 4 Siliconix P-37655—Rev. B, 25-Jul-94