VQ1001P

VQ1001J/P Vishay Siliconix Quad N-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Direct Logic-Level Interface: TTL/CMOS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays VQ1001J 30 Low On-Resistance: 0.85 W Low Threshold: 1.4 V Low Input Capacitance: 38 pF Fast Switching Speed: 9 ns Low Input and Output Leakage Low Offset Voltage Low-Voltage Operation Easily Driven Without Buffer High-Speed Circuits Low Error Voltage Dual-In-Line N D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 4 11 G2 5 10 G3 S2 6 9 S3 D2 7 8 D3 NC N Device Marking Top View N VQ1001J “S” fllxxyy VQ1001P “S” fllxxyy NC “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code N Top View Plastic: VQ1001J Sidebraze: VQ1001P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage VQ1001J Symbol Single VDS 30 VGS VQ1001P Continuous Drain Current (TJ = 150_C) _ TA= 25_C TA= 100_C Pulsed Drain Currenta Power Dissipation (Single) Thermal Resistance, Junction-to-Ambient (Single) Operating Junction and Storage Temperature Range TA= 100_C "30 Unit V "20 0.83 ID IDM TA= 25_C Total Quad PD RthJA TJ, Tstg 0.53 A 3 1.3 2 0.52 0.8 96 62.5 –55 to 150 W _C/W _C Notes a. Pulse width limited by maximum junction temperature. Document Number: 70219 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-1 VQ1001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typa V(BR)DSS VGS = 0 V, ID = 10 mA 30 45 VGS(th) VDS = VGS, ID = 1 mA 0.8 1.5 Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage VDS = 0 V, VGS = "16 V Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Drain-Source On-Resistanceb "500 TJ = 125_C VDS = 30 V, VGS = 0 V 10 VDS = 24 V, VGS = 0 V, TJ = 125_C 500 VDS = 10 V, VGS = 12 V rDS(on) gfs 2 3.5 1.2 1.75 VGS = 12 V, ID = 1 A 0.8 1 1.5 2 200 nA m mA A VGS = 5 V, ID = 0.2 A VDS = 10 V, ID = 0.5 A V "100 TJ = 125_C Forward Transconductanceb 2.5 500 W mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 38 110 33 110 8 35 9 30 14 30 pF Switchingc Turn-On Time tON Turn-Off Time tOFF VDD = 15 V, RL = 23 W, ID ^ 0.6 A VGEN = 10 V, RG = 25 W Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VNDQ03 Document Number: 70219 S-04279—Rev. D, 16-Jul-01 VQ1001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Ohmic Region Characteristics 2.0 7V VGS = 10 V Output Characteristics for Low Gate Drive 200 VGS = 10 V 6V 160 ID – Drain Current (mA) 1.6 ID – Drain Current (A) 2.9 V 5V 1.2 0.8 4V 0.4 2.7 V 120 2.5 V 80 2.3 V 40 3V 2.1 V 1.7 V 2V 0 0 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0 VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 500 rDS(on) – On-Resistance ( Ω ) ID – Drain Current (mA) 3 VDS = 15 V 400 300 200 TJ = 125_C 25_C 100 ID = 0.2 A 0.5 A 2 1.0 A 1 –55_C 0 0 1 2 3 4 4 8 12 16 VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V) On-Resistance vs. Drain Current Normalized On-Resistance vs. Junction Temperature 2.5 rDS(on) – Drain-Source On-Resistance ( Ω ) 0 5 rDS(on) – Drain-Source On-Resistance ( Ω ) (Normalized) 0 2.0 VGS = 4.5 V 6V 1.5 10 V 1.0 0.5 20 2.25 2.00 VGS = 10 V 1.75 ID = 0.5 A 1.50 0.1 A 1.25 1.00 0.75 0 0.50 0 0.5 1.0 1.5 2.0 ID – Drain Current (A) Document Number: 70219 S-04279—Rev. D, 16-Jul-01 2.5 3.0 –50 –10 30 70 110 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 VQ1001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region Capacitance 10 120 VDS = 10 V C – Capacitance (pF) TJ = 150_C ID – Drain Current (mA) VGS = 0 V f = 1 MHz 100 1 100_C 25_C 0.1 80 60 40 Ciss Coss 20 Crss –55_C 0.01 0.6 0 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 10 VGS – Gate-to-Source Voltage (V) Gate Charge 50 VDD = 25 V RG = 25 W VGS = 0 to 10 V 5 4 t – Switching Time (ns) VGS – Gate-to-Source Voltage (V) 40 Load Condition Effects on Switching ID = 1 A VDS = 15 V 3 24 V 2 10 td(off) td(on) tf tr 1 1 0.1 0 0 80 160 240 320 400 1 Qg – Total Gate Charge (pC) 10 ID – Drain Current (A) Drive Resistance Effects on Switching Transconductance 500 100 TJ = –55_C VDD = 25 V RL = 24 W VGS = 0 to 10 V ID = 1 A 25_C gfs – Forward Transconductance (µS) t – Switching Time (ns) 30 100 6 td(off) 10 td(on) tf tr 400 150_C 300 200 VDS = 7.5 V 300 ms, 1% Duty Cycle Pulse Test 100 0 1 10 50 RG – Gate Resistance ( W) www.vishay.com 11-4 20 VDS – Drain-to-Source Voltage (V) 100 0 100 200 300 400 500 ID – Drain Current (mA) Document Number: 70219 S-04279—Rev. D, 16-Jul-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1