VQ2001P

VP0300L/LS, VQ2001J/P Vishay Siliconix P-Channel 30-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VP0300L 2.5 @ VGS = –12 V –2 to –4.5 –0.32 VP0300LS 2.5 @ VGS = –12 V –2 to –4.5 –0.5 2 @ VGS = –12 V –2 to –4.5 –0.6 2 @ VGS = –12 V –2 to –4.5 –0.6 –30 VQ2001J VQ2001P FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Power Supply, Converter Circuits D Motor Control High-Side Switching Low On-Resistance: 1.5 W Moderate Threshold: –3.1 V Fast Switching Speed: 17 ns Low Input Capacitance: 60 pF TO-226AA (TO-92) S G D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Switching Easily Driven Without Buffer Dual-In-Line TO-92S (Copper Lead Frame) 1 2 G 2 D 3 P 1 S 3 P D1 1 14 D4 S1 2 13 S4 G1 3 12 G4 NC 4 11 NC G2 5 10 G3 S2 6 9 S3 8 D3 D2 Top View Top View VP0300L VP0300LS 7 P P Top View Plastic: VQ2001J Sidebraze: VQ2001P For device marking, see the last page of this data sheet. ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) VQ2001J/P Symbol VP0300L VP0300LS Single Total Quad Drain-Source Voltage VDS –30 –30 –30 –30 Gate-Source Voltage VGS "20 "20 "20 "20 Parameter Continuous Drain Current (TJ = 150_C) TA= 25_C ID TA= 100_C Pulsed Drain Currenta Power Dissipation IDM TA= 25_C PD TA= 100_C Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range RthJA TJ, Tstg –0.32 –0.5 –0.6 –0.6 –0.2 –0.32 –0.37 –0.37 –2.4 –3 –2 –2 0.8 0.9 1.3 2 0.32 0.4 0.52 0.8 156 139 96 62.5 –55 to 150 Unit V A W _C/W _C Notes a. Pulse width limited by maximum junction temperature. For applications information see AN804. Document Number: 70217 S-04279—Rev. E, 16-Jul-01 www.vishay.com 11-1 VP0300L/LS, VQ2001J/P Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits VP0300L/LS Parameter Symbol Test Conditions Typa Min Max VQ2001J/P Min Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage V(BR)DSS VGS = 0 V, ID = –10 mA –55 –30 VGS(th) VDS = VGS, ID = –1 mA –3.1 –2 –30 –4.5 –2 TJ = 125_C IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) VDS = 0 V, VGS = "20 V "100 VDS = –24 V, VGS = 0 V –10 –500 TJ = 125_C VDS = –30 V, VGS = 0 V Drain-Source On-Resistanceb rDS(on) "500 nA –500 mA –10 VDS = –10 V, VGS = –12 V –2.8 VGS = –12 V, ID = –1 A 1.5 2.5 2 2.6 3.6 3.6 TJ = 125_C V "100 VDS = 0 V, VGS = "16 V Gate-Body Leakage –4.5 Forward Transconductanceb gfs VDS = –10 V, ID = –0.5 A 370 Common Source Output Conductanceb gos VDS = –7.5 V, ID = –0.05 A 0.25 –1.5 –1.5 200 A W 200 mS Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 60 150 150 40 100 100 10 60 60 VDD = –25 V, RL = 23 W ID ^ –1 A, VGEN = –10 V RG = 25 W 19 30 17 30 VDD =–15 V, RL = 23 W ID ^ –0.6 A, VGEN = –10 V RG = 25 W 19 30 16 30 VDS = –15 V, VGS = 0 V f = 1 MHz pF Switchingc Turn-On Time tON Turn-Off Time tOFF Turn-On Time tON Turn-Off Time tOFF Notes a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW v300 ms duty cycle v2%. c. Switching time is essentially independent of operating temperature. www.vishay.com 11-2 ns VPEA03 Document Number: 70217 S-04279—Rev. E, 16-Jul-01 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics Transfer Characteristics –2.0 VGS = –10 V –9 V –1000 –8 V –800 ID – Drain Current (A) –1.2 –7 V –0.8 –6 V –0.4 –5 V ID – Drain Current (mA) 125_C –1.6 TJ = –55_C 25_C –600 –400 –200 –4 V 0 0 0 –1 –2 –3 –4 –5 0 –2 VDS – Drain-to-Source Voltage (V) –4 Capacitance –10 Gate Charge VGS – Gate-to-Source Voltage (V) VGS = 0 V f = 1 MHz 150 C – Capacitance (pF) –8 –18 175 125 100 75 Ciss 50 Coss 25 Crss –15 VDS = –15 V ID = –1 A –12 VDS = –24 V ID = –1 A –9 –6 –3 0 0 0 –5 –10 –15 –20 –25 0 –30 1000 2000 3000 4000 5000 Qg – Total Gate Charge (pC) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage –10 K 1.65 TJ = 150_C 1.50 TJ = 25_C –1 K IS – Source Current (A) rDS(on) – On-Resistance ( Ω ) (Normalized) –6 VGS – Gate-to-Source Voltage (V) VGS = –4.5 V ID = –0.5 A 1.35 1.20 VGS = –10 V ID = –0.1 A 1.05 –100 –10 0.90 0.75 –50 –1 –25 0 25 50 75 100 TJ – Junction Temperature (_C) Document Number: 70217 S-04279—Rev. E, 16-Jul-01 125 150 0 –0.5 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VSD – Source-to-Drain Voltage (V) www.vishay.com 11-3 VP0300L/LS, VQ2001J/P Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Threshold Region On-Resistance vs. Gate-to-Source Voltage –10 K 3.0 VDS = –10 V 2.5 TJ = 150_C –1 K ID – Drain Current (µA) rDS(on) – On-Resistance ( Ω ) ID = –0.5 A 2.0 ID = –0.2 A 1.5 100_C 25_C –100 –10 –55_C 1.0 –1 0 0 –4 –8 –12 –16 –1.0 –20 –1.5 –2.0 –2.5 –3.0 –3.5 –4.0 VGS – Gate-Source Voltage (V) VGS – Gate-to-Source Voltage (V) THERMAL RATINGS Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA, VP0300L Only) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 t1 – Square Wave Pulse Duration (sec) 1K 10 K DEVICE MARKINGS Front View: VP0300L “S” VP 0300L xxyy VP0300LS “S” VP 0300LS xxyy www.vishay.com 11-4 Top View: VQ2001J VQ2001J “S”f//xxyy VP0300LS “S” = Siliconix Logo f = Factory Code ll = Lot Traceability xxyy = Date Code VQ2001P “S”f//xxyy Document Number: 70217 S-04279—Rev. E, 16-Jul-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1