VS-100BGQ030HF4
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Vishay Semiconductors
High Performance Schottky Rectifier, 100 A
FEATURES
Cathode
•
•
•
•
•
Anode
PowerTab®
150 °C max. operating junction temperature
High frequency operation
Ultralow forward voltage drop
Continuous high current operation
Guard ring for enhanced ruggedness and long
term reliability
• Screw mounting only
• AEC-Q101 qualified
• PowerTab® package
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
PowerTab®
IF(AV)
100 A
DESCRIPTION
VR
30 V
VF at IF
0.56 V
The VS-100BGQ030HF4 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
low voltage output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
IRM
460 mA at 125 °C
TJ max.
150 °C
Diode variation
Single die
EAS
9 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
Rectangular waveform
CHARACTERISTICS
100
A
TC
106
°C
30
V
tp = 5 μs sine
4500
A
100 Apk (typical)
0.49
V
TJ
150
°C
-55 to +150
°C
VS-100BGQ030HF4
UNITS
30
V
VRRM
IFSM
VF
TJ
Range
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
100
A
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 8 A, L = 1.12 mH
36
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
8
A
Repetitive avalanche current
50 % duty cycle at TC = 106 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
VRRM applied
4500
A
850
Revision: 15-Jun-15
Document Number: 93802
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ030HF4
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
50 A
VFM (1)
Forward voltage drop
TJ = 25 °C
100 A
50 A
TJ = 150 °C
100 A
IRM (1)
Reverse leakage current
0.5
0.56
0.63
0.36
0.4
0.49
0.56
80
160
TJ = 150 °C, VR = 30 V
800
1100
TJ = 25 °C
0.6
2.4
VR = Rated VR
TJ = 125 °C
260
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance
LS
Measured from tab to mounting plane
dV/dt
MAX.
0.47
TJ = 125 °C, VR = 15 V
Maximum junction capacitance
Maximum voltage rate of change
TYP.
Rated VR
UNITS
V
mA
460
3800
pF
3.5
nH
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-55 to +150
°C
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.50
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.30
°C/W
Approximate weight
Mounting torque
g
0.18
oz.
minimum
1.2 (10)
N·m
maximum
2.4 (20)
(lbf · in)
Case style PowerTab®
Marking device
100BGQ030H
1000
1000
150 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
5
TJ = 150 °C
100
10
TJ = 125 °C
TJ = 25 °C
100
125 °C
100 °C
10
75 °C
50 °C
1
25 °C
0.1
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
10
15
20
25
30
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 15-Jun-15
Document Number: 93802
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ030HF4
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
0
5
10
15
20
25
30
35
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
100
140
120
Average Power Loss (W)
Allowable Case Temperature (°C)
160
DC
100
80
Square wave (D = 0.50)
80 % rated VR applied
60
180°
120°
90°
60°
30°
80
60
RMS Limit
DC
40
20
see note (1)
0
40
0
20
40
60
80
100
120
140
160
0
30
60
90
120
150
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Revision: 15-Jun-15
Document Number: 93802
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ030HF4
IFSM - Non Repetitive Surge Current (A)
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Vishay Semiconductors
10 000
L
High-speed
switch
IRFP460
D.U.T.
Freewheel
diode
Rg = 25 Ω
1000
Current
monitor
+ Vd = 25
40HFL40S02
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
Fig. 8 - Unclamped Inductive Test Circuit
100
10
100
1000
10 000
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 %
rated VR
tp - Square Wave Pulse Duration (μs)
Fig. 7 - Maximum Non-Repetitive Surge Current
ORDERING INFORMATION TABLE
Device code
VS-
100 BGQ 030
1
2
3
4
H
F4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (100 = 100 A)
3
-
Essential part number
4
-
Voltage rating (030 = 30 V)
5
-
H = AEC-Q101 qualified
6
-
Environmental digit:
-
F4 = RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-100BGQ030HF4
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
375
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
www.vishay.com/doc?95467
Application note
www.vishay.com/doc?95179
Revision: 15-Jun-15
Document Number: 93802
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
PowerTab®
15.90 (0.62)
15.60 (0.61)
11.90 (0.47)
12.40 (0.49)
Lead 1
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
4.95 (0.19)
4.75 (0.18)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.20 (0.20)
4.95 (0.19)
3.15 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
5.45 REF.
(0.21 REF.)
39.95 (1.57)
39.55 (1.56)
“G” see note
27.65 (1.08)
27.25 (1.07)
15.60 (0.61)
14.80 (0.58)
1.35 (0.05)
1.20 (0.04)
18.50 (0.73)
17.85 (0.70)
4.70 (0.19)
4.50 (0.18)
8.80 (0.35)
8.20 (0.32)
DIMENSIONS in millimeters (inches)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Note:
Outline conform to JEDEC® TO-275, except for dimension “G” only
Revision: 10-Jun-2021
Document Number: 95240
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Revision: 01-Jan-2022
1
Document Number: 91000
