VS-100BGQ045HF4
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Vishay Semiconductors
High Performance Schottky Rectifier, 100 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
Cathode
• Ultralow forward voltage drop
• Continuous high current operation
• Guard ring for enhanced ruggedness and
long term reliability
Anode
PowerTab®
• Screw mounting only
• AEC-Q101 qualified
PRODUCT SUMMARY
• PowerTab® package
Package
PowerTab®
IF(AV)
100 A
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VR
45 V
VF at IF
0.71 V
IRM
320 mA at 125 °C
DESCRIPTION
TJ max.
150 °C
Diode variation
Single die
EAS
40 mJ
The VS-100BGQ045HF4 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
low voltage output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
Rectangular waveform
100
A
TC
97
°C
45
V
tp = 5 μs sine
4400
A
100 Apk (typical)
0.65
V
TJ
150
°C
-55 to +150
°C
100BGQ045
UNITS
45
V
VRRM
IFSM
VF
TJ
UNITS
Range
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
IF(AV)
TEST CONDITIONS
50 % duty cycle at TC = 97 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
VRRM applied
VALUES
UNITS
100
A
4400
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 6 A, L = 2 mH
40
mJ
Repetitive avalanche current
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
6
A
10 ms sine or 6 ms rect. pulse
A
830
Revision: 16-Jun-15
Document Number: 93998
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ045HF4
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
50 A
VFM (1)
Forward voltage drop
TJ = 25 °C
100 A
50 A
TJ = 150 °C
100 A
TJ = 150 °C, VR = 45 V
IRM (1)
Reverse leakage current
TJ = 25 °C
VR = Rated VR
TJ = 125 °C
Maximum junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C
Typical series inductance
LS
Measured from tab to mounting plane
Maximum voltage rate of change
dV/dt
Rated VR
TYP.
MAX.
0.54
0.58
0.69
0.77
0.48
0.52
0.65
0.71
600
1000
0.3
1
180
320
UNITS
V
mA
2700
pF
3.5
nH
10 000
V/μs
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
-55 to +150
°C
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.50
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
0.30
°C/W
Approximate weight
Mounting torque
Marking device
5
g
0.18
oz.
minimum
1.2 (10)
N·m
maximum
2.4 (20)
(lbf · in)
Case style PowerTab®
100BGQ045H
Revision: 16-Jun-15
Document Number: 93998
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ045HF4
Vishay Semiconductors
1000
1000
150 °C
TJ = 150 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
www.vishay.com
100
10
TJ = 125 °C
TJ = 25 °C
1
100
125 °C
100 °C
10
75 °C
50 °C
1
25 °C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2 1.4
1.6
0
1.8
5
10
15
20
25
30
35
40
45
VR - Reverse Voltage (V)
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
10 000
TJ = 25 °C
1000
100
01020304050
VR - Reverse Voltage (V)
Fig. 1 - - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1
D = 0.75
D = 0.5
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics
Revision: 16-Jun-15
Document Number: 93998
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ045HF4
Vishay Semiconductors
180
120
160
100
140
Average Power Loss (W)
Allowable Case Temperature (°C)
www.vishay.com
DC
120
100
Square wave (D = 0.50)
80 % rated Vr applied
80
180°
120°
90°
60°
30°
80
RMS Limit
60
DC
40
20
see note (1)
0
60
0
20
40
60
80
100
120
140
160
0
IF(AV) - Average Forward Current (A)
30
90
120
150
IF(AV) - Average Forward Current (A)
Fig. 4 - Maximum Allowable Case Temperature vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
60
Fig. 5 - Forward Power Loss Characteristics
10 000
1000
At Any Rated Load Condition
And With Rated VRRM Applied
Following Surge
100
10
100
1000
10 000
t - Square Wave Pulse Duration (μs)
Fig. 6 - Maximum Non-Repetitive Surge Current
L
D.U.T.
IRFP460
Rg = 25 Ω
Current
monitor
High-speed
switch
Freewheel
diode
+ Vd = 25 V
40HFL40S02
Fig. 7 - Unclamped Inductive Test Circuit
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 16-Jun-15
Document Number: 93998
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100BGQ045HF4
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
100 BGQ 045
1
2
3
4
H
F4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating (100 = 100 A)
3
-
Essential part number
4
-
Voltage rating (045 = 45 V)
5
-
H = AEC-Q101 qualified
6
-
Environmental digit:
F4 = RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-100BGQ045HF4
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
375
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95240
Part marking information
www.vishay.com/doc?95467
Application note
www.vishay.com/doc?95179
Revision: 16-Jun-15
Document Number: 93998
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
PowerTab®
15.90 (0.62)
15.60 (0.61)
11.90 (0.47)
12.40 (0.49)
Lead 1
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
Lead 2
4.95 (0.19)
4.75 (0.18)
Ø 4.20 (Ø 0.16)
Ø 4.00 (Ø 0.15)
5.20 (0.20)
4.95 (0.19)
3.15 (0.12)
3.00 (0.11)
0.60 (0.02)
0.40 (0.01)
5.45 REF.
(0.21 REF.)
39.95 (1.57)
39.55 (1.56)
“G” see note
27.65 (1.08)
27.25 (1.07)
15.60 (0.61)
14.80 (0.58)
1.35 (0.05)
1.20 (0.04)
18.50 (0.73)
17.85 (0.70)
4.70 (0.19)
4.50 (0.18)
8.80 (0.35)
8.20 (0.32)
DIMENSIONS in millimeters (inches)
1.30 (0.05)
1.10 (0.04)
12.20 (0.48)
12.00 (0.47)
Lead assignments
Lead 1 = Cathode
Lead 2 = Anode
Note:
Outline conform to JEDEC® TO-275, except for dimension “G” only
Revision: 10-Jun-2021
Document Number: 95240
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000