VS-100BGQ100

VS-100BGQ100 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 100 A FEATURES • 175 °C max. operating junction temperature • High frequency operation Cathode Anode • Low forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long term reliability PowerTab® • Screw mounting only • Designed and qualified according to JEDEC®-JESD 47 PRIMARY CHARACTERISTICS • PowerTab® package IF(AV) 100 A VR 100 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VF at IF 0.82 V IRM 180 mA at 125 °C EAS 9 mJ TJ max. 175 °C Package PowerTab® Circuit configuration Single DESCRIPTION The VS-100BGQ100 Schottky rectifier has been optimized for low reverse leakage at high temperature.  The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VALUES UNITS Rectangular waveform CHARACTERISTICS 100 A TC 124 °C 100 V tp = 5 μs sine 6300 A 100 Apk (typical) 0.77 V TJ 125 °C -55 to +175 °C 100BGQ100 UNITS 100 V VRRM IFSM VF TJ Range VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at TC = 124 °C, rectangular waveform 100 A 5 μs sine or 3 μs rect. pulse 6300 Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 2 A, L = 4.5 mH 9 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied A 800 Revision: 16-Jan-2019 Document Number: 94581 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL 50 A VFM (1) Forward voltage drop IRM (1) TYP. TJ = 25 °C 100 A 50 A TJ = 125 °C 100 A Reverse leakage current VALUES TEST CONDITIONS TJ = 25 °C Maximum junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C Typical series inductance LS Measured from tab to mounting plane Maximum voltage rate of change dV/dt 0.83 0.86 1.01 1.08 0.66 0.7 0.77 0.82 22 300 μA 14 18 mA VR = Rated VR TJ = 125 °C UNITS MAX. Rated VR V 1320 pF 3.5 nH 10 000 V/μs Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS -55 to +175 °C Maximum junction and storage temperature range TJ, TStg Maximum thermal resistance,  junction to case RthJC DC operation 0.50 Typical thermal resistance,  case to heatsink RthCS Mounting surface, smooth and greased 0.30 °C/W 5 g 0.18 oz. minimum 1.2 (10) maximum 2.4 (20) N·m (lbf · in) Approximate weight Mounting torque Case style PowerTab® 1000 Tj = 175 °C 100 10 Tj = 125 °C Tj = 25 °C 1 0.0 100BGQ100 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Marking device 175°C 100 150°C 10 125°C 100°C 1 75°C 0.1 50°C 0.01 25°C 0.001 0.0001 0.5 1.0 1.5 2.0 0 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jan-2019 Document Number: 94581 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 D = 0.2 0.1 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) 180 120 160 100 140 Average Power Loss (W) Allowable Case Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics DC 120 100 Square wave (D = 0.50) 80 % rated VR applied 80 180° 120° 90° 60° 30° 80 RMS Limit 60 DC 40 20 see note (1) 0 60 0 20 40 60 80 100 120 140 160 0 30 60 90 120 150 IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 16-Jan-2019 Document Number: 94581 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-100BGQ100 IFSM - Non-Repetitive Surge Current (A) www.vishay.com Vishay Semiconductors 10 000 1000 At Any Rated Load Condition And With Rated VRRM Applied Following Surge 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (μs) Fig. 7 - Maximum Non-Repetitive Surge Current L High-speed switch IRFP460 D.U.T. Freewheel diode Rg = 25 Ω Current monitor + Vd = 25 V 40HFL40S02 Fig. 8 - - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR ORDERING INFORMATION TABLE Device code VS- 100 BGQ 100 1 2 3 4 1 - Vishay Semiconductors product 2 - Current rating 3 - Essential part number 4 - Voltage code = VRRM LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 SPICE model www.vishay.com/doc?96588 Revision: 16-Jan-2019 Document Number: 94581 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® 15.90 (0.62) 15.60 (0.61) 11.90 (0.47) 12.40 (0.49) Lead 1 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 4.95 (0.19) 4.75 (0.18) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.20 (0.20) 4.95 (0.19) 3.15 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 5.45 REF. (0.21 REF.) 39.95 (1.57) 39.55 (1.56) “G” see note 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 18.50 (0.73) 17.85 (0.70) 4.70 (0.19) 4.50 (0.18) 8.80 (0.35) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Note: Outline conform to JEDEC® TO-275, except for dimension “G” only Revision: 10-Jun-2021 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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