VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
MTP PressFit Power Module
Three Phase Bridge, 45 A to 100 A
FEATURES
• Low VF
• Low profile package
• Direct mounting to heatsink
• PressFit pins technology
• Low junction to case thermal resistance
• 3500 VRMS insulation voltage
• Designed and qualified for industrial level
• PressFit pins locking technology
PATENT(S): www.vishay.com/patents
• UL approved file E78996
MTP PressFit
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
IO
45 A to 100 A
VRRM
1600 V
Package
MTP PressFit
Circuit configuration
Three phase bridge
• Power conversion machines
• Welding
• UPS
• SMPS
• Motor drives
• General purpose and heavy duty application
DESCRIPTION
The new MTP module is easy to use thanks to solder less
method for contacting PressFit pins to the PCB. The low
profile package has been specifically conceived to
maximize space saving and optimize the electrical layout of
the application specific power supplies.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
CHARACTERISTICS
VALUES
100MT
UNITS
45
75
100
A
°C
TC
100
80
80
270
380
450
60 Hz
280
398
470
50 Hz
365
724
1013
60 Hz
325
660
920
3650
7240
10 130
1600
VRRM
TJ
VALUES
70MT
50 Hz
I2t
TStg
VALUES
40MT
Range
- 40 to + 150
- 40 to + 150
A
A2s
A2s
V
°C
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and international patents.
Revision: 22-May-2019
Document Number: 94870
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE CODE
REVERSE VOLTAGE
V
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
160
1600
VS-40MT160P-P, VS-70MT160P-P,
VS-100MT160P-P
VRSM, MAXIMUM
IRRM MAXIMUM AT
NON-REPETITIVE PEAK
TJ = 150 °C
V
mA
1700
5
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum DC output
current at case temperature
IO
TEST CONDITIONS
Maximum peak, one cycle
forward, non-repetitive on
state surge current
IFSM
No voltage
reapplied
t = 8.3 ms
t = 10 ms
100 % VRRM
reapplied
t = 8.3 ms
t = 10 ms
Maximum
I2t
I2t
for fusing
No voltage
reapplied
t = 8.3 ms
t = 10 ms
I2t
Value of threshold voltage
VF(TO)
Slope resistance
rt
Initial
TJ = TJ maximum
100
A
°C
100
80
80
270
380
450
280
398
470
225
320
380
240
335
400
365
724
1013
325
660
920
253
512
600
240
467
665
t = 0.1 ms to 10 ms, no voltage reapplied
3650
7240
10 130
TJ maximum
VFM
TJ = 25 °C; tp = 400 μs single junction
(40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A)
SYMBOL
TEST CONDITIONS
Maximum forward voltage
drop
75
100 % VRRM
reapplied
t = 8.3 ms
Maximum I2t for fusing
45
120° rect. to conduction angle
t = 10 ms
VALUES VALUES VALUES
UNITS
40MT
70MT
100MT
A2s
A2s
0.78
0.82
0.75
V
14.8
9.5
8.1
m
1.45
1.45
1.51
V
INSULATION TABLE
PARAMETER
RMS insulation voltage
VINS
VALUES VALUES VALUES
UNITS
40MT
70MT
100MT
TJ = 25 °C, all terminal shorted, f = 50 Hz, t = 1 s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance, case to
heatsink per module
Mounting torque to heatsink± 10 %
Approximate weight
SYMBOL
TEST CONDITIONS
VALUES VALUES VALUES
UNITS
40MT
70MT
100MT
TJ
- 40 to + 150
TStg
- 40 to + 150
RthJC
RthCS
°C
DC operation per module
0.27
0.23
DC operation per junction
1.6
1.38
1.14
120° rect. conduction angle per module
0.38
0.29
0.22
120° rect. conduction angle per junction
2.25
1.76
1.29
Mounting surface smooth, flat and greased
heatsink compound thermal conductivity
= 0.42 W/mK
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound. Lubricated threads
0.19
K/W
0.1
4
Nm
65
g
Revision: 22-May-2019
Document Number: 94870
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
CLEARANCE AND CREEPAGE DISTANCES
PARAMETER
TEST CONDITIONS
MTP PressFit
Creepage distance
Shortest distance along external surface of the insulating material
between terminals which are not internally short circuited together
40MT...P
R thJC (DC) = 0.27 K/W
Per Module
150
140
130
120
120 ˚
(Rect)
110
100
90
80
0
10
20
30
40
50
Total Output Current (A)
Peak Half Sine Wave On-State Current (A)
160
250
300
Instantaneous On-State Current (A)
TJ = 25 ˚C
TJ = 150 ˚C
100
10
40MT...P
1
0
1
2
3
4
5
6
Instantaneous On-State Voltage (V)
Fig. 2 - On-State Voltage Drop Characteristics
mm
13
At any rated load condition and with
rated VRRM applied following surge.
Initial Tj = 150 ˚ C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
200
150
100
40MT...P
Per Junction
50
1
10
100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 3 - Maximum Non-Repetitive Surge Current
Fig. 1 - Current Rating Characteristics
1000
UNITS
10.2
Peak Half Sine Wave On-State Current (A)
Maximum Allowable Case Temperature (°C)
Clearance
External shortest distances in air between terminals
which are not internally short circuited together
Maximum non repetitive surge current
vs. pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 150 ˚ C
No voltage reapplied
Rated VRRM reapplied
250
200
150
100
40MT...P
Per Junction
50
0.01
0.1
1
Pulse Train Duration(s)
Fig. 4 - Maximum Non-Repetitive Surge Current
Revision: 22-May-2019
Document Number: 94870
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
250
1
0.
=
A
hS
Rt
W
K/
200
2
0.
Tj = 150˚C
0.
3
K
0.5 /W
K/
W
0.4
K/
W
a
elt
-D
R
120˚
(Rect)
150
W
K/
Maximum Total Power Loss (W)
40MT...P
1K
/W
100
50
0
0
10
20
30
40
Total Output Current (A)
50
0
30
60
90
120
150
60
Maximum Allowable Ambient Temperature (°C)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink)
160
70MT...P
R thJC (DC) = 0.23 K/W
Per Module
150
140
130
120
110
120˚
(Rect)
100
90
80
70
60
0
350
300
250
200
150
1
Tj = 150˚C
100
10
70MT...P
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Fig. 8 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Instantaneous On-state Current (A)
Tj = 25˚C
10
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Total Output Current (A)
1000
70MT...P
Per Junction
100
10 20 30 40 50 60 70 80
Fig. 6 - Current Rating Characteristics
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 150˚C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
400
350
300
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T j = 150˚C
No Voltage Reapplied
Rated V rrm Reapplied
250
200
150
100
70MT...P
Per Junction
50
0.01
0.1
1
Pulse Train Duration(s)
Fig. 9 - Maximum Non-Repetitive Surge Current
Revision: 22-May-2019
Document Number: 94870
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
300
a
elt
-D
R
120˚
(Rect)
150
W
K/
200
1
0.
0.
2
K/
W
0.3
K/
0.4 W
K/W
0.5
K/W
Tj = 150˚C
=
Maximum Total Power Loss (W)
A
hS
Rt
70MT...P
250
1K
/W
100
50
0
0
20
40
Total Output Current (A)
60
0
80
30
60
90
120
150
Maximum Allowable Ambient Temperature (°C)
Peak Half Sine Wave On-state Current (A)
Maximum Allowable Case Temperature (°C)
Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink)
140
100MT...P
R thJC (DC) = 0.19 K/W
120
Per Module
100
80
120˚
(Rect)
60
40
40 50 60 70 80 90 100 110 120 130
100MT...P
100
10
Tj = 150˚C
Tj = 25˚C
1
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 12 - On-State Voltage Drop Characteristics
Initial Tj = 125˚C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
350
300
250
200
100MT...P
Per Junction
150
100
1
10
100
Fig. 13 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave On-state Current (A)
Instantaneous On-state Current (A)
1000
At any rated load condition and with
rated Vrrm applied following surge.
Number Of Equal Amplitude Half Cycle
Current Pulses (N)
Total Output Current (A)
Fig. 11 - Current Rating Characteristics
400
500
Maximum non repetitive surge current
vs. pulse train duration. Control
of conduction may not be maintained.
Initial Tj = 125 ˚C
No voltage reapplied
Rated Vrrm reapplied
450
400
350
300
250
200
150
100
50
100MT...P
Per Junction
0
0.01
0.1
1
10
Pulse Train Duration(s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Revision: 22-May-2019
Document Number: 94870
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
Maximum Total Power Loss (W)
500
Rt
hS
0.0 A =
5K 0
.0
0.1 /W 25
K/
K/
W
W
100MT...P
Tj = 150˚C
400
300
120˚
(Rect)
200
0.2
K/W
0.3
K/W
-D
elt
a
R
0.5
K/W
1 K/W
100
0
0
20
40
60
80
Total Output Current (A)
0
30
60
90
120
150
100
Maximum Allowable Ambient Temperature (°C)
Transient Thermal Impedance Z thJC (K/W)
Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink)
10
Steady State Value
RthJC per junction =
1.6 K/W (40MT...P)
1
1.38 K/W (70MT...P
1.14 K/W (100MT...P)
40MT...P
70MT...P
100MT...P
DC Operation)
0.1
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 16 - Thermal Impedance ZthJC Characteristics
Revision: 22-May-2019
Document Number: 94870
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40MT160P-P, VS-70MT160P-P, VS-100MT160P-P
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
0
MT
160
1
2
3
4
5
P
-P
6
1
-
Vishay Semiconductors product
2
-
Current rating code
3
-
Circuit configuration code: 0 = Three Phase Bridge
4
-
Package indicator
5
-
Voltage code x 10 = VRRM (see Voltage Ratings table)
6
-
Pinout code (PressFit pins)
4 = 45 A
7 = 75 A
10 = 100 A
CIRCUIT CONFIGURATION
MTP PressFit
Three Phase Bridge
D1
D3
D5
D2
D4
D6
A1
B1
C1
A7
A6
E7
F7
L7
M7
I1
L1
M1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95595
Revision: 22-May-2019
Document Number: 94870
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
MTP Three Phase PressFit
20 ±0,2
2,5
13,5 ±0,2
17 ±0,35
3 ±0,15
DIMENSIONS in millimeters
45 ±0,3
39,5 ±0,2
x8
22,8 ±0,15
27,5 ±0,2
31,8 ±0,2
33,2 ±0,3
1
7,6 ±0,15
2,
1,3
,6
R2
6
X
45
°
3 ±0,15
12 ±0,15
30 ±0,15
0,4
Typical Pin position
Revision: 18-Mar-14
48,7 ±0,3
63,5 ±0,3
Document Number: 95595
1
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 01-Jan-2023
1
Document Number: 91000