54-94-104MT..KPbF Series
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Three Phase AC Switch (Power Modules),
50 A to 100 A
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Outstanding number of power encapsulated components
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
• Designed and qualified for industrial level
MTK
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION
IO
50 A to 100 A
VRRM
800 V to 1600 V
Package
MT-K
Circuit
Three phase AC switch
A range of extremely compact, encapsulated three phase
AC switches offering efficient and reliable operation. They
are intended for use in general purpose and heavy duty
applications as control motor starter.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IO
IFSM
I2t
CHARACTERISTICS
54MT.K
94MT.K
104MT.K
UNITS
50
90
100
A
TC
80
80
80
°C
50 Hz
390
950
1130
60 Hz
410
1000
1180
50 Hz
770
4525
6380
60 Hz
700
4130
5830
7700
45250
63800
A
I2t
A2s
A2s
VRRM
Range
800 to 1600
V
TStg
Range
-40 to 125
°C
TJ
Range
-40 to 125
°C
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ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
54MT..K
94/104MT..K
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM REPETITIVE
PEAK OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
80
800
900
800
100
1000
1100
1000
120
1200
1300
1200
140
1400
1500
1400
160
1600
1700
1600
80
800
900
800
100
1000
1100
1000
120
1200
1300
1200
140
1400
1500
1400
160
1600
1700
1600
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
20 (1)
40 (1)
Note
(1) For single AC switch
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum IRMS output current
at case temperature
IO
TEST CONDITIONS
For all conduction angle
ITSM
Maximum
for fusing
I2t
A
°C
80
80
No voltage
reapplied
1130
410
1000
1180
100 % VRRM
reapplied
330
800
950
345
840
1000
770
4525
6380
700
4130
5830
540
3200
4510
500
2920
4120
t = 0.1 to 10 ms, no voltage reapplied
7700
45 250
63 800
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
UNITS
100
950
t = 10 ms
I2t
104MT.K
90
80
t = 8.3 ms
Maximum I2t for fusing
94MT.K
50
390
t = 10 ms
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
54MT.K
No voltage
reapplied
Initial TJ = TJ
maximum
100 % VRRM
reapplied
Low level value of
threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
1.16
0.99
0.99
High level value of
threshold voltage
VT(TO)2
(I > x IT(AV)), TJ maximum
1.44
1.19
1.15
A
A2s
A2s
V
Low level value on-state
slope resistance
rt1
16.7 % x x IT(AV) < I < x IT(AV)), TJ maximum
12.54
4.16
3.90
High level value on-state
slope resistance
rt2
(I > x IT(AV)), TJ maximum
11.00
3.56
3.48
Maximum on-state
voltage drop
VTM
Ipk = 150 A, TJ = 25 °C
tp = 400 μs single junction
2.68
1.55
1.53
Maximum non-repetitve rate
of rise of turned on current
dI/dt
TJ = 25 °C, from 0.67 VDRM, ITM = x IT(AV),
Ig = 500 mA, tr < 0.5 μs, tp > 6 μs
150
m
Maximum holding current
IH
TJ = 25 °C, anode supply = 6 V,
resistive load, grate open circuit
200
Maximum latching current
IL
TJ = 25 °C, anode supply = 6 V, resistive load
400
V
A/μs
mA
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BLOCKING
PARAMETER
SYMBOL
RMS isolation voltage
VINS
Maximum critical rate of rise of
off-state voltage
dV/dt (1)
TEST CONDITIONS
54MT.K
94MT.K
104MT.K
UNITS
TJ = 25 °C all terminal shorted
f = 50 Hz, t = 1 s
4000
V
TJ = TJ maximum, linear to 0.67 VDRM,
gate open circuit
500
V/μs
Note
(1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 104MT160KBS90
TRIGGERING
PARAMETER
SYMBOL
54MT.K
94MT.K
PGM
10
PG(AV)
2.5
Maximum peak gate power
Maximum average gate power
TEST CONDITIONS
Maximum peak gate current
TJ = TJ maximum
IGM
Maximum peak negative
gate voltage
VGT
TJ = 40 °C
4.0
TJ = 25 °C
2.5
TJ = 125 °C
IGT
Maximum gate voltage
that will not trigger
VGD
Maximum gate current
that will not trigger
IGD
A
10
TJ = -40 °C
Maximum required DC gate
current to trigger
UNITS
W
2.5
- VGT
Maximum required DC gate
voltage to trigger
104MT.K
V
1.7
Anode supply = 6 V, resistive
load
270
TJ = 25 °C
150
TJ = 125 °C
80
mA
0.25
V
6
mA
TJ = TJ maximum, rated VDRM applied
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
and storage temperature range
54MT.K
TJ, TStg
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting
torque ± 100 %
TEST CONDITIONS
RthJC
RthCS
to heatsink
Approximate weight
104MT.K
-40 to 125
0.52
0.39
0.34
DC operation per junction
1.05
0.77
0.69
180 °C sine cond. angle per single AC switch
0.56
0.40
0.36
180 °C sine cond. angle per junction
1.12
0.80
0.72
Per module
Mounting surface smooth, flat and grased
UNITS
°C
DC operation per single AC switch
K/W
0.03
4 to 6
A mounting compound is recommended and
the torque should be rechecked after a
period of 3 hours to allow for the spread of
the
compound. Lubricated threads.
to terminal
94MT.K
Nm
3 to 4
225
g
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
DEVICES
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
54MT.K
0.072
0.085
0.108
0.152
0.233
0.055
0.091
0.117
0.157
0.236
94MT.K
0.033
0.039
0.051
0.069
0.099
0.027
0.044
0.055
0.071
0.100
104MT.K
0.027
0.033
0.042
0.057
0.081
0.023
0.037
0.046
0.059
0.082
K/W
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
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Instantaneous On-State Current (A)
Maximum Allowable Case
Temperature (°C)
130
54MT..K Series
Device fully turned-on
120
110
100
90
Per single AC switch
80
IRMS
~
70
For all conduction angles
60
0
10
20
30
40
50
1000
TJ = 25 °C
TJ = 125 °C
100
10
54MT..K Series
Per junction
1
0
60
1
3
5
4
6
Instantaneous On-State Voltage (V)
RMS Output Current (A)
Fig. 1 - Current Ratings Characteristic
Fig. 2 - Forward Voltage Drop Characteristics
W
200
R
50
K/
-Δ
Conduction angle
100
0.3
W
W
150
W
K/
K/
Ø
250
K/
05
200
1
0.2
0.
Ø
0.
300
=
250
180°
120°
90°
60°
30°
SA
300
R th
54MT..K Series
TJ = 125 °C
Device fully
turned-on
Maximum Total Power Loss (W)
(Per Total Module)
350
350
Maximum Total Power Loss (W)
(Per Total Module)
2
0.5
K/W
0.7 K
/W
1.0 K
/W
150
100
2.0 K/W
50
0
0
0
10
20
30
40
50
0
60
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
RMS Output Current (A)
Fig. 3 - Total Power Loss Characteristics
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
325
300
275
250
225
200
400
Peak Half Sine Wave
On-State Current (A)
350
350
300
250
200
54MT..K Series
Per junction
54MT..K Series
Per junction
175
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125° C
No voltage reapplied
Rated VRRM reapplied
150
150
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
0.01
0.1
1
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
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Instantaneous On-State Current (A)
Maximum Allowable Case
Temperature (°C)
130
94MT..K Series
Device fully turned-on
120
110
100
90
Per single AC switch
IRMS
~
80
70
60
For all conduction angles
50
0
20
40
60
80
100
1000
100
TJ = 25 °C
10
TJ = 125 °C
94MT..K Series
Per junction
1
0
120
1
4
3
5
Instantaneous On-State Voltage (V)
RMS Output Current (A)
Fig. 6 - Current Ratings Characteristic
Fig. 7 - Forward Voltage Drop Characteristics
450
K/
300
100
50
1.5 K/W
150
R
K/W
0.5
K/W
0.7 K
/W
1.0 K
/W
200
-Δ
0.3
250
W
50
03
100
0.
Conduction angle
150
W
=
200
K/
W
Ø
15
SA
Ø
250
0.
K/
300
400
350
05
350
180°
120°
90°
60°
30°
R th
400
0.
94MT..K Series
TJ = 125 °C
Device fully
turned-on
Maximum Total Power Loss (W)
(Per Total Module)
450
Maximum Total Power Loss (W)
(Per Total Module)
2
0
0
0
10
20
30
40
50
60
70
80
0
90 100
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
RMS Output Current (A)
Fig. 8 - Total Power Loss Characteristics
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
700
650
600
550
500
450
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
900
800
700
600
500
400
94MT..K Series
Per junction
400
1000
Peak Half Sine Wave
On-State Current (A)
750
94MT..K Series
Per junction
300
350
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
0.01
0.1
1
Pulse Train Duration (s)
Fig. 10 - Maximum Non-Repetitive Surge Current
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Instantaneous On-State Current (A)
Maximum Allowable Case
Temperature (°C)
130
104MT..K Series
Device fully turned-on
120
110
100
90
Per single AC switch
IRMS
~
80
70
For all conduction angles
60
0
20
40
60
80
100
1000
100
TJ = 25 °C
TJ = 125 °C
10
104MT..K Series
Per junction
1
0
120
1
3
4
5
Fig. 12 - Forward Voltage Drop Characteristics
Fig. 11 - Current Ratings Characteristic
500
W
K/
300
K/W
R
0.3
250
-Δ
50
W
03
100
K/
0.
Conduction angle
150
=
200
15
SA
Ø
Ø
250
0.
W
300
400
350
K/
350
450
05
400
180°
120°
90°
60°
30°
R th
450
0.
104MT..K Series
TJ = 125 °C
Device fully
turned-on
Maximum Total Power Loss (W)
(Per Total Module)
500
Maximum Total Power Loss (W)
(Per Total Module)
2
Instantaneous On-State Voltage (V)
RMS Output Current (A)
0.5
200
100
K/W
0.7 K
/W
1.0 K
/W
50
1.5 K/W
150
0
0
0
20
40
60
80
100
0
120
25
50
75
100
125
Maximum Allowable Ambient
Temperature (°C)
RMS Output Current (A)
Fig. 13 - Total Power Loss Characteristics
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Peak Half Sine Wave
On-State Current (A)
1000
900
800
700
600
500
104MT..K Series
Per junction
1200
Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
1100
Peak Half Sine Wave
On-State Current (A)
1100
1000
900
800
700
600
500
104MT..K Series
Per junction
400
400
1
10
100
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
0.01
0.1
1
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
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10
ZthJC - Transient Thermal
Impedance (°C/W)
Steady state value
RthJC = 1.05 K/W
54MT..K Series
RthJC = 0.77 K/W
1
94MT..K Series
RthJC = 0.69 K/W
(DC operation)
104MT..K Series
0.1
0.01
Per junction
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 16 - Thermal Impedance ZthJC Characteristics
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω
tr = 0.5 µs, tp ≥ 6 µs
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 µs, tp ≥ 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(a)
TJ = 25 °C
1
TJ = -40 °C
(b)
TJ = 125 °C
Instantaneous Gate Voltage (V)
100
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
Frequency limited by PG(AV)
54/ 94/ 104MT..K Series
0.01
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
10
4
MT
160
1
2
3
4
K
PbF
5
1
-
Current rating code: 5 = 50 A (average)
9 = 90 A (average)
10 = 100 A (average)
2
-
AC switch
3
4
-
Essential part number
Voltage code x 10 = VRRM (see Voltage Ratings table)
5
-
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
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CIRCUIT CONFIGURATION
A
B
C
1
3
5
2
4
6
D
E
F
LINKS TO RELATED DOCUMENTS
Dimensions
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Outline Dimensions
Vishay Semiconductors
MTK (with and without optional barrier)
DIMENSIONS WITH OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
24 ± 0.5
(0.94 ± 0.02)
38 ± 0.5
(1.5 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
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Outline Dimensions
MTK (with and without optional barrier)
Vishay Semiconductors
DIMENSIONS WITHOUT OPTIONAL BARRIERS in millimeters (inches)
Fast-on tab 2.8 x 0.8 (type 110)
24 ± 0.5
(0.94 ± 0.02)
8.5 ± 0.5
(0.34 ± 0.02)
30 ± 0.5
(1.17 ± 0.02)
25.5 ± 0.5
(1.004 ± 0.02)
28 ± 1
(1.11 ± 0.04)
Screws M5 x 0.8 length 10
35 ± 0.3
(1.38 ± 0.01)
75 ± 0.5
(2.95 ± 0.02)
A
2
3
4
B
C
5
6
7
8
Ø 6.5 ± 0.2
(Ø 0.26 ± 0.01)
14 ± 0.3
(0.55 ± 0.01)
1
D
18 ± 0.3
(0.71 ± 0.01)
5 ± 0.3
(0.2 ± 0.01)
F
E
46 ± 0.3
(1.81 ± 0.01)
80 ± 0.3
(3.15 ± 0.01)
94 ± 0.3
(3.7 ± 0.01)
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
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Document Number: 91000
