VS-10BQ030-M3/5BT

VS-10BQ030-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Small foot print, surface mountable • Very low forward voltage drop Cathode Anode • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS IF(AV) 1.0 A VR 30 V VF at IF 0.420 V IRM max. 15 mA at 125 °C TJ max. 150 °C EAS 3.0 mJ Package SMB (DO-214AA) Circuit configuration Single The VS-10BQ030-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 1.0 A Rectangular waveform VRRM IFSM tp = 5 ms sine VF 1.0 Apk, TJ = 125 °C TJ Range 30 V 430 A 0.30 V -55 to +150 °C VS-10BQ030-M3 UNITS 30 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) 50 % duty cycle at TL = 106 °C, rectangular waveform 1.0 Maximum peak one cycle non-repetitive surge current See fig. 6 5 μs sine or 3 μs rect. pulse 430 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 6 mH 3.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied UNITS A 90 Revision: 29-Jul-2021 Document Number: 95738 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ030-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop VFM (1) TJ = 25 °C 2A 1A TJ = 125 °C 2A TJ = 25 °C Maximum reverse leakage current IRM (1) VALUES UNITS 0.420 0.470 V 0.300 0.370 0.5 TJ = 100 °C VR = Rated VR mA 5.0 TJ = 125 °C 15 Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 200 pF Typical series inductance LS Measured lead to lead 5 mm from package body 2.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TJ (1), TEST CONDITIONS TStg Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA DC operation °C/W 80 Approximate weight Marking device 25 Case style SMB (DO-214AA) 0.10 g 0.003 oz. 1E Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 29-Jul-2021 Document Number: 95738 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ030-M3 Vishay Semiconductors 10 Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C TJ = 25 °C 1 0.1 130 Square wave (D = 0.50) 80 % rated VR applied 120 DC D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 110 100 See note (1) 90 0 0.2 0.4 0.6 0.8 0 1.2 1.6 IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 0.5 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average Power Loss (W) TJ = 125 °C IR - Reverse Current (mA) 0.8 VFM - Forward Voltage Drop (V) 10 TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 0.4 0.3 DC 0.2 RMS limit 0.1 0 0.0001 0 10 20 0 30 0.4 0.8 1.6 1.2 IF(AV) - Average Forward Current (A) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current TJ = 25 °C 100 10 0 10 20 30 IFSM - Non-Repetitive Surge Current (A) VR - Reverse Voltage (V) 1000 CT - Junction Capacitance (pF) 0.4 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 VR - Reverse Voltage (V) tp - Square Wave Pulse Duration (µs) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Jul-2021 Document Number: 95738 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ030-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 B Q 030 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating 3 - B = single lead diode 4 - Q = Schottky “Q” series 5 - Voltage rating (030 = 30 V) 6 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13" diameter plastic tape and reel VS-10BQ030-M3/5BT LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 29-Jul-2021 Document Number: 95738 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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