VS-10BQ100-M3/5BT

VS-10BQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1A VR 100 V VF at IF 0.59 V IRM 1 mA at 125 °C TJ max. 175 °C DESCRIPTION EAS 1.0 mJ Package SMB (DO-214AA) Circuit configuration Single The VS-10BQ100-M3 surface-mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 1.0 Apk, TJ = 125 °C TJ Range VALUES UNITS 1 A 100 V 780 A 0.59 V -55 to +175 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-10BQ100-M3 UNITS 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL TEST CONDITIONS VALUES UNITS IF(AV) 50 % duty cycle at TL = 143 °C, rectangular waveform 1.0 A 5 μs sine or 3 μs rect. pulse 780 Following any rated load condition and with rated VRRM applied Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse 38 A Revision: 23-Apr-2019 Document Number: 93227 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop See fig. 1 SYMBOL VFM (1) TEST CONDITIONS VALUES 1A 0.75 TJ = 25 °C 2A 1A TJ = 125 °C 2A TJ = 25 °C UNITS 0.82 V 0.59 0.65 0.5 Maximum reverse leakage current See fig. 2 IRM Typical junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 65 pF Typical series inductance LS Measured lead to lead 5 mm from package body 2.0 nH Rated VR 10 000 Maximum voltage rate of charge dV/dt VR = Rated VR TJ = 125 °C mA 1 V/μs Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and  storage temperature range TJ (1), TStg Maximum thermal resistance,  junction to lead RthJL (2) Maximum thermal resistance,  junction to ambient RthJA TEST CONDITIONS DC operation UNITS - 55 to 175 °C 36 °C/W 80 Approximate weight Marking device VALUES Case style SMB (DO-214AA) 0.10 g 0.003 oz. 1J Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 23-Apr-2019 Document Number: 93227 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ100-M3 Vishay Semiconductors 10 10 175 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 1 TJ = 125 °C TJ = 25 °C 150 °C 1 125 °C 0.1 100 °C 75 °C 0.01 50 °C 0.001 25 °C 0.0001 0.00001 0.1 0.2 0.4 0.6 0.8 1.0 0 1.2 20 40 60 80 100 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 0 20 40 80 60 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 1 00 10 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 1 Notes: 1. Duty factor D = t1/ t2 Single pulse (thermal resistance) . 2. Peak TJ = Pdm x ZthJC + Tc 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 23-Apr-2019 Document Number: 93227 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ100-M3 Vishay Semiconductors 0.8 180 170 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 160 150 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 140 130 Square wave (D = 0.50) 80 % rated VR applied 120 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.6 RMS limit 0.4 DC 0.2 see note (1) 0 110 0.0 0.3 0.6 0.9 1.2 0 1.5 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 23-Apr-2019 Document Number: 93227 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ100-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 B Q 100 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating 3 - B = SMB 4 - Q = Schottky “Q” series 5 - Voltage rating (100 = 100 V) 6 - Environmental digit: -M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-10BQ100-M3/5BT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96603 Revision: 23-Apr-2019 Document Number: 93227 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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