VS-10BQ100-M3
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Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
SMB (DO-214AA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
1A
VR
100 V
VF at IF
0.59 V
IRM
1 mA at 125 °C
TJ max.
175 °C
DESCRIPTION
EAS
1.0 mJ
Package
SMB (DO-214AA)
Circuit configuration
Single
The VS-10BQ100-M3 surface-mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
1.0 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
1
A
100
V
780
A
0.59
V
-55 to +175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
VRWM
VS-10BQ100-M3
UNITS
100
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
SYMBOL
TEST CONDITIONS
VALUES
UNITS
IF(AV)
50 % duty cycle at TL = 143 °C, rectangular waveform
1.0
A
5 μs sine or 3 μs rect. pulse
780
Following any rated
load condition and with
rated VRRM applied
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
1.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
38
A
Revision: 23-Apr-2019
Document Number: 93227
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
SYMBOL
VFM (1)
TEST CONDITIONS
VALUES
1A
0.75
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
UNITS
0.82
V
0.59
0.65
0.5
Maximum reverse leakage current
See fig. 2
IRM
Typical junction capacitance
CT
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
65
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
Rated VR
10 000
Maximum voltage rate of charge
dV/dt
VR = Rated VR
TJ = 125 °C
mA
1
V/μs
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
UNITS
- 55 to 175
°C
36
°C/W
80
Approximate weight
Marking device
VALUES
Case style SMB (DO-214AA)
0.10
g
0.003
oz.
1J
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 23-Apr-2019
Document Number: 93227
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
Vishay Semiconductors
10
10
175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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TJ = 175 °C
1
TJ = 125 °C
TJ = 25 °C
150 °C
1
125 °C
0.1
100 °C
75 °C
0.01
50 °C
0.001
25 °C
0.0001
0.00001
0.1
0.2
0.4
0.6
0.8
1.0
0
1.2
20
40
60
80
100
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
20
40
80
60
100
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
1 00
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
1
Notes:
1. Duty factor D = t1/ t2
Single pulse
(thermal resistance)
.
2. Peak TJ = Pdm x ZthJC + Tc
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 23-Apr-2019
Document Number: 93227
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
Vishay Semiconductors
0.8
180
170
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
160
150
Average Power Loss (W)
Allowable Case Temperature (°C)
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DC
140
130
Square wave (D = 0.50)
80 % rated VR applied
120
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.6
RMS limit
0.4
DC
0.2
see note (1)
0
110
0.0
0.3
0.6
0.9
1.2
0
1.5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 23-Apr-2019
Document Number: 93227
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100-M3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
B
Q
100
-M3
1
2
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMB
4
-
Q = Schottky “Q” series
5
-
Voltage rating (100 = 100 V)
6
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10BQ100-M3/5BT
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5BT
3200
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95401
Part marking information
www.vishay.com/doc?95403
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?96603
Revision: 23-Apr-2019
Document Number: 93227
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2019
1
Document Number: 91000