VS-10BQ100PbF
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Vishay Semiconductors
High Performance Schottky Rectifier, 1 A
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
Cathode
Anode
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
Package
SMB
IF(AV)
1.0 A
• Designed and qualified for industrial level
VR
100 V
DESCRIPTION
VF at IF
0.78 V
IRM
1 mA at 125 °C
The VS-10BQ100PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
TJ max.
175 °C
Diode variation
Single die
EAS
1.0 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
VALUES
UNITS
Rectangular waveform
1.0
A
100
V
IFSM
tp = 5 μs sine
780
A
VF
1.0 Apk, TJ = 125 °C
TJ
Range
IF(AV)
CHARACTERISTICS
VRRM
0.62
V
-55 to +175
°C
VS-10BQ100PbF
UNITS
100
V
VOLTAGE RATINGS
PARAMETER
SYMBOL
Maximum DC reverse voltage
VR
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TL = 152 °C, rectangular waveform
1.0
A
Maximum peak one cycle
non-repetitive surge current
5 μs sine or 3 μs rect. pulse
780
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 0.5 A, L = 8 mH
1.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
A
38
Revision: 20-May-14
Document Number: 94114
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
1A
IRM (1)
Typical junction capacitance
CT
Typical series inductance
LS
Maximum voltage rate of charge
dV/dt
0.89
0.72
0.5
VR = Rated VR
TJ = 125 °C
V
0.62
TJ = 125 °C
TJ = 25 °C
UNITS
0.78
TJ = 25 °C
2A
2A
Maximum reverse leakage current
See fig. 2
VALUES
mA
1
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
42
Measured lead to lead 5 mm from package body
pF
2.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +175
°C
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and
storage temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
36
°C/W
80
Approximate weight
Marking device
0.10
g
0.003
oz.
Case style SMB (similar DO-214AA)
V1J
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
10
TJ = 175 °C
IR - Reverse Current (mA)
IF - Instantaneous Forward
Current (A)
10
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.2
1
TJ = 150 °C
TJ = 125 °C
0.1
TJ = 100 °C
0.01
TJ = 75 °C
0.001
TJ = 50 °C
0.0001
TJ = 25 °C
0.00001
0.4
0.6
0.8
1.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
20
40
60
80
100
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Revision: 20-May-14
Document Number: 94114
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100PbF
www.vishay.com
Vishay Semiconductors
CT - Junction Capacitance (pF)
100
TJ = 25 °C
10
0
20
40
100
80
60
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
ZthJC - Thermal Impedance (°C/W)
100
10
PDM
1
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
t1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.001
0.01
t2
Notes:
1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
1.0
170
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
160
Average Power Loss (W)
Allowable Lead Temperature (°C)
180
150
140
Square wave (D = 0.50)
Rated VR applied
130
120
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0.8
0.6
RMS limit
0.4
DC
0.2
See note (1)
0
110
0
0.4
0.8
1.2
1.6
0
0.3
0.6
0.9
1.2
1.5
IF(AV) - Average Forward Current (A)
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Revision: 20-May-14
Document Number: 94114
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ100PbF
IFSM - Non-Repetitive Surge Current (A)
www.vishay.com
Vishay Semiconductors
1000
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
10 000
1000
100
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
ORDERING INFORMATION TABLE
Device code
VS-
10
B
Q
100
TR
PbF
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = single lead diode
4
-
Q = Schottky “Q” series
5
-
Voltage rating (100 = 100 V)
6
-
None = box (1000 pieces)
7
-
TR = tape and reel (3000 pieces)
PbF = lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95017
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95029
Tape and reel
www.vishay.com/doc?95034
Bulk
www.vishay.com/doc?95397
www.vishay.com/doc?95276
Revision: 20-May-14
Document Number: 94114
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay High Power Products
SMB
DIMENSIONS in millimeters (inches)
2.15 (0.085)
1.80 (0.071)
3.80 (0.150)
3.30 (0.130)
1
2
1 Polarity
4.70 (0.185)
4.10 (0.161)
2.5 TYP.
(0.098 TYP.)
2 Part Number
Soldering pad
2.40 (0.094)
1.90 (0.075)
1.30 (0.051)
0.76 (0.030)
5.60 (0.220)
5.00 (0.197)
0.30 (0.012)
0.15 (0.006)
2.0 TYP.
(0.079 TYP.)
4.2 (0.165)
4.0 (0.157)
Document Number: 95017
Revision: 25-Jun-07
For technical questions concerning discrete products, contact: diodes-tech@vishay.com
For technical questions concerning module products, contact: ind-modules@vishay.com
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1
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000