VS-10CSH01-M3/86A

VS-10CSH01-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt® FEATURES eSMP® Series K K Anode 1 Cathode Anode 2 1 2 SMPC (TO-277A) LINKS TO ADDITIONAL RESOURCES • Hyperfast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • Specified for output and snubber operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS 3D 3D State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 100 V VF at IF 0.75 V These devices are intended for use in snubber, boost, as high frequency rectifiers and freewheeling diodes. Package SMPC (TO-277A) The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. Circuit configuration Common cathode MECHANICAL DATA trr (typ.) 25 ns TJ max. 175 °C Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current TEST CONDITIONS VALUES UNITS 100 V VRRM per device per diode per device per diode Operating junction and storage temperatures IF(AV) IFSM 10 TSp = 155 °C 5 TJ = 25 °C TJ, TStg A 130 70 -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR,VR Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 5 A - 0.92 0.98 IF = 5 A, TJ = 150 °C - 0.75 0.82 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - 4 80 VR = 100 V - 18 - IR = 100 μA UNITS V μA pF Revision: 13-Jan-2021 Document Number: 94994 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V - 25 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 18 - - 28 - - 2 - - 3.8 - TJ = 125 °C Peak recovery current TJ = 25 °C IRRM TJ = 125 °C IF = 5 A dIF/dt = 200 A/μs VR = 160 V UNITS ns A TJ = 25 °C - 18 - TJ = 125 °C - 53 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance, junction to mount, per leg RthJM - 2.5 3.5 °C/W Thermal resistance, junction to ambient, per leg RthJA - 80 - °C/W Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS 0.1 Approximate weight 0.0035 Marking device Case style SMPC (TO-277A) 100 oz. SCH1 100 175 °C IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) g TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = -40 °C 0.1 10 150 °C 1 125 °C 0.1 0.01 25 °C 0.001 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 94994 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01-M3 www.vishay.com Vishay Semiconductors 6 100 Average Power Loss (W) CT - Junction Capacitance (pF) RMS limit 5 4 2 1 0 10 0 25 50 75 0 100 1 2 3 4 5 6 7 8 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 40 180 35 175 30 DC 170 25 trr (ns) Allowable Case Temperature (°C) D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 3 165 125 °C 20 Square wave (D = 0.50) 80 % rated VR applied 25 °C 15 160 10 IF = 5 A See note (1) 155 5 0 1 2 3 4 5 100 6 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 90 IF = 5 A 125 °C Qrr (nC) 70 50 25 °C 30 10 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 13-Jan-2021 Document Number: 94994 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01-M3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 10 Typical, junction to case Steady state value 1 Single pulse 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 8 - Typical Transient Thermal Impedance, Junction to Case ZthJA - Thermal Impedance (°C/W) 100 Steady state value Typical, junction to ambient 10 1 Single pulse 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 9 - Typical Transient Thermal Impedance, Junction to Ambient (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 13-Jan-2021 Document Number: 94994 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 C S H 01 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: C = common cathode 4 - S = SMPC package 5 - Process type, H = hyper fast recovery 6 - Voltage code (01 = 100 V) 7 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10CSH01-M3/86A 1500 1500 7" diameter plastic tape and reel VS-10CSH01-M3/87A 6500 6500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95570 Part marking information www.vishay.com/doc?95565 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96095 Revision: 13-Jan-2021 Document Number: 94994 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMPC (TO-277A) DIMENSIONS in inches (millimeters) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 16-Feb-2022 Document Number: 95570 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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