VS-10CSH01HM3/87A

VS-10CSH01HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt® FEATURES eSMP® Series • Hyperfast recovery time, reduced Qrr, and soft recovery K K Anode 1 • 175 °C maximum temperature Cathode Anode 2 • Specified for output and snubber operation 1 operating junction • Low forward voltage drop 2 • Low leakage current SMPC (TO-277A) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified, meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models DESCRIPTION / APPLICATIONS State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyper fast recovery time. PRIMARY CHARACTERISTICS IF(AV) 2x5A VR 100 V VF at IF 0.75 V trr (typ.) 25 ns TJ max. 175 °C The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. Package SMPC (TO-277A) Circuit configuration Common cathode These devices are intended for use in snubber, boost, lighting, piezo-injection, as high frequency rectifiers, and freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current TEST CONDITIONS VRRM per device per diode per device per diode Operating junction and storage temperatures IF(AV) TSp = 155 °C IFSM TJ = 25 °C TJ, TStg VALUES UNITS 100 V 10 5 130 A 70 -55 to +175 °C Revision: 13-Jan-2021 Document Number: 94995 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Breakdown voltage, blocking voltage VBR, VR Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 100 - - IF = 5 A - 0.92 0.98 IF = 5 A, TJ = 150 °C - 0.75 0.82 IR = 100 μA UNITS V VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - 4 80 VR = 100 V - 18 - pF MIN. TYP. MAX. UNITS μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 25 - IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 25 TJ = 25 °C - 18 - TJ = 125 °C ns - 28 - - 2 - - 3.8 - TJ = 25 °C - 18 - TJ = 125 °C - 53 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance, junction to mount, per leg RthJM - 2.5 3.5 °C/W Thermal resistance, junction to ambient, per leg RthJA - 80 - °C/W Peak recovery current IRRM Reverse recovery charge IF = 5 A dIF/dt = 200 A/μs VR = 160 V TJ = 25 °C TJ = 125 °C Qrr A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS Approximate weight Case style SMPC (TO-277A) g oz. SCH1 100 100 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 0.1 0.0035 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 TJ = -40 °C 10 150 °C 1 125 °C 0.1 0.01 25 °C 0.001 0.0001 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 25 50 75 100 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 13-Jan-2021 Document Number: 94995 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01HM3 www.vishay.com Vishay Semiconductors 100 6 Average Power Loss (W) CT - Junction Capacitance (pF) RMS limit 5 4 2 1 10 0 0 25 50 75 100 0 1 2 3 4 5 6 7 8 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 40 35 175 30 DC 170 25 trr (ns) Allowable Case Temperature (°C) D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 3 165 125 °C 20 Square wave (D = 0.50) 80 % rated VR applied 25 °C 15 160 10 IF = 5 A See note (1) 155 5 0 1 2 3 4 5 6 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 90 IF = 5 A 125 °C Qrr (nC) 70 50 25 °C 30 10 100 1000 dIF/dt (A/μs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 13-Jan-2021 Document Number: 94995 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01HM3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance (°C/W) 10 Typical, junction to case Steady state value 1 Single pulse 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 8 - Typical Transient Thermal Impedance, Junction to Case ZthJA - Thermal Impedance (°C/W) 100 Steady state value Typical, junction to ambient 10 1 Single pulse 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 9 - Typical Transient Thermal Impedance, Junction to Ambient (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 13-Jan-2021 Document Number: 94995 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10CSH01HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 C S H 01 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: C = common cathode 4 - S = SMPC package 5 - Process type, H = hyper fast recovery 6 - Voltage code (01 = 100 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-10CSH01HM3/86A 1500 1500 7" diameter plastic tape and reel VS-10CSH01HM3/87A 6500 6500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95570 Part marking information www.vishay.com/doc?95565 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96095 Revision: 13-Jan-2021 Document Number: 94995 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMPC (TO-277A) DIMENSIONS in inches (millimeters) 0.187 (4.75) 0.175 (4.45) 0.016 (0.40) 0.006 (0.15) K 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.047 (1.20) 0.039 (1.00) 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) Mounting Pad Layout 0.087 (2.20) 0.075 (1.90) 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.186 (4.72) MIN. 0.268 (6.80) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.049 (1.24) 0.037 (0.94) 0.050 (1.27) MIN. 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) 0.041 (1.04) 0.055 (1.40) MIN. Conform to JEDEC® TO-277A Revision: 16-Feb-2022 Document Number: 95570 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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