VS-10CWH02FN-M3
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Vishay Semiconductors
Hyperfast Rectifier, 2 x 5 A FRED Pt®
FEATURES
• Hyperfast recovery time
Base
common
cathode
2
• 175 °C max. operating junction temperature
• Output rectification freewheeling
• Low forward voltage drop reduced Qrr and soft
recovery
2
3
1
DPAK (TO-252AA)
2
1
3
Common
Anode
cathode
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
IF(AV)
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time, and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
2x5A
VR
200 V
VF at IF
0.74 V
trr (typ.)
23 ns
TJ max.
175 °C
Package
DPAK (TO-252AA)
Circuit configuration
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
200
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 160 °C
10
Non-repetitive peak surge current
IFSM
TJ = 25 °C
80
Operating junction and storage temperatures
TJ, TStg
A
-65 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current per leg
SYMBOL
VBR,
VR
VF
IR
TEST CONDITIONS
MIN.
TYP.
MAX.
200
-
-
IF = 5 A
-
0.90
0.98
IF = 10 A
-
0.98
1.15
IR = 100 μA
IF = 5 A, TJ = 150 °C
-
0.74
0.84
IF = 10 A, TJ = 150 °C
-
0.84
1.05
VR = VR rated
-
-
4
TJ = 125 °C, VR = VR rated
-
-
40
TJ = 150 °C, VR = VR rated
-
-
80
UNITS
V
μA
Junction capacitance per leg
CT
VR = 600 V
-
17
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8
-
nH
Revision: 11-Apr-18
Document Number: 93263
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
Qrr
TEST CONDITIONS
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V
-
23
27
TJ = 25 °C
-
21
-
TJ = 125 °C
-
26
-
IF = 5 A
dIF/dt = 200 A/μs
VR = 160 V
TJ = 25 °C
TJ = 125 °C
-
2
-
-
3.1
-
UNITS
ns
A
TJ = 25 °C
-
20
-
TJ = 125 °C
-
41
-
MIN.
TYP.
MAX.
UNITS
-65
-
175
°C
-
2.7
3.2
-
1.35
1.6
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage temperature range
per leg
Thermal resistance, junction to case
TEST CONDITIONS
TJ, TStg
RthJC
per device
Approximate weight
Case style DPAK (TO-252AA)
0.3
g
0.01
oz.
10CWH02FN
100
100
TJ = 175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
°C/W
TJ = 175 °C
10
1
TJ = 125 °C
TJ = 25 °C
0.1
10
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 75 °C
0.01
TJ = 50 °C
TJ = 25 °C
0.001
0.0001
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
50
2.0
100
150
200
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
50
100
150
200
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 11-Apr-18
Document Number: 93263
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ZthJC - Thermal Impedance (°C/W)
10
D = 0.5
D = 02
1
D = 0.1
D = 0.05
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.1
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
40
35
30
170
DC
25
trr (nC)
Allowable Case Temperature (°C)
180
160
Square wave (D = 0.50)
rated VR applied
150
20
15
5 A, TJ = 25 °C
10
5
see note (1)
0
140
0
1
2
3
4
5
6
7
8
100
IF(AV) - Average Forward Current (A)
1000
dIFdt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
6
70
5.5
RMS Limit
60
5
4.5
50
4
3.5
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
3
2.5
2
1.5
DC
1
Qrr (nC)
Average Power Loss (W)
5 A, TJ = 125 °C
5 A, TJ = 125 °C
40
30
20
5 A, TJ = 25 °C
10
0.5
0
0
1
2
3
4
5
6
7
8
0
100
1000
IF(AV) - Average Forward Current (A)
dIFdt (A/μs)
Fig. 6 - Forward Power Loss Characteristics
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR
Revision: 11-Apr-18
Document Number: 93263
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Vishay Semiconductors
VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
di(rec)M/dt (5)
0.75 IRRM
(1) diF/dt
(1) diF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) di(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 11-Apr-18
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ORDERING INFORMATION TABLE
Device code
VS-
10
C
W
H
02
FN
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
TRL -M3
8
9
C = common cathode
4
-
Package identifier:
5
-
H = hyperfast recovery
6
-
Voltage rating (02 = 200 V)
7
-
FN = TO-252AA
8
-
None = tube
W = D-PAK
TR = tape and reel
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
9
-
Environmental digit:
-M3 = halogen-free, RoHS-compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10CWH02FN-M3
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
75
3000
Antistatic plastic tube
VS-10CWH02FNTR-M3
2000
2000
13" diameter reel
VS-10CWH02FNTRL-M3
3000
3000
13" diameter reel
VS-10CWH02FNTRR-M3
3000
3000
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95627
Part marking information
www.vishay.com/doc?95176
Packaging information
www.vishay.com/doc?95033
SPICE model
www.vishay.com/doc?95376
Revision: 11-Apr-18
Document Number: 93263
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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D-PAK (TO-252AA) “M”
DIMENSIONS in millimeters and inches
(5)
A
E
b3
(3)
Pad layout
C
A
0.010 M C A B
c2
A
L3 (3)
Ø1
4
Ø2
4
B
Seating
plane
H
D (5)
1
2
0.245
MIN.
(6.23)
D1
L4
3
0.265
MIN.
(6.74)
E1
3
2
0.488 (12.40)
0.409 (10.40)
1
0.089
MIN.
(2.28)
Detail “C”
(2) L5
b
2x e
A
c
b2
0.06
MIN.
(1.524)
0.010 M C A B
0.093 (2.38)
0.085 (2.18)
(L1)
Detail “C”
Rotated 90 °CW
Scale: 20:1
H (7)
Lead tip
C
Gauge
plane
L2
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
C Seating
plane
C
Ø
L
NOTES
A1
SYMBOL
MILLIMETERS
MIN.
MAX.
MAX.
A
2.18
2.39
0.086
0.094
e
A1
-
0.13
-
0.005
H
9.40
10.41
0.370
0.410
b
0.64
0.89
0.025
0.035
L
1.40
1.78
0.055
0.070
b2
0.76
1.14
0.030
0.045
L1
b3
4.95
5.46
0.195
0.215
c
0.46
0.61
0.018
0.024
L3
0.89
1.27
0.035
0.050
c2
0.46
0.89
0.018
0.035
L4
-
1.02
-
0.040
D
5.97
6.22
0.235
0.245
5
L5
1.14
1.52
0.045
0.060
D1
5.21
-
0.205
-
3
Ø
0°
10°
0°
10°
E
6.35
6.73
0.250
0.265
5
Ø1
0°
15°
0°
15°
E1
4.32
-
0.170
-
3
Ø2
25°
35°
25°
35°
3
2.29 BSC
INCHES
MIN.
2.74 BSC
L2
0.51 BSC
NOTES
0.090 BSC
0.108 REF.
0.020 BSC
3
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension uncontrolled in L5
(3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad
(4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip
(5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(6) Dimension b1 and c1 applied to base metal only
(7) Datum A and B to be determined at datum plane H
(8) Outline conforms to JEDEC® outline TO-252AA
Revision: 24-Jun-16
Document Number: 95627
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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Revision: 01-Jan-2022
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Document Number: 91000
